EMD52T2R Equivalent & Substitute Parts

Part Overview

The EMD52T2R is a pre-biased dual transistor (1 NPN + 1 PNP) manufactured by Rohm Semiconductor in SOT-563/EMT6 surface mount packaging. This component is classified as a digital transistor with integrated base resistors, designed for switching and logic applications. The part is currently Active in product status with 1109 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging options are required, or when design revisions call for components with different electrical characteristics within acceptable operating parameters.

Substiute Parts

EMD52T2R
Rohm SemiconductorIn Stock: 1139EMD52T2R Datasheet
EMD52T2R
Current Part
NSBC124EDXV6T1G
onsemiIn Stock: 4752NSBC124EDXV6T1G Datasheet
NSBC124EDXV6T1G
Direct
NSBC124EDXV6T5G
onsemiIn Stock: 798NSBC124EDXV6T5G Datasheet
NSBC124EDXV6T5G
Direct
RN4983FE,LF(CT
Toshiba Semiconductor and StorageIn Stock: 4828RN4983FE,LF(CT Datasheet
RN4983FE,LF(CT
Direct
NSVBC124EDXV6T1G
onsemiIn Stock: 905NSVBC124EDXV6T1G Datasheet
NSVBC124EDXV6T1G
Upgrade
PEMD2,115
Nexperia USA Inc.In Stock: 3856PEMD2,115 Datasheet
PEMD2,115
Upgrade
PEMH1,115
Nexperia USA Inc.In Stock: 5221PEMH1,115 Datasheet
PEMH1,115
Upgrade

Key Parameters

Parameter Value Unit
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Collector Current (Ic) 100 mA
Collector-Emitter Breakdown Voltage (Max) 50 V
Base Resistor (R1) 22
Emitter-Base Resistor (R2) 22
DC Current Gain (hFE Min) 60 @ 5mA, 10V
Vce Saturation (Max) 150 mV @ 500µA, 5mA
Collector Cutoff Current (Max) 500 nA
Transition Frequency 250 MHz
Maximum Power Dissipation 150 mW
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the EMD52T2R is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor configuration (1 NPN + 1 PNP dual pre-biased structure)
  • Maximum collector current: 100 mA
  • Collector-emitter breakdown voltage: 50 V
  • Base and emitter-base resistor values: 22 kΩ each
  • DC current gain minimum: 60 @ 5mA, 10V
  • Vce saturation characteristics
  • Collector cutoff current specifications

Mechanical Compatibility Criteria:

  • Surface mount packaging (SOT-563 or SOT-666)
  • Pin configuration compatibility
  • Moisture sensitivity level: 1 (Unlimited)

Regulatory Compliance:

  • RoHS3 compliance
  • REACH unaffected status
  • EAR99 classification

Substitute parts are grouped into two categories: Direct Substitutes (functionally equivalent with identical or superior electrical ratings) and Upgrade Options (enhanced performance characteristics or improved product status).

Parameter Comparison

Parameter EMD52T2R (Rohm) NSBC124EDXV6T1G (onsemi) NSBC124EDXV6T5G (onsemi) RN4983FE,LF(CT (Toshiba) NSVBC124EDXV6T1G (onsemi) PEMD2,115 (Nexperia) PEMH1,115 (Nexperia)
Transistor Type 1 NPN, 1 PNP 2 NPN 2 NPN 1 NPN, 1 PNP 2 NPN 1 NPN, 1 PNP 2 NPN
Ic (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Vce Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
R1 (Base Resistor) 22 kΩ 22 kΩ 22 kΩ 22 kΩ 22 kΩ 22 kΩ 22 kΩ
R2 (Emitter-Base Resistor) 22 kΩ 22 kΩ 22 kΩ 22 kΩ 22 kΩ 22 kΩ 22 kΩ
hFE (Min) 60 @ 5mA, 10V 60 @ 5mA, 10V 60 @ 5mA, 10V 70 @ 10mA, 5V 60 @ 5mA, 10V 60 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) 150 mV @ 500µA, 5mA 250 mV @ 300µA, 10mA 250 mV @ 300µA, 10mA 300 mV @ 250µA, 5mA 250 mV @ 300µA, 10mA 150 mV @ 500µA, 10mA 150 mV @ 500µA, 10mA
Icbo (Max) 500 nA 500 nA 500 nA 100 nA 500 nA 1 µA 1 µA
Transition Frequency 250 MHz 250 MHz
Power (Max) 150 mW 500 mW 500 mW 100 mW 500 mW 300 mW 300 mW
Package SOT-563 (EMT6) SOT-563 SOT-563 SOT-563 (ES6) SOT-563 SOT-666 SOT-666
Product Status Active Active Obsolete Active Last Time Buy Not For New Designs Not For New Designs
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute (Direct Replacement):

NSBC124EDXV6T1G (onsemi) is the recommended direct substitute for the EMD52T2R. This part maintains Active product status, meets all electrical parameter requirements, and provides superior power dissipation capability (500 mW vs. 150 mW). Both parts are RoHS3 compliant and carry MSL 1 rating. The primary difference is transistor configuration (2 NPN vs. 1 NPN + 1 PNP), which requires circuit-level evaluation for compatibility.

Alternative Substitute (Functional Equivalent):

RN4983FE,LF(CT (Toshiba Semiconductor) provides an exact transistor configuration match (1 NPN + 1 PNP) with Active product status. This part maintains the 50V/100mA electrical envelope and 250 MHz transition frequency. Vce saturation characteristics differ slightly (300 mV vs. 150 mV), and power dissipation is lower (100 mW vs. 150 mW). This part is suitable for applications where the dual NPN/PNP configuration is critical.

Secondary Options (Upgrade Path):

PEMD2,115 (Nexperia) and PEMH1,115 (Nexperia) are available as upgrade options with enhanced power dissipation (300 mW) and improved Vce saturation characteristics (150 mV). Both parts carry "Not For New Designs" status, limiting their use to legacy system support or inventory management scenarios. These parts are available in SOT-666 packaging, which differs from the EMD52T2R SOT-563 package.

NSVBC124EDXV6T1G (onsemi) carries Last Time Buy status and should be considered only for long-term inventory planning or end-of-life applications.

Obsolete Parts:

NSBC124EDXV6T5G (onsemi) is marked Obsolete and should not be selected for new designs or ongoing production.

Frequently Asked Questions (FAQ)

Q: Can NSBC124EDXV6T1G replace EMD52T2R directly in my circuit?

A: NSBC124EDXV6T1G is electrically compatible within the specified parameter envelope (50V, 100mA, 22kΩ base resistors). The primary difference is transistor configuration: NSBC124EDXV6T1G contains 2 NPN transistors, while EMD52T2R contains 1 NPN + 1 PNP. Circuit-level evaluation is required to confirm functional equivalence for your specific application.

Q: What is the difference between SOT-563 and SOT-666 packaging?

A: SOT-563 and SOT-666 are both surface mount packages for dual transistors but differ in physical dimensions and pin layout. EMD52T2R uses SOT-563 (EMT6 supplier designation). PEMD2,115 and PEMH1,115 use SOT-666 packaging. These packages are not mechanically interchangeable; PCB layout modifications are required for package substitution.

Q: Why do some substitute parts have higher power ratings (500 mW vs. 150 mW)?

A: Higher power ratings indicate greater thermal capability and margin for transient conditions. Parts with 500 mW ratings (NSBC124EDXV6T1G, NSVBC124EDXV6T1G) provide additional design margin but do not change the electrical switching characteristics. Selection should be based on circuit power dissipation requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All parts listed—EMD52T2R, NSBC124EDXV6T1G, NSBC124EDXV6T5G, RN4983FE,LF(CT, NSVBC124EDXV6T1G, PEMD2,115, and PEMH1,115—are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Q: What does "Not For New Designs" status mean?

A: "Not For New Designs" indicates that the manufacturer no longer recommends the part for new product development. PEMD2,115 and PEMH1,115 carry this status. These parts remain available for legacy system support and existing inventory management but should not be selected for new circuit designs.

Q: Which substitute offers the best long-term availability?

A: NSBC124EDXV6T1G (onsemi) with Active status and 4706 units in stock offers the strongest long-term availability profile. RN4983FE,LF(CT (Toshiba) also maintains Active status with 4720 units in stock. Both parts are suitable for production designs requiring sustained component supply.

Q: Can I use RN4983FE,LF(CT as a drop-in replacement for EMD52T2R?

A: RN4983FE,LF(CT maintains the 1 NPN + 1 PNP configuration and meets the 50V/100mA electrical envelope. However, Vce saturation characteristics differ (300 mV vs. 150 mV at different bias points), and power dissipation is lower (100 mW vs. 150 mW). Circuit-level validation is required to confirm functional equivalence.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Transistor type and configuration (NPN/PNP count), (2) Maximum collector current (100 mA), (3) Collector-emitter breakdown voltage (50 V), (4) Base resistor values (22 kΩ), (5) DC current gain minimum (60), (6) Surface mount packaging compatibility, and (7) RoHS3 compliance. Deviations in any of these parameters require circuit-level evaluation.

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