EMD3FHAT2R Equivalent & Substitute Parts

Part Overview

The EMD3FHAT2R is a pre-biased dual bipolar transistor (BJT) manufactured by Rohm Semiconductor, configured as 1 NPN and 1 PNP transistor pair in a single surface mount package. This component is classified as Not For New Designs, indicating it has been superseded in Rohm's product portfolio. The part operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 250MHz transition frequency. Finding equivalent substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within the specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300	mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250	MHz
Power - Max	150	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the EMD3FHAT2R are grouped based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Transistor configuration (1 NPN, 1 PNP dual or 2 NPN dual)
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Base and emitter-base resistor values: 10kOhms
Surface mount packaging: SOT-563 or SOT-666
RoHS3 compliance and MSL 1 rating

Secondary Compatibility Parameters:

DC current gain (hFE) minimum specification
Vce saturation characteristics
Collector cutoff current
Transition frequency (where specified)
Power dissipation rating

Parts are classified into two substitution categories:

Direct Equivalents (Same Configuration): Parts with identical 1 NPN, 1 PNP configuration matching the EMD3FHAT2R transistor type.
Functional Equivalents (Alternative Configuration): Parts with 2 NPN configuration that provide equivalent electrical performance for applications where the specific transistor pairing is not critical to circuit function.

All substitute parts listed maintain the core electrical specifications and surface mount form factor required for direct board-level replacement.

Parameter Comparison

Parameter	EMD3FHAT2R (Rohm)	PEMH11,115 (Nexperia)	NSBC114EDXV6T1G (onsemi)	NSVBC114EDXV6T1G (onsemi)	PEMD3,315 (Nexperia)	RN1902FE,LF(CT (Toshiba)	RN4902FE,LF(CT (Toshiba)	RN4982FE,LF(CT (Toshiba)
Transistor Type	1 NPN, 1 PNP	2 NPN	2 NPN	2 NPN	1 NPN, 1 PNP	2 NPN	1 NPN, 1 PNP	1 NPN, 1 PNP
Current - Collector (Ic) (Max)	100	100	100	100	100	100	100	100
Voltage - Collector Emitter Breakdown (Max)	50	50	50	50	50	50	50	50
Resistor - Base (R1)	10k	10k	10k	10k	10k	10k	10k	10k
Resistor - Emitter Base (R2)	10k	10k	10k	10k	10k	1k	10k	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	30 @ 5mA, 5V	35 @ 5mA, 10V	35 @ 5mA, 10V	30 @ 5mA, 5V	30 @ 10mA, 5V	50 @ 10mA, 5V	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300 @ 500µA, 10mA	150 @ 500µA, 10mA	250 @ 300µA, 10mA	250 @ 300µA, 10mA	150 @ 500µA, 10mA	300 @ 250µA, 5mA	300 @ 250µA, 5mA	300 @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA	1µA	500nA	500nA	1µA	100nA	500nA	100nA
Frequency - Transition	250MHz	—	—	—	—	250MHz	250MHz, 200MHz	250MHz
Power - Max	150mW	300mW	500mW	500mW	300mW	100mW	100mW	100mW
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Not For New Designs	Not For New Designs	Active	Active	Not For New Designs	Active	Active	Active

Engineering Selection Recommendations

For Direct Configuration Replacement (1 NPN, 1 PNP):

PEMD3,315 (Nexperia) and RN4982FE,LF(CT (Toshiba) provide direct transistor configuration equivalence to the EMD3FHAT2R. Both parts maintain the 1 NPN, 1 PNP dual configuration with identical base and emitter-base resistor values (10kOhms). PEMD3,315 carries Not For New Designs status matching the main part, while RN4982FE,LF(CT maintains Active product status. RN4982FE,LF(CT offers superior transition frequency specification (250MHz) and lower collector cutoff current (100nA), providing enhanced performance characteristics within the same electrical envelope.

For Alternative Configuration Replacement (2 NPN):

NSBC114EDXV6T1G and NSVBC114EDXV6T1G (both onsemi) are Active products offering 2 NPN configuration with 50V/100mA ratings and 10kOhms base resistors. Both parts provide higher power dissipation (500mW) compared to the main part (150mW). NSBC114EDXV6T1G and NSVBC114EDXV6T1G are electrically identical and suitable for applications where dual NPN configuration meets circuit requirements.

PEMH11,115 (Nexperia) provides 2 NPN configuration with 300mW power rating and Not For New Designs status. This part offers lower Vce saturation (150mV) compared to the main part (300mV).

RN1902FE,LF(CT (Toshiba) is an Active 2 NPN product with 250MHz transition frequency and 100mW power rating. This part features a 1kOhms emitter-base resistor (R2) differing from the standard 10kOhms specification, requiring circuit-level evaluation for compatibility.

Compliance and Qualification:

All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with automotive and industrial assembly processes. The EMD3FHAT2R carries AEC-Q101 automotive qualification; substitute parts should be evaluated for equivalent automotive qualification where required by application specifications.

Frequently Asked Questions (FAQ)

Q: Can NSBC114EDXV6T1G replace EMD3FHAT2R directly on the PCB?

A: NSBC114EDXV6T1G is electrically compatible within the specified parameters (50V, 100mA, 10kOhms base resistors, SOT-563/SOT-666 package). However, it features 2 NPN configuration versus the EMD3FHAT2R's 1 NPN, 1 PNP configuration. Direct PCB replacement is possible only if the circuit design does not require the complementary PNP transistor function. Verify circuit schematic requirements before substitution.

Q: What is the difference between NSBC114EDXV6T1G and NSVBC114EDXV6T1G?

A: Both parts are electrically identical onsemi products with 2 NPN configuration, 50V/100mA ratings, and 500mW power dissipation. Both maintain SOT-563/SOT-666 package compatibility and ROHS3 compliance. Selection between these parts is based on availability and supplier preference, as electrical performance is equivalent.

Q: Why does RN1902FE,LF(CT have a 1kOhms emitter-base resistor instead of 10kOhms?

A: RN1902FE,LF(CT is specified with R2 = 1kOhms versus the standard 10kOhms in the EMD3FHAT2R. This parameter difference affects transistor switching characteristics and bias behavior. Circuit-level analysis is required to determine if this specification variance is acceptable for the intended application.

Q: Which substitute part has the best product status for new applications?

A: NSBC114EDXV6T1G, NSVBC114EDXV6T1G, RN1902FE,LF(CT, RN4902FE,LF(CT, and RN4982FE,LF(CT all carry Active product status. These parts are currently supported by their respective manufacturers and recommended for new design implementations. PEMH11,115 and PEMD3,315 carry Not For New Designs status, matching the main part's lifecycle status.

Q: Are all substitute parts available in both SOT-563 and SOT-666 packages?

A: All substitute parts listed support both SOT-563 and SOT-666 package options. Verify specific package availability with the supplier, as individual part numbers may be designated for specific package variants (e.g., NSBC114EDXV6T1G is supplied in SOT-563, while PEMH11,115 is supplied in SOT-666).

Q: What is the significance of the 250MHz transition frequency specification?

A: The EMD3FHAT2R specifies 250MHz transition frequency, indicating maximum switching speed capability. RN1902FE,LF(CT, RN4902FE,LF(CT, and RN4982FE,LF(CT maintain this 250MHz specification. PEMH11,115, NSBC114EDXV6T1G, NSVBC114EDXV6T1G, and PEMD3,315 do not specify transition frequency in their datasheets. For high-frequency switching applications, parts with specified 250MHz capability provide documented performance assurance.

Q: Can I use RN4982FE,LF(CT as a drop-in replacement for EMD3FHAT2R?

A: RN4982FE,LF(CT provides direct configuration equivalence (1 NPN, 1 PNP), identical base and emitter-base resistor values (10kOhms), and matching 50V/100mA electrical ratings. The part is available in SOT-563/SOT-666 packages with ROHS3 compliance and MSL 1 rating. RN4982FE,LF(CT is an Active product with 250MHz transition frequency and lower collector cutoff current (100nA), offering equivalent or superior performance characteristics for direct substitution.

Q: What power dissipation differences exist among substitute parts?

A: The EMD3FHAT2R is rated at 150mW. Substitute parts range from 100mW (RN1902FE,LF(CT, RN4902FE,LF(CT, RN4982FE,LF(CT) to 500mW (NSBC114EDXV6T1G, NSVBC114EDXV6T1G). Higher power ratings provide thermal margin for continuous operation. Lower power ratings (100mW) require verification that application duty cycles remain within specification limits.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. This ensures compatibility with lead-free assembly processes and automotive/industrial environmental requirements matching the EMD3FHAT2R specification.

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