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EMH2314-TL-H Equivalent & Substitute Parts
Part Overview
The EMH2314-TL-H is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications requiring logic level gate control. This component integrates two P-channel MOSFETs in a single 8-EMH package with a maximum power dissipation of 1.2W and continuous drain current rating of 5A at 25°C.
The EMH2314-TL-H carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Configuration | 2 P-Channel (Dual) | — |
| Drain to Source Voltage (Vdss) | 12V | V |
| Current - Continuous Drain (Id) @ 25°C | 5A | A |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 2.5A, 4.5V | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 6V | pF |
| Power - Max | 1.2W | W |
| Operating Temperature (TJ) | 150°C | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | 8-SMD, Flat Lead | — |
| Supplier Device Package | 8-EMH | — |
| Technology | MOSFET (Metal Oxide) | — |
| FET Feature | Logic Level Gate | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the EMH2314-TL-H is evaluated based on the following critical parameters that define functional equivalence:
Configuration Match: Both the main part and substitute must feature a dual P-channel MOSFET configuration to maintain circuit topology compatibility.
Logic Level Gate Operation: The substitute must support logic level gate control, ensuring compatibility with standard digital control signals.
Drain to Source Voltage Rating: The substitute must meet or exceed the 12V Vdss requirement to handle the same voltage stress conditions.
Continuous Drain Current: The substitute must support the 5A continuous drain current specification at 25°C to maintain current handling capability.
On-Resistance Characteristics: The substitute's Rds On specification must be comparable to the 37mOhm @ 2.5A, 4.5V rating to ensure similar power dissipation and switching performance.
Gate Charge and Input Capacitance: These parameters influence switching speed and gate drive requirements. Substitutes with similar or lower values maintain circuit timing characteristics.
Power Dissipation: The substitute must support the 1.2W maximum power rating to function within thermal design constraints.
Surface Mount Technology: The substitute must utilize surface mount packaging to maintain PCB assembly compatibility.
The FDMB2308PZ meets the dual P-channel configuration, logic level gate, and surface mount requirements. However, specific electrical parameters differ and require engineering evaluation for application-specific compatibility.
Parameter Comparison
| Parameter | EMH2314-TL-H | FDMB2308PZ | Unit |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | — |
| Configuration | 2 P-Channel (Dual) | 2 P-Channel (Dual) Common Drain | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| FET Feature | Logic Level Gate | Logic Level Gate | — |
| Drain to Source Voltage (Vdss) | 12V | Not Specified | V |
| Current - Continuous Drain (Id) @ 25°C | 5A | Not Specified | A |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 2.5A, 4.5V | 36mOhm @ 5.7A, 4.5V | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V | 30nC @ 10V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 6V | 3030pF @ 10V | pF |
| Power - Max | 1.2W | 800mW | W |
| Operating Temperature (TJ) | 150°C | -55°C ~ 150°C | °C |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package / Case | 8-SMD, Flat Lead | 6-WDFN Exposed Pad | — |
| Supplier Device Package | 8-EMH | 6-MLP (2x3) | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| Product Status | Obsolete | Last Time Buy | — |
Engineering Selection Recommendations
EMH2314-TL-H Status: This component is classified as Obsolete, indicating that onsemi has discontinued production and support. New inventory may become unavailable, making alternative sourcing necessary for ongoing production requirements.
FDMB2308PZ Consideration: The FDMB2308PZ is classified as Last Time Buy, indicating limited remaining availability from onsemi. This component shares the same manufacturer, dual P-channel configuration, logic level gate feature, and surface mount technology as the EMH2314-TL-H.
Compliance and Certifications: Both components carry MSL 1 (Unlimited) moisture sensitivity ratings, indicating robust handling characteristics. Both are REACH Unaffected and classified under ECCN EAR99. The FDMB2308PZ carries RoHS3 Compliance certification, while the EMH2314-TL-H does not specify RoHS status.
Package Differences: The EMH2314-TL-H uses an 8-EMH package (8-SMD, Flat Lead), while the FDMB2308PZ uses a 6-MLP (2x3) package (6-WDFN Exposed Pad). These are physically distinct packages requiring PCB layout modifications.
Electrical Parameter Differences: The FDMB2308PZ exhibits lower maximum power dissipation (800mW versus 1.2W), higher gate charge (30nC @ 10V versus 12nC @ 4.5V), and higher input capacitance (3030pF @ 10V versus 1300pF @ 6V). The Vdss and continuous drain current specifications for the FDMB2308PZ are not provided in available documentation.
Application-Specific Evaluation: Selection between these components requires verification that the FDMB2308PZ electrical characteristics are compatible with the specific application circuit, thermal design, and gate drive requirements.
Frequently Asked Questions (FAQ)
Q: Can the FDMB2308PZ directly replace the EMH2314-TL-H without PCB modifications?
A: No. The FDMB2308PZ uses a 6-MLP (2x3) package, while the EMH2314-TL-H uses an 8-EMH package. These packages have different pin counts, pin configurations, and physical dimensions. PCB layout modifications are required.
Q: What are the key electrical differences between these two parts?
A: The FDMB2308PZ has lower maximum power dissipation (800mW versus 1.2W), higher gate charge (30nC @ 10V versus 12nC @ 4.5V), and higher input capacitance (3030pF @ 10V versus 1300pF @ 6V). The Vdss and continuous drain current specifications for the FDMB2308PZ are not specified in available documentation.
Q: Why is the EMH2314-TL-H marked as Obsolete?
A: Obsolete status indicates that onsemi has discontinued production and support for this component. Existing inventory may be limited, and future availability cannot be guaranteed.
Q: What is the difference between Obsolete and Last Time Buy product status?
A: Obsolete means production has ended with no remaining inventory commitments. Last Time Buy indicates that limited inventory remains available for a final purchase period before complete discontinuation.
Q: Are both components RoHS compliant?
A: The FDMB2308PZ is certified RoHS3 Compliant. The EMH2314-TL-H does not specify RoHS compliance status in available documentation.
Q: How do the gate charge specifications affect circuit design?
A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. The FDMB2308PZ requires 30nC @ 10V compared to 12nC @ 4.5V for the EMH2314-TL-H. Higher gate charge may require increased gate drive current or longer switching times, depending on the gate driver circuit design.
Q: What does the Common Drain configuration in the FDMB2308PZ mean?
A: Common Drain configuration indicates that the drain terminals of both P-channel MOSFETs are internally connected to a single pin. This differs from the EMH2314-TL-H configuration and affects circuit topology requirements.
Q: Are both components suitable for high-temperature applications?
A: Both components support a maximum junction temperature (TJ) of 150°C. The FDMB2308PZ specifies an operating temperature range of -55°C to 150°C, providing extended low-temperature capability.
Q: What is the significance of the Exposed Pad in the FDMB2308PZ package?
A: The 6-WDFN Exposed Pad package includes a thermal pad connected to the source terminal, improving heat dissipation. This is particularly important given the lower maximum power rating (800mW) compared to the EMH2314-TL-H (1.2W).
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