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EMH25T2R Equivalent & Substitute Parts Engineering Reference
Part Overview
EMH25T2R (Rohm Semiconductor) is an active, surface-mount pre-biased bipolar transistor (BJT), featuring dual NPN transistors with integrated bias resistors. It is primarily used in signal switching and amplification within compact electronic assemblies. Alternative models are necessary when supply chain constraints arise or inventory is insufficient, requiring direct component substitution without compromising electrical functionality or compliance.
Substiute Parts
Key Parameters
| Manufacturer Part Number | Manufacturer | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package | RoHS Status | Moisture Sensitivity Level (MSL) | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EMH25T2R | Rohm Semiconductor | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 | ROHS3 Compliant | 1 (Unlimited) | Active |
Substitute Part Grouping Explanation
Substitute parts for EMH25T2R are selected strictly according to shared and compatible electrical and mechanical characteristics. Permitted substitutions must match or exceed the following key parameters: transistor type (including dual configuration and integrated bias resistors), maximum collector current, breakdown voltage, integrated resistor values (R1, R2), DC current gain, saturation voltage, cutoff current, transition frequency, maximum power, mounting type, package specifications, compliance (RoHS3), and active product status.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package | RoHS Status | Moisture Sensitivity Level (MSL) | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EMH25T2R | Rohm Semiconductor | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 | ROHS3 Compliant | 1 (Unlimited) | Active |
| NSBC143ZDXV6T1G | onsemi | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 500mW | Surface Mount | SOT-563, SOT-666 | SOT-563 | ROHS3 Compliant | 1 (Unlimited) | Active |
| RN4906FE,LF(CT) | Toshiba Semiconductor and Storage | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA | 200MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 | ROHS3 Compliant | 1 (Unlimited) | Active |
| RN4986FE,LF(CT) | Toshiba Semiconductor and Storage | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz, 200MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 | ROHS3 Compliant | 1 (Unlimited) | Active |
Engineering Selection Recommendations
All listed substitute parts for EMH25T2R are active products and conform to ROHS3 compliance with a Moisture Sensitivity Level (MSL) of 1 (Unlimited). These parts are eligible for direct substitution within corresponding categories, subject to confirmation of packaging and mechanical integration with existing board layouts. Frequency, package type, and transistor configuration should be verified for system design compatibility within the parameters explicitly specified above.
Frequently Asked Questions (FAQ)
Q1: What criteria determine whether a part can substitute for EMH25T2R?
A1: Substitutes must match electrical parameters—transistor type, collector current, breakdown voltage, integrated resistor values, DC current gain, saturation voltage, cutoff current, maximum power, and packaging. Compliance status and product activity are also required.
Q2: Are both dual NPN and NPN/PNP configurations suitable?
A2: Substitution is only valid if application circuit requirements are satisfied by the transistor configuration. Both 2 NPN and 1 NPN, 1 PNP pre-biased dual configurations are included if all other parameters match.
Q3: Do all substitute parts share the same surface-mount packaging?
A3: All substitutes provided utilize surface-mount format and compatible package types (SOT-563, SOT-666, ES6, EMT6).
Q4: How does RoHS compliance affect selection?
A4: ROHS3 compliance is mandatory for substitute acceptance. All listed substitutes meet ROHS3 requirements.
Q5: Are there differences in collector cutoff current or transition frequency among the substitutes?
A5: While cutoff current and frequency characteristics are provided, only values explicitly stated are considered during substitution. Verify these parameters per application needs using specified data.
Q6: Is product status relevant in substitution?
A6: Active product status is essential to ensure availability and long-term supply for manufacturing or design continuity. All substitutes listed are in active status.
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