EMB9T2R Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor EMB9T2R is a surface-mount, dual pre-biased PNP bipolar transistor (BJT), categorized under Transistors, Bipolar (BJT). This SOT-563 (EMT6) packaged component features integrated bias resistors, supporting 50V collector-emitter breakdown and 100mA maximum collector current with a power rating of 150mW and a transition frequency of 250MHz. Currently listed as "Not For New Designs," finding equivalent and substitute models is necessary for sustaining existing designs or replacing obsolete stock. Suitable alternatives must match the defined electrical and mechanical parameters.

Substiute Parts

EMB9T2R

Rohm SemiconductorIn Stock: 34400EMB9T2R Datasheet

Current PartRFQ

DDA114YH-7

Diodes IncorporatedIn Stock: 57410DDA114YH-7 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts are grouped strictly following the parameters provided for the EMB9T2R in the category of pre-biased bipolar transistors. Only devices with 2 PNP - Pre-Biased (Dual) configuration, matching electrical thresholds (50V collector-emitter breakdown, 100mA collector current), integrated bias resistors (10kOhms/47kOhms), equivalent hFE characteristics, transition frequency (250MHz), and maximum power dissipation (150mW) were considered. Surface mount compatibility and package/case equivalence (SOT-563, SOT-666) were also required. Compliance with RoHS3, REACH, and unlimited MSL is mandatory.

Parameter Comparison

Engineering Selection Recommendations

The EMB9T2R is currently designated Not For New Designs, necessitating the selection of compliant substitute parts for ongoing or replacement requirements. The DDA114YH-7 from Diodes Incorporated is compliant with RoHS3 and REACH, with an unlimited moisture sensitivity level (MSL 1), and meets all specified electrical and mechanical parameters. All substitutes must match product status, regulatory compliance, and packaging to ensure compatibility in approved designs.

Frequently Asked Questions (FAQ)

Q1: What are the key factors for substituting EMB9T2R?
A1: Substitution requires matching transistor type (2 PNP - Pre-Biased Dual), collector current (100mA), voltage rating (50V), integrated resistor values (R1/R2: 10kOhms/47kOhms), transition frequency (250MHz), maximum power (150mW), package/case (SOT-563, SOT-666), surface mounting, and certifications (RoHS3, REACH).

Q2: Is package compatibility important for substituting pre-biased BJTs?
A2: Yes. Substitutes must utilize the same surface-mount package (SOT-563, SOT-666) to ensure direct compatibility with the PCB footprint and assembly process.

Q3: Do substitute parts require identical electrical ratings?
A3: All listed substitutes are strictly matched to collector current, breakdown voltage, power rating, resistor values, hFE, Vce saturation, and transition frequency, as specified in the input parameters.

Q4: How critical is regulatory compliance in selecting equivalent transistors?
A4: Regulatory compliance (RoHS3, REACH) and moisture sensitivity (MSL 1) are mandatory criteria for selecting substitutes, ensuring environmental and operational compatibility with existing specifications.

Q5: Can substitute parts be used in new designs?
A5: Only parts with an "Active" product status are suitable for new designs; EMB9T2R is "Not For New Designs," while substitutes like DDA114YH-7 are "Active" and can be used in new applications per provided status.