EMG8T2R Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor EMG8T2R is a pre-biased, dual NPN Bipolar Junction Transistor (BJT) designed for surface-mount applications in the "Transistors, Bipolar (BJT)" category. It features two integrated pre-biased NPN BJTs in a compact EMT5 package, supporting a maximum collector current of 100mA, with integrated resistors for simplified biasing. The product is active and compliant with RoHS3 and REACH standards.

Finding alternative models like the onsemi NSB1706DMW5T1G is necessary to support supply continuity, design flexibility, or second-sourcing requirements in manufacturing and engineering projects. Only alternative parts strictly matching the declared electrical, mechanical, and compliance parameters are considered.

Substiute Parts

EMG8T2R

Rohm SemiconductorIn Stock: 77469EMG8T2R Datasheet

Current PartRFQ

NSB1706DMW5T1G

onsemiIn Stock: 26346NSB1706DMW5T1G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitutes for EMG8T2R are grouped exclusively on the basis of published electrical, mechanical, and compliance parameters. For this product category, valid substitutes must match or exceed:

• Transistor configuration: 2 NPN - Pre-Biased (Dual)
• Maximum collector current: 100mA
• Maximum collector-emitter voltage: 50V
• Base and emitter resistor values: 4.7kOhms (R1), 47kOhms (R2)
• Minimum DC current gain (hFE)
• Maximum Vce saturation voltage
• Maximum collector cutoff current
• Power dissipation capabilities
• Surface-mount package with lead count and style compatibility
• RoHS and REACH compliance
• Moisture Sensitivity Level (MSL)
• Active product status

Only parts with matching or higher compliance and product status are included.

Parameter Comparison

Engineering Selection Recommendations

Selection among EMG8T2R by Rohm Semiconductor and NSB1706DMW5T1G by onsemi can be based on both parts' active status, ROHS3 compliance, REACH unimpacted status, and unlimited moisture sensitivity level (MSL 1). Both options are suitable for applications requiring current product status and global regulatory conformance within the specified parameter envelope.

Frequently Asked Questions (FAQ)

Q: What electrical parameters must be matched when selecting a substitute for EMG8T2R?
A: The substitute must match transistor configuration, maximum collector current (100mA), maximum collector-emitter voltage (50V), R1 and R2 integrated resistor values (4.7k/47k), minimum current gain, maximum Vce saturation, maximum collector cutoff current, and power rating.

Q: Are package differences significant when substituting EMG8T2R with NSB1706DMW5T1G?
A: Both are surface-mount packages. However, the EMG8T2R uses EMT5 (6-SMD, 5 leads) and the NSB1706DMW5T1G uses SC-88A (SC-70-5/SOT-353, 5-TSSOP), so compatibility with existing layouts and footprints should be verified.

Q: Do both parts meet RoHS and REACH compliance?
A: Both EMG8T2R and NSB1706DMW5T1G are ROHS3 compliant and REACH unaffected.

Q: Is Moisture Sensitivity Level (MSL) the same for both parts?
A: Both parts have an MSL rating of 1 (unlimited).

Q: Are both parts currently active and available for supply continuity?
A: Both the Rohm Semiconductor EMG8T2R and the onsemi NSB1706DMW5T1G are status "Active" per supplied parameters.