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EMH10T2R Equivalent & Substitute Parts Reference
Part Overview
The Rohm Semiconductor EMH10T2R is a surface-mount, pre-biased bipolar junction transistor (BJT) featuring two NPN transistors in a dual configuration. Its main attributes include a maximum collector current of 100mA, a maximum collector-emitter voltage of 50V, specific integrated biasing resistors, and a maximum power dissipation rating of 150mW. This device is commonly used in compact, high-density electronic assemblies requiring dual pre-biased NPN transistors. Because of potential supply constraints, changes in lifecycle status, or inventory preferences, it is often necessary to identify alternative model numbers within the same category that satisfy all electrical and mechanical requirements.
Substiute Parts
Key Parameters
| Parameter | EMH10T2R |
|---|---|
| Category | Transistors, Bipolar (BJT) |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
| RoHS Status | ROHS3 Compliant |
| MSL | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitution for the EMH10T2R is determined strictly by matching parameters relevant to the functional, electrical, mechanical, and compliance aspects of pre-biased dual NPN BJTs in this category. Only those parts matching the following parameters are considered valid substitutes:
- Transistor configuration (2 NPN, pre-biased, dual)
- Maximum collector current (Ic) and collector-emitter voltage (Vce)
- Integrated bias resistor values (R1, R2)
- Power dissipation rating
- Saturation voltage and current gain (hFE) at specified conditions
- Cutoff current, transition frequency
- Mounting type (surface mount) and package (SOT-563, SOT-666 or equivalent)
- RoHS and REACH status, MSL
- Product lifecycle status (active or not for new designs, as specified)
Parameter Comparison
| Parameter | EMH10T2R (Rohm) |
RN1905FE,LF(CT (Toshiba) |
PEMH10,115 (Nexperia) |
|---|---|---|---|
| Transistor Type | 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA | 100mA | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V | 50V | 50V |
| Resistor - Base (R1) | 22kOhms | 2.2kOhms | 2.2kOhms |
| Resistor - Emitter Base (R2) | 22kOhms | 47kOhms | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V | 80 @ 10mA, 5V | 100 @ 100mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | 300mV @ 250µA, 5mA | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA | 500nA | 1µA |
| Frequency - Transition | 250MHz | 250MHz | - |
| Power - Max | 150mW | 100mW | 300mW |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 | ES6 | SOT-666 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | - | REACH Unaffected |
| Product Status | Active | Active | Not For New Designs |
Engineering Selection Recommendations
Selection among EMH10T2R, RN1905FE,LF(CT, and PEMH10,115 can be made based on product status and compliance attributes. EMH10T2R and RN1905FE,LF(CT are both listed as active and ROHS3 compliant with MSL 1 (Unlimited). PEMH10,115 is ROHS3 compliant and MSL 1 (Unlimited) but is specified as not for new designs. Only incorporate those alternatives into a design where product status is compatible with the requirements for new or existing projects.
Frequently Asked Questions (FAQ)
Q1. What are the most critical parameters for substituting dual pre-biased NPN BJTs?
A1. The most critical parameters are transistor configuration (2 NPN, pre-biased), collector current and voltage ratings, bias resistor values (R1 and R2), power dissipation, package compatibility (SOT-563, SOT-666 or equivalent), and compliance status (RoHS, MSL).
Q2. Can parts with different bias resistor values be used interchangeably?
A2. Substitution is only appropriate when the key electrical properties—including R1 and R2—meet the application's requirements as defined by the circuit design criteria.
Q3. Are all substitute parts available in the same package as the EMH10T2R?
A3. All listed substitutes are available in SOT-563, SOT-666, or compatible packages as specified in the provided data.
Q4. How does product status affect component selection?
A4. Selection should be based on product lifecycle status. Only parts marked as active should be considered for new designs, while those labeled not for new designs are suitable for existing products where lifecycle requirements permit.
Q5. Are all listed substitutes compliant with environmental and regulatory standards?
A5. All parts are ROHS3 compliant with an MSL rating of 1 (Unlimited), and where specified, unaffected by REACH status. Only these provided compliance attributes may be used for final selection.
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