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EMH2604-TL-H Equivalent & Substitute Parts
Part Overview
The EMH2604-TL-H is an N and P-Channel MOSFET array manufactured by onsemi, designed for surface mount applications requiring dual-channel switching capability at 20V with integrated logic-level gate control. This device integrates both N-channel (4A) and P-channel (3A) MOSFETs in a single 8-EMH package, delivering 1.2W maximum power dissipation.
The EMH2604-TL-H is classified as obsolete. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 20 | V |
| Current - Continuous Drain (Id) @ 25°C | 4A (N-Ch), 3A (P-Ch) | A |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4A, 4.5V | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 10V | pF |
| Power - Max | 1.2 | W |
| Operating Temperature (TJ) | 150 | °C |
| Configuration | N and P-Channel | — |
| FET Feature | Logic Level Gate | — |
| Mounting Type | Surface Mount | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the EMH2604-TL-H is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss): Must equal or exceed 20V
- Configuration: Must maintain N and P-Channel dual-channel architecture
- FET Feature: Must support Logic Level Gate operation
- Current Rating: N-Channel minimum 4A, P-Channel minimum 3A at 25°C
- Gate Charge (Qg): Lower values indicate faster switching with reduced driver stress
- Input Capacitance (Ciss): Lower values reduce gate drive power requirements
- Rds On: Lower on-resistance reduces conduction losses
Mechanical and Packaging Criteria:
- Mounting Type: Surface Mount required
- Moisture Sensitivity Level: MSL 1 or equivalent
- Technology: MOSFET (Metal Oxide) construction
The FDMA1032CZ meets these substitution criteria through equivalent voltage rating, dual N/P-channel configuration, logic-level gate control, and surface mount packaging. While the FDMA1032CZ operates at slightly reduced continuous drain current (3.7A N-Channel, 3.1A P-Channel) and lower maximum power (700mW versus 1.2W), it maintains functional compatibility for applications within these revised specifications.
Parameter Comparison
| Parameter | EMH2604-TL-H | FDMA1032CZ | Unit |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | — |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | — |
| Configuration | N and P-Channel | N and P-Channel | — |
| FET Feature | Logic Level Gate | Logic Level Gate | — |
| Drain to Source Voltage (Vdss) | 20 | 20 | V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3A | 3.7A, 3.1A | A |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4A, 4.5V | 68mOhm @ 3.7A, 4.5V | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V | 6nC @ 4.5V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 10V | 340pF @ 10V | pF |
| Power - Max | 1.2 | 0.7 | W |
| Operating Temperature (TJ) | 150 | -55 to 150 | °C |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package / Case | 8-SMD, Flat Lead | 6-VDFN Exposed Pad | — |
| Supplier Device Package | 8-EMH | 6-MicroFET (2x2) | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| Product Status | Obsolete | Active | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
Engineering Selection Recommendations
Product Status Consideration: The EMH2604-TL-H is classified as obsolete, while the FDMA1032CZ maintains active product status with onsemi. Active status ensures continued manufacturing support, documented availability, and technical support resources.
Compliance and Certification: Both the EMH2604-TL-H and FDMA1032CZ carry identical regulatory classifications: REACH Unaffected and ECCN EAR99. Both devices maintain MSL 1 (Unlimited) moisture sensitivity rating, indicating equivalent handling and storage requirements.
Electrical Performance Trade-offs: The FDMA1032CZ operates at reduced continuous drain current specifications (3.7A N-Channel versus 4A, 3.1A P-Channel versus 3A) and lower maximum power dissipation (700mW versus 1.2W). Applications requiring the full 4A N-Channel or 3A P-Channel current capacity of the EMH2604-TL-H must evaluate whether the FDMA1032CZ current ratings remain within acceptable operating margins.
Packaging Consideration: The EMH2604-TL-H uses an 8-EMH package (8-SMD, Flat Lead), while the FDMA1032CZ uses a 6-MicroFET (2x2) package (6-VDFN Exposed Pad). PCB layout modifications are required for package substitution. The FDMA1032CZ's smaller footprint may provide space advantages in constrained designs.
Series Technology: The FDMA1032CZ incorporates onsemi's PowerTrench® technology, representing a more recent design generation compared to the EMH2604-TL-H.
Frequently Asked Questions (FAQ)
Q: Can the FDMA1032CZ directly replace the EMH2604-TL-H without circuit modifications?
A: Direct pin-for-pin replacement is not possible due to different package types (8-EMH versus 6-MicroFET). PCB layout redesign is required. Additionally, the reduced current ratings (3.7A N-Channel, 3.1A P-Channel) must be verified against application requirements. Gate charge and input capacitance differences may require gate driver circuit evaluation.
Q: What are the key electrical differences between these devices?
A: The FDMA1032CZ operates at lower continuous drain current (3.7A N-Channel, 3.1A P-Channel versus 4A, 3A), reduced maximum power dissipation (700mW versus 1.2W), and slightly higher on-resistance (68mOhm versus 45mOhm at rated current). Gate charge is marginally higher (6nC versus 4.7nC). Input capacitance is nearly equivalent (340pF versus 345pF).
Q: Are there any supply chain advantages to using the FDMA1032CZ?
A: The FDMA1032CZ maintains active product status with significantly higher inventory availability (20,471 pieces in stock versus 798 pieces for the obsolete EMH2604-TL-H). Active status ensures continued manufacturing support and long-term availability.
Q: What package considerations apply to substitution?
A: The EMH2604-TL-H uses an 8-SMD flat lead package, while the FDMA1032CZ uses a 6-VDFN exposed pad package. The FDMA1032CZ features a smaller 2x2mm footprint. PCB redesign, including trace routing and thermal management modifications, is necessary. The exposed pad on the FDMA1032CZ provides improved thermal performance compared to the flat lead design.
Q: Do both devices support the same operating temperature range?
A: The EMH2604-TL-H specifies a maximum junction temperature of 150°C. The FDMA1032CZ specifies an operating range of -55°C to 150°C, providing extended low-temperature capability. Both devices support equivalent maximum temperature operation.
Q: Are regulatory and compliance requirements identical?
A: Both devices carry identical regulatory classifications: REACH Unaffected, ECCN EAR99, and MSL 1 (Unlimited). Compliance requirements are equivalent for both components.
Q: What gate drive considerations apply when substituting these devices?
A: The FDMA1032CZ exhibits slightly higher gate charge (6nC versus 4.7nC) and marginally lower input capacitance (340pF versus 345pF). Gate driver circuits should be evaluated to confirm adequate drive capability for the FDMA1032CZ's gate charge specification. The difference is minor and typically accommodated by standard logic-level gate drivers.
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