Equivalent & Substitute Parts Reference: EMD6FHAT2R

Part Overview

EMD6FHAT2R, manufactured by Rohm Semiconductor, is a surface-mount pre-biased bipolar transistor (BJT) in the Transistors, Bipolar (BJT) category. The device features one NPN and one PNP transistor pair, suitable for automotive-grade and AEC-Q101 qualified applications. With a 50V collector-emitter rating, 100mA maximum collector current, 250MHz transition frequency, and 150mW power dissipation, this component is available in SOT-563 and SOT-666 packages and is RoHS3 compliant. Its product status is “Not For New Designs,” necessitating identification of alternative models for new or current design requirements or in case of supply constraints.

Substiute Parts

EMD6FHAT2R

Rohm SemiconductorIn Stock: 815EMD6FHAT2R Datasheet

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PEMD6,115

Nexperia USA Inc.In Stock: 4789PEMD6,115 Datasheet

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RN1910FE(T5L,F,T)

Toshiba Semiconductor and StorageIn Stock: 960RN1910FE(T5L,F,T) Datasheet

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RN1910FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 5575RN1910FE,LF(CT Datasheet

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RN4990FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 1032RN4990FE,LF(CT Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute selection is performed by matching the following allowed parameters: transistor type and configuration, maximum collector current (Ic), maximum collector-emitter breakdown voltage (Vce), base resistor (R1) value, minimum DC current gain (hFE), maximum Vce saturation, maximum collector cutoff current, transition frequency, maximum power dissipation, mounting type, and package compatibility. RoHS and compliance status are also strictly considered. Only parts matching all stated criteria, or with minimal difference that remains within category limits, are listed.

Parameter Comparison

Engineering Selection Recommendations

EMD6FHAT2R is classified as "Not For New Designs." PEMD6,115, RN4990FE,LF(CT, RN1910FE,LF(CT, and RN1910FE(T5L,F,T) are available substitutes under the Transistors, Bipolar (BJT) category. All listed substitutes provide RoHS compliance, surface-mount compatibility, and similar package footprints (SOT-563, SOT-666). Variations in product status, power dissipation, and transistor configurations must be quantitatively evaluated using the listed parameters. Certificational alignment such as RoHS3 compliance and MSL rating is maintained for all alternatives.

Frequently Asked Questions (FAQ)

Q1: What are the primary substitution criteria for EMD6FHAT2R in the Transistors, Bipolar (BJT) category?
A1: Substitution is based strictly on matching transistor type/configuration, maximum collector current, collector-emitter breakdown voltage, pre-bias base resistor value, current gain, cutoff current, transition frequency, maximum power rating, mounting type, package, and RoHS compliance.

Q2: How does package compatibility affect substitution?
A2: All substitute parts listed are available in SOT-563 and/or SOT-666 packages, ensuring mechanical and footprint compatibility for surface-mount assembly.

Q3: Are all substitutes RoHS compliant?
A3: Yes, all substitutes listed are RoHS or ROHS3 compliant and suitable for use in environmentally regulated applications.

Q4: Is there a difference in transistor configuration among substitutes?
A4: Most substitutes match the 1 NPN, 1 PNP configuration. RN1910FE(T5L,F,T) and RN1910FE,LF(CT offer 2 NPN channels. Selection should align with the required circuit topology.

Q5: What is the significance of product status in substitute selection?
A5: The main part is designated "Not For New Designs." Substitutes with "Active" product status should be selected for current and future design usage.

Q6: Can power dissipation differences affect functional replacement?
A6: Yes. Substitute parts have maximum power ratings ranging from 100mW to 300mW as listed. Selection must match or exceed the application's power requirements as specified in the provided input.