EMA3T2R Equivalent & Substitute Parts Reference

Part Overview

EMA3T2R (Manufacturer Part Number: EMA3T2R, Rohm Semiconductor) is an active Pre-Biased Bipolar Transistor (BJT) featuring dual PNP configuration (Emitter Coupled) with pre-biasing. It is designed for surface mount usage in the EMT5 package and is compliant with ROHS3 and REACH requirements. When evaluating the need for substitute parts, considerations typically include electrical equivalence, package compatibility, and regulatory compliance. Substitution may be required due to inventory constraints, supply chain optimization, or design standardization.

Substiute Parts

EMA3T2R

Rohm SemiconductorIn Stock: 1106EMA3T2R Datasheet

Current PartRFQ

RN2710JE(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 4638RN2710JE(TE85L,F) Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for EMA3T2R are identified strictly by matching key electrical parameters (transistor type, collector current, voltage rating, base resistor value, current gain, cutoff current, transition frequency, power rating), mounting type (surface mount), and regulatory compliance. Package equivalence is considered by using supplier device package and case identifiers. Only parts fulfilling these criteria, such as the RN2710JE(TE85L,F), are included.

Key parameters for substitution:

• Transistor Type
• Collector Current (Ic)
• Collector-Emitter Voltage (Vce)
• Base Resistor (R1)
• DC Current Gain (hFE)
• Vce Saturation
• Collector Cutoff Current (ICBO)
• Transition Frequency
• Power Rating
• Mounting Type
• Package / Case
• Regulatory Compliance (RoHS, MSL)

Parameter Comparison

Engineering Selection Recommendations

EMA3T2R and RN2710JE(TE85L,F) are both active, RoHS-compliant, and carry an MSL of 1 (Unlimited). Both are listed as new original stock. The substitute meets the required compliance and certification standards listed in the provided parameters.

Frequently Asked Questions (FAQ)

Q: What are the critical electrical parameters for substituting EMA3T2R?
A: Transistor type, collector current (Ic), collector-emitter voltage (Vce), base resistor value (R1), DC current gain (hFE), Vce saturation, collector cutoff current (ICBO), frequency transition, and power rating.

Q: Are the mounting types and packages interchangeable between EMA3T2R and RN2710JE(TE85L,F)?
A: Both are surface-mount transistors. EMA3T2R uses EMT5, while RN2710JE(TE85L,F) uses ESV (SOT-553). Package form factor should be evaluated for footprint compatibility.

Q: Are the regulatory compliance standards equivalent?
A: EMA3T2R is ROHS3 compliant and REACH unaffected; RN2710JE(TE85L,F) is RoHS compliant. Both have Moisture Sensitivity Level (MSL) 1 (Unlimited).

Q: Is the product status of the substitute part adequate for ongoing manufacturing?
A: Both EMA3T2R and RN2710JE(TE85L,F) are marked as Active status in the provided information.

Q: Which key parameter differences exist between the main and substitute parts?
A: RN2710JE(TE85L,F) has a higher DC current gain (hFE), lower collector cutoff current (ICBO), lower transition frequency, lower power rating, and a different package/case designation as detailed in the parameter comparison section.