EMD4T2R Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor EMD4T2R is a surface-mount pre-biased bipolar transistor (BJT) array, featuring dual transistors (1 NPN, 1 PNP). It is designed for applications requiring compact, integrated resistor-transistor solutions, housed in EMT6/SOT-563/SOT-666 packages. The product is classified as active. Identifying equivalent or substitute models is necessary for supply chain security, multi-source procurement, or pin-to-pin compatibility within transistors, bipolar (BJT) categories, especially when similar electrical and package parameters are required.

Substiute Parts

EMD4T2R
Rohm SemiconductorIn Stock: 71682EMD4T2R Datasheet
EMD4T2R
Current Part
EMD4DXV6T1G
onsemiIn Stock: 25298EMD4DXV6T1G Datasheet
EMD4DXV6T1G
Similar

Key Parameters

Parameter EMD4T2R
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector-Emitter Voltage (Max) 50V
Collector Current (Ic) (Max) 100mA
Resistor - Base (R1) 47kOhms, 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Collector Cutoff Current (Max) 500nA
Power Dissipation (Max) 150mW
Frequency Transition 250MHz
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
MSL 1 (Unlimited)
REACH Status REACH Unaffected
Product Status Active

Substitute Part Grouping Explanation

Equivalent and substitute BJT array models are identified by matching the following key parameters: transistor type (dual pre-biased NPN/PNP), maximum collector-emitter voltage (50V), maximum collector current (100mA), resistor values (R1 and R2), maximum collector cutoff current, mounting type (surface mount), package type (SOT-563/SOT-666), RoHS/REACH compliance, and product status. These are the required characteristics to ensure electrical, mechanical, and compliance compatibility in the transistors, bipolar (BJT) category.

Parameter Comparison

Parameter EMD4T2R
(Rohm Semiconductor)
EMD4DXV6T1G
(onsemi)
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector-Emitter Voltage (Max) 50V 50V
Collector Current (Max) 100mA 100mA
Resistor - Base (R1) 47kOhms, 10kOhms 47kOhms, 10kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA 250mV @ 300µA, 10mA
Collector Cutoff Current (Max) 500nA 500nA
Power Dissipation (Max) 150mW 500mW
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Active Active

Engineering Selection Recommendations

Both EMD4T2R and EMD4DXV6T1G are classified as active and are ROHS3 compliant with REACH unaffected status. Moisture Sensitivity Level for both is 1 (Unlimited), indicating no special handling is required beyond standard industry processes. Both are suitable for use in environmentally regulated and compliant assemblies based on the provided certification parameters.

Frequently Asked Questions (FAQ)

Q: What criteria determine if EMD4DXV6T1G is a substitute for EMD4T2R?
A: Substitution is determined by matching transistor type, collector-emitter voltage, collector current, base and emitter resistor values, package type, mounting type, RoHS/REACH compliance, and active product status.

Q: Are the SOT-563, SOT-666 packages mechanically compatible across the EMD4T2R and EMD4DXV6T1G?
A: Yes, both are specified for SOT-563 and SOT-666 packages, confirming mechanical and PCB footprint compatibility.

Q: Do the substitute and main parts maintain the same compliance and environmental status?
A: Yes, both parts are ROHS3 compliant, REACH unaffected, and have MSL 1, aligning with industry and regulatory requirements.

Q: Are the base and emitter resistor networks equivalent across the part numbers?
A: Yes, both EMD4T2R and EMD4DXV6T1G specify the same resistor values for base (R1) and emitter base (R2).

Q: Is there a difference in collector current or collector-emitter voltage allowances?
A: No, both parts are specified at 100mA maximum collector current and 50V maximum collector-emitter voltage.

Q: Are there any differences in power dissipation ratings?
A: The EMD4DXV6T1G has a higher maximum power dissipation rating (500mW), while EMD4T2R is specified at 150mW. Both share the required minimum.

Q: Is the substitute part actively manufactured and supplied?
A: Yes, EMD4DXV6T1G is listed with active product status and in-stock inventory.

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