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EL817(M)(D))-VG Equivalent & Substitute Parts
Part Overview
The EL817(M)(D))-VG is an optoisolator with transistor output manufactured by Everlight Electronics Co Ltd. This component provides 5000Vrms isolation in a 4-DIP through-hole package and is designed for DC input applications requiring galvanic isolation. The part is currently active in production with 858 pieces in stock. Substitute parts are identified based on matching electrical specifications, isolation voltage ratings, output characteristics, and package compatibility to ensure functional equivalence in circuit applications.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Isolation Voltage | 5000Vrms |
| Number of Channels | 1 |
| Output Type | Transistor |
| Current Transfer Ratio (Min) | 300% @ 5mA |
| Current Transfer Ratio (Max) | 600% @ 5mA |
| Voltage - Output (Max) | 80V |
| Current - Output / Channel | 50mA |
| Vce Saturation (Max) | 200mV |
| Operating Temperature Range | -55°C ~ 110°C |
| Package / Case | 4-DIP (0.400", 10.16mm) |
| Mounting Type | Through Hole |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute parts for the EL817(M)(D))-VG are qualified based on the following criteria:
Electrical Compatibility:
- Isolation voltage rating of 5000Vrms or higher
- Single channel configuration
- Transistor output topology
- Maximum output voltage of 80V or greater
- Output current capability of 50mA or greater
- Operating temperature range encompassing -55°C to 110°C
- DC input type
Mechanical Compatibility:
- 4-DIP package format
- Through-hole mounting type
- Pin configuration compatible with standard 4-DIP footprints
Regulatory Compliance:
- RoHS3 compliance or equivalent environmental standards
- MSL rating of 1 (Unlimited)
The substitute parts identified are manufactured by Toshiba Semiconductor and Storage (TLP785 series) and Vishay Semiconductor Opto Division (VO618A series). These manufacturers produce optoisolators meeting the specified electrical and mechanical requirements for direct substitution in applications using the EL817(M)(D))-VG.
Parameter Comparison
| Parameter | EL817(M)(D))-VG | TLP785(GR,F) | TLP785(BL,F) | TLP785(F) | VO618A-4 | VO618A-2 |
|---|---|---|---|---|---|---|
| Manufacturer | Everlight Electronics | Toshiba | Toshiba | Toshiba | Vishay | Vishay |
| Isolation Voltage | 5000Vrms | 5000Vrms | 5000Vrms | 5000Vrms | 5300Vrms | 5300Vrms |
| Number of Channels | 1 | 1 | 1 | 1 | 1 | 1 |
| Current Transfer Ratio (Min) | 300% @ 5mA | 100% @ 5mA | 200% @ 5mA | 50% @ 5mA | 160% @ 1mA | 63% @ 1mA |
| Current Transfer Ratio (Max) | 600% @ 5mA | 300% @ 5mA | 600% @ 5mA | 600% @ 5mA | 320% @ 1mA | 125% @ 1mA |
| Rise / Fall Time (Typ) | 6µs, 8µs | 2µs, 3µs | 2µs, 3µs | 2µs, 3µs | 2µs, 2µs | 2µs, 2µs |
| Voltage - Output (Max) | 80V | 80V | 80V | 80V | 80V | 80V |
| Current - Output / Channel | 50mA | 50mA | 50mA | 50mA | 50mA | 50mA |
| Voltage - Forward (Vf) (Typ) | 1.2V | 1.15V | 1.15V | 1.15V | 1.1V | 1.1V |
| Vce Saturation (Max) | 200mV | 400mV | 400mV | 400mV | 400mV | 400mV |
| Operating Temperature | -55°C ~ 110°C | -55°C ~ 110°C | -55°C ~ 110°C | -55°C ~ 110°C | -55°C ~ 110°C | -55°C ~ 110°C |
| Package / Case | 4-DIP (0.400", 10.16mm) | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| RoHS Status | ROHS3 Compliant | RoHS Compliant | RoHS Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
TLP785(GR,F) - Toshiba Semiconductor and Storage
The TLP785(GR,F) is ROHS3 compliant and maintains the required 5000Vrms isolation voltage. Current transfer ratio range of 100% to 300% @ 5mA provides adequate performance for applications requiring moderate gain. Faster switching characteristics (2µs, 3µs rise/fall time) compared to the EL817(M)(D))-VG enable higher frequency operation. Inventory availability of 3099 pieces supports production requirements. Vce saturation of 400mV is higher than the main part but remains within acceptable limits for most applications.
TLP785(BL,F) - Toshiba Semiconductor and Storage
The TLP785(BL,F) offers current transfer ratio of 200% to 600% @ 5mA, with the upper range matching the EL817(M)(D))-VG specification. RoHS compliant status and 5000Vrms isolation voltage ensure regulatory and electrical compatibility. Switching speed of 2µs, 3µs provides improved performance. High inventory availability of 5999 pieces ensures supply continuity. Vce saturation of 400mV represents the primary electrical difference from the main part.
TLP785(F) - Toshiba Semiconductor and Storage
The TLP785(F) maintains 5000Vrms isolation and ROHS3 compliance. Current transfer ratio range of 50% to 600% @ 5mA encompasses the main part specification. Switching characteristics of 2µs, 3µs enable faster circuit response. Inventory of 2332 pieces is available. The lower minimum current transfer ratio (50%) requires circuit design verification for applications with tight gain requirements.
VO618A-4 - Vishay Semiconductor Opto Division
The VO618A-4 provides 5300Vrms isolation voltage, exceeding the main part requirement. ROHS3 compliant and REACH unaffected status confirm environmental compliance. Current transfer ratio of 160% to 320% @ 1mA (measured at different input current than main part) supports typical isolation applications. Fastest switching characteristics (2µs, 2µs) enable high-speed circuit operation. Highest inventory availability of 12850 pieces ensures supply security. Vce saturation of 400mV is consistent with other Toshiba and Vishay alternatives.
VO618A-2 - Vishay Semiconductor Opto Division
The VO618A-2 provides 5300Vrms isolation voltage with ROHS3 compliance and REACH unaffected status. Current transfer ratio of 63% to 125% @ 1mA is lower than the main part and requires circuit design consideration. Switching speed of 2µs, 2µs matches the VO618A-4. Inventory of 4394 pieces supports production needs. This part is suitable for applications where lower gain is acceptable or where input current can be increased to compensate.
Frequently Asked Questions (FAQ)
Q: Can the TLP785 series directly replace the EL817(M)(D))-VG in existing PCB designs?
A: The TLP785 series maintains electrical compatibility through matching isolation voltage (5000Vrms), output voltage (80V), output current (50mA), and operating temperature range (-55°C to 110°C). However, the package dimensions differ: EL817(M)(D))-VG uses 4-DIP (0.400", 10.16mm) while TLP785 variants use 4-DIP (0.300", 7.62mm). PCB footprint verification is required before substitution. Pin configuration remains compatible for standard 4-DIP layouts.
Q: What is the significance of the current transfer ratio differences between the main part and substitutes?
A: Current transfer ratio determines the output current relative to input current. The EL817(M)(D))-VG specifies 300% to 600% @ 5mA. TLP785(GR,F) provides 100% to 300% @ 5mA, which is lower. TLP785(BL,F) matches the upper range at 600% maximum. VO618A series measurements are taken at 1mA input current rather than 5mA, making direct comparison inappropriate without circuit analysis. Applications requiring specific gain characteristics must verify compatibility with the selected substitute.
Q: Are all substitute parts RoHS compliant?
A: All identified substitutes meet RoHS environmental standards. The EL817(M)(D))-VG and TLP785(F) and VO618A series are ROHS3 compliant. TLP785(GR,F) and TLP785(BL,F) are RoHS compliant. All parts have MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.
Q: How do switching characteristics affect circuit performance?
A: Rise and fall times determine the speed at which the optoisolator responds to input signal changes. The EL817(M)(D))-VG specifies 6µs rise and 8µs fall time. All substitute parts provide faster switching: TLP785 series at 2µs, 3µs and VO618A series at 2µs, 2µs. Faster switching enables operation at higher frequencies but may require circuit design adjustments to prevent signal integrity issues in sensitive applications.
Q: What is the impact of Vce saturation voltage differences?
A: The EL817(M)(D))-VG specifies Vce saturation of 200mV maximum, while all substitutes specify 400mV maximum. This affects output voltage swing and power dissipation in the transistor output stage. Applications with tight output voltage requirements or high current operation must account for the additional voltage drop. In most standard isolation applications, the 400mV saturation voltage remains acceptable.
Q: Which substitute offers the best inventory availability?
A: The VO618A-4 provides the highest inventory with 12850 pieces in stock, followed by TLP785(BL,F) with 5999 pieces. For applications requiring immediate availability or large volume orders, VO618A-4 is the preferred choice. The EL817(M)(D))-VG has 858 pieces available, making substitutes advantageous for supply chain continuity.
Q: Are there any compliance or certification differences between substitutes?
A: All parts are ROHS3 or RoHS compliant. VO618A series additionally carries REACH Unaffected status. All parts share ECCN EAR99 and HTSUS 8541.49.8000 classifications. From a regulatory standpoint, all substitutes are equivalent for standard industrial and commercial applications.
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