EM1B Equivalent & Substitute Parts

Part Overview

The EM1B is a general-purpose rectifier diode manufactured by Sanken Electric USA Inc., rated for 800 V DC reverse voltage and 1 A average rectified current in an axial through-hole package. This component is classified as Active product status and is RoHS Compliant. Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when sourcing from multiple suppliers is needed for supply chain continuity.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	800 V
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	1.05 V @ 1 A
Speed	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	20 µA @ 800 V
Mounting Type	Through Hole
Package / Case	Axial
Operating Temperature - Junction	-40°C ~ 150°C
RoHS Status	RoHS Compliant

Substitute Part Grouping Explanation

Substitute parts for the EM1B are grouped based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 800 V minimum
Current - Average Rectified (Io): 1 A
Mounting Type: Through Hole
Package / Case: Axial or DO-204AL (DO-41) compatible
Speed: Standard Recovery >500ns, > 200mA (Io)

Substitution Logic: Parts with identical or superior voltage and current ratings, matching through-hole mounting, and compatible axial or DO-41 package formats are classified as direct substitutes. Parts with higher voltage ratings (1000 V) are listed as functional alternatives but operate outside the original specification envelope. Parts with different recovery speeds or significantly different reverse leakage characteristics are noted for application-specific evaluation.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	Speed	Ir @ Vr	Package	Temp Range	Product Status
EM1B	Sanken Electric USA Inc.	800 V	1 A	1.05 V @ 1 A	Standard >500ns	20 µA @ 800 V	Axial	-40°C ~ 150°C	Active
1N4006-E3/54	Vishay General Semiconductor	800 V	1 A	1.1 V @ 1 A	Standard >500ns	5 µA @ 800 V	DO-204AL (DO-41)	-55°C ~ 150°C	Active
1N4006-E3/73	Vishay General Semiconductor	800 V	1 A	1.1 V @ 1 A	Standard >500ns	5 µA @ 800 V	DO-204AL (DO-41)	-55°C ~ 150°C	Active
1N4006-T	Diodes Incorporated	800 V	1 A	1 V @ 1 A	Standard >500ns	5 µA @ 800 V	DO-41	-65°C ~ 150°C	Last Time Buy
1N4006G	Taiwan Semiconductor Corporation	800 V	1 A	1 V @ 1 A	Standard >500ns	5 µA @ 800 V	DO-204AL (DO-41)	-55°C ~ 150°C	Active
1N4006G-T	Diodes Incorporated	800 V	1 A	1 V @ 1 A	Standard >500ns	5 µA @ 800 V	DO-41	-65°C ~ 175°C	Active
1N4006RLG	onsemi	800 V	1 A	1.1 V @ 1 A	Standard >500ns	10 µA @ 800 V	Axial	-65°C ~ 175°C	Not For New Designs
1N4007-E3/53	Vishay General Semiconductor	1000 V	1 A	1.1 V @ 1 A	Standard >500ns	5 µA @ 1000 V	DO-204AL (DO-41)	-50°C ~ 150°C	Active
1N4007-E3/54	Vishay General Semiconductor	1000 V	1 A	1.1 V @ 1 A	Standard >500ns	5 µA @ 1000 V	DO-204AL (DO-41)	-50°C ~ 150°C	Active
1N4007E-E3/53	Vishay General Semiconductor	1000 V	1 A	1.1 V @ 1 A	Standard >500ns	5 µA @ 1000 V	DO-204AL (DO-41)	-50°C ~ 150°C	Active
1N4947GP-E3/54	Vishay General Semiconductor	800 V	1 A	1.3 V @ 1 A	Fast ≤500ns	1 µA @ 800 V	DO-204AL (DO-41)	-65°C ~ 175°C	Active

Engineering Selection Recommendations

Direct Substitutes (800 V, 1 A, Standard Recovery):

The following parts are direct electrical and functional equivalents to the EM1B:

1N4006-E3/54 and 1N4006-E3/73 (Vishay): Both are Active status, RoHS3 Compliant, with identical voltage and current ratings. These parts feature lower reverse leakage (5 µA vs. 20 µA) and extended temperature range (-55°C to 150°C). Available in DO-204AL (DO-41) package format.
1N4006G (Taiwan Semiconductor Corporation): Active status, RoHS3 Compliant, with superior forward voltage (1 V vs. 1.05 V) and lower reverse leakage. Operating temperature range -55°C to 150°C.
1N4006G-T (Diodes Incorporated): Active status, RoHS3 Compliant, with extended temperature range to 175°C and lowest forward voltage (1 V). Highest inventory availability (10,527 pcs).
1N4006RLG (onsemi): Axial package format matching the EM1B. Product status is "Not For New Designs"; use only for legacy system maintenance or replacement applications.

Functional Alternatives (Higher Voltage Rating):

1N4007-E3/53, 1N4007-E3/54, and 1N4007E-E3/53 (Vishay): These parts feature 1000 V reverse voltage rating, providing overvoltage margin beyond the EM1B specification. All are Active status and RoHS3 Compliant. Suitable for applications requiring enhanced voltage headroom.

Specialized Alternative (Fast Recovery):

1N4947GP-E3/54 (Vishay SUPERECTIFIER®): Fast recovery diode (≤500ns) with significantly lower reverse leakage (1 µA). Suitable for high-frequency switching applications. Forward voltage is higher (1.3 V), which may impact efficiency in low-voltage circuits.

Compliance and Certification:

All recommended substitutes are RoHS3 Compliant and REACH Unaffected. The EM1B is RoHS Compliant (not RoHS3). All parts share HTSUS code 8541.10.0080 and EAR99 ECCN classification.

Frequently Asked Questions (FAQ)

Q: Can I use a 1N4007 (1000 V) in place of an EM1B (800 V)?

A: Yes. The 1N4007 series has a higher reverse voltage rating (1000 V) and identical current rating (1 A). This provides additional voltage margin and is electrically compatible. However, the application circuit must accommodate the slightly higher forward voltage drop (1.1 V vs. 1.05 V). Use only if the higher voltage rating does not introduce cost or performance penalties.

Q: What is the difference between DO-204AL and DO-41 package designations?

A: DO-204AL and DO-41 refer to the same physical package format—an axial through-hole diode with leads on opposite ends. These designations are equivalent and interchangeable. The EM1B uses "Axial" designation; substitute parts using DO-204AL (DO-41) are mechanically compatible.

Q: Why does the 1N4006RLG show "Not For New Designs" status?

A: This product status indicates the part is in mature phase and may be discontinued. It is suitable only for replacement or legacy system maintenance. For new designs, select from parts with "Active" status: 1N4006-E3/54, 1N4006-E3/73, 1N4006G, or 1N4006G-T.

Q: What is the significance of reverse leakage current differences (20 µA vs. 5 µA)?

A: Reverse leakage current affects power dissipation and circuit performance at high voltages. Lower reverse leakage (5 µA in substitutes vs. 20 µA in EM1B) reduces standby power consumption and heat generation. This is beneficial in battery-powered or thermally constrained applications.

Q: Can I use the 1N4947GP-E3/54 fast recovery diode as a substitute?

A: The 1N4947GP-E3/54 is electrically compatible (800 V, 1 A) but has different recovery characteristics (fast recovery ≤500ns vs. standard >500ns). Use this part only if the application requires fast switching performance. The higher forward voltage (1.3 V) may increase power dissipation in rectification circuits.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed are RoHS3 Compliant or ROHS3 Compliant. The EM1B is RoHS Compliant (not RoHS3). Both compliance levels are acceptable for most applications; verify specific regulatory requirements for your end application.

Q: What is the temperature range consideration when selecting a substitute?

A: The EM1B operates from -40°C to 150°C. Most substitutes extend this range to -55°C or -65°C minimum and up to 175°C maximum. Select parts based on your application's actual operating temperature requirements. Extended range parts provide design margin but may not be necessary for standard industrial applications.

Q: Which substitute has the best availability?

A: The 1N4006G-T (Diodes Incorporated) has the highest inventory at 10,527 pcs. The 1N4006RLG (onsemi) has 62,255 pcs but is marked "Not For New Designs." For new designs, 1N4006G-T is the preferred choice for supply continuity.

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