EMH10T2R Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor EMH10T2R is a surface-mount, pre-biased bipolar junction transistor (BJT) featuring two NPN transistors in a dual configuration. Its main attributes include a maximum collector current of 100mA, a maximum collector-emitter voltage of 50V, specific integrated biasing resistors, and a maximum power dissipation rating of 150mW. This device is commonly used in compact, high-density electronic assemblies requiring dual pre-biased NPN transistors. Because of potential supply constraints, changes in lifecycle status, or inventory preferences, it is often necessary to identify alternative model numbers within the same category that satisfy all electrical and mechanical requirements.

Substiute Parts

EMH10T2R
Rohm SemiconductorIn Stock: 19995EMH10T2R Datasheet
EMH10T2R
Current Part
RN1905FE,LF(CT
Toshiba Semiconductor and StorageIn Stock: 1020RN1905FE,LF(CT Datasheet
RN1905FE,LF(CT
Direct
PEMH10,115
Nexperia USA Inc.In Stock: 8481PEMH10,115 Datasheet
PEMH10,115
Similar

Key Parameters

Parameter EMH10T2R
CategoryTransistors, Bipolar (BJT)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6
RoHS StatusROHS3 Compliant
MSL1 (Unlimited)
REACH StatusREACH Unaffected
Product StatusActive

Substitute Part Grouping Explanation

Substitution for the EMH10T2R is determined strictly by matching parameters relevant to the functional, electrical, mechanical, and compliance aspects of pre-biased dual NPN BJTs in this category. Only those parts matching the following parameters are considered valid substitutes:

  • Transistor configuration (2 NPN, pre-biased, dual)
  • Maximum collector current (Ic) and collector-emitter voltage (Vce)
  • Integrated bias resistor values (R1, R2)
  • Power dissipation rating
  • Saturation voltage and current gain (hFE) at specified conditions
  • Cutoff current, transition frequency
  • Mounting type (surface mount) and package (SOT-563, SOT-666 or equivalent)
  • RoHS and REACH status, MSL
  • Product lifecycle status (active or not for new designs, as specified)

Parameter Comparison

Parameter EMH10T2R
(Rohm)
RN1905FE,LF(CT
(Toshiba)
PEMH10,115
(Nexperia)
Transistor Type2 NPN - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA100mA100mA
Voltage - Collector Emitter Breakdown (Max)50V50V50V
Resistor - Base (R1)22kOhms2.2kOhms2.2kOhms
Resistor - Emitter Base (R2)22kOhms47kOhms47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V80 @ 10mA, 5V100 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA300mV @ 250µA, 5mA100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA500nA1µA
Frequency - Transition250MHz250MHz-
Power - Max150mW100mW300mW
Mounting TypeSurface MountSurface MountSurface Mount
Package / CaseSOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666
Supplier Device PackageEMT6ES6SOT-666
RoHS StatusROHS3 CompliantROHS3 CompliantROHS3 Compliant
MSL1 (Unlimited)1 (Unlimited)1 (Unlimited)
REACH StatusREACH Unaffected-REACH Unaffected
Product StatusActiveActiveNot For New Designs

Engineering Selection Recommendations

Selection among EMH10T2R, RN1905FE,LF(CT, and PEMH10,115 can be made based on product status and compliance attributes. EMH10T2R and RN1905FE,LF(CT are both listed as active and ROHS3 compliant with MSL 1 (Unlimited). PEMH10,115 is ROHS3 compliant and MSL 1 (Unlimited) but is specified as not for new designs. Only incorporate those alternatives into a design where product status is compatible with the requirements for new or existing projects.

Frequently Asked Questions (FAQ)

Q1. What are the most critical parameters for substituting dual pre-biased NPN BJTs?
A1. The most critical parameters are transistor configuration (2 NPN, pre-biased), collector current and voltage ratings, bias resistor values (R1 and R2), power dissipation, package compatibility (SOT-563, SOT-666 or equivalent), and compliance status (RoHS, MSL).

Q2. Can parts with different bias resistor values be used interchangeably?
A2. Substitution is only appropriate when the key electrical properties—including R1 and R2—meet the application's requirements as defined by the circuit design criteria.

Q3. Are all substitute parts available in the same package as the EMH10T2R?
A3. All listed substitutes are available in SOT-563, SOT-666, or compatible packages as specified in the provided data.

Q4. How does product status affect component selection?
A4. Selection should be based on product lifecycle status. Only parts marked as active should be considered for new designs, while those labeled not for new designs are suitable for existing products where lifecycle requirements permit.

Q5. Are all listed substitutes compliant with environmental and regulatory standards?
A5. All parts are ROHS3 compliant with an MSL rating of 1 (Unlimited), and where specified, unaffected by REACH status. Only these provided compliance attributes may be used for final selection.

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