Request Quote
(Ships tomorrow)
EMD4T2R Equivalent & Substitute Parts Reference
Part Overview
The Rohm Semiconductor EMD4T2R is a surface-mount pre-biased bipolar transistor (BJT) array, featuring dual transistors (1 NPN, 1 PNP). It is designed for applications requiring compact, integrated resistor-transistor solutions, housed in EMT6/SOT-563/SOT-666 packages. The product is classified as active. Identifying equivalent or substitute models is necessary for supply chain security, multi-source procurement, or pin-to-pin compatibility within transistors, bipolar (BJT) categories, especially when similar electrical and package parameters are required.
Substiute Parts
Key Parameters
| Parameter | EMD4T2R |
|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Collector-Emitter Voltage (Max) | 50V |
| Collector Current (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 47kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA |
| Collector Cutoff Current (Max) | 500nA |
| Power Dissipation (Max) | 150mW |
| Frequency Transition | 250MHz |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| MSL | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| Product Status | Active |
Substitute Part Grouping Explanation
Equivalent and substitute BJT array models are identified by matching the following key parameters: transistor type (dual pre-biased NPN/PNP), maximum collector-emitter voltage (50V), maximum collector current (100mA), resistor values (R1 and R2), maximum collector cutoff current, mounting type (surface mount), package type (SOT-563/SOT-666), RoHS/REACH compliance, and product status. These are the required characteristics to ensure electrical, mechanical, and compliance compatibility in the transistors, bipolar (BJT) category.
Parameter Comparison
| Parameter | EMD4T2R (Rohm Semiconductor) |
EMD4DXV6T1G (onsemi) |
|---|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Collector-Emitter Voltage (Max) | 50V | 50V |
| Collector Current (Max) | 100mA | 100mA |
| Resistor - Base (R1) | 47kOhms, 10kOhms | 47kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA | 250mV @ 300µA, 10mA |
| Collector Cutoff Current (Max) | 500nA | 500nA |
| Power Dissipation (Max) | 150mW | 500mW |
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active |
Engineering Selection Recommendations
Both EMD4T2R and EMD4DXV6T1G are classified as active and are ROHS3 compliant with REACH unaffected status. Moisture Sensitivity Level for both is 1 (Unlimited), indicating no special handling is required beyond standard industry processes. Both are suitable for use in environmentally regulated and compliant assemblies based on the provided certification parameters.
Frequently Asked Questions (FAQ)
Q: What criteria determine if EMD4DXV6T1G is a substitute for EMD4T2R?
A: Substitution is determined by matching transistor type, collector-emitter voltage, collector current, base and emitter resistor values, package type, mounting type, RoHS/REACH compliance, and active product status.
Q: Are the SOT-563, SOT-666 packages mechanically compatible across the EMD4T2R and EMD4DXV6T1G?
A: Yes, both are specified for SOT-563 and SOT-666 packages, confirming mechanical and PCB footprint compatibility.
Q: Do the substitute and main parts maintain the same compliance and environmental status?
A: Yes, both parts are ROHS3 compliant, REACH unaffected, and have MSL 1, aligning with industry and regulatory requirements.
Q: Are the base and emitter resistor networks equivalent across the part numbers?
A: Yes, both EMD4T2R and EMD4DXV6T1G specify the same resistor values for base (R1) and emitter base (R2).
Q: Is there a difference in collector current or collector-emitter voltage allowances?
A: No, both parts are specified at 100mA maximum collector current and 50V maximum collector-emitter voltage.
Q: Are there any differences in power dissipation ratings?
A: The EMD4DXV6T1G has a higher maximum power dissipation rating (500mW), while EMD4T2R is specified at 150mW. Both share the required minimum.
Q: Is the substitute part actively manufactured and supplied?
A: Yes, EMD4DXV6T1G is listed with active product status and in-stock inventory.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts

