EL817(M)(D)-G Equivalent & Substitute Parts

Part Overview

The EL817(M)(D)-G is a 5000Vrms optoisolator with transistor output manufactured by Everlight Electronics Co Ltd. This single-channel 4-DIP component provides galvanic isolation for DC input signals with a maximum output current of 50mA per channel. The part is Active status and RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Substitute parts are necessary when the primary component becomes unavailable, when alternative sourcing improves supply chain resilience, or when design requirements permit operation within the electrical and mechanical parameter ranges of equivalent devices.

Substiute Parts

EL817(M)(D)-G
Everlight Electronics Co LtdIn Stock: 1084EL817(M)(D)-G Datasheet
EL817(M)(D)-G
Current Part
TLP785(BL,F)
Toshiba Semiconductor and StorageIn Stock: 6014TLP785(BL,F) Datasheet
TLP785(BL,F)
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TLP785(F)
Toshiba Semiconductor and StorageIn Stock: 2426TLP785(F) Datasheet
TLP785(F)
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TLP785(GR,F)
Toshiba Semiconductor and StorageIn Stock: 3126TLP785(GR,F) Datasheet
TLP785(GR,F)
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VO618A-2
Vishay Semiconductor Opto DivisionIn Stock: 4441VO618A-2 Datasheet
VO618A-2
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VO618A-4
Vishay Semiconductor Opto DivisionIn Stock: 12873VO618A-4 Datasheet
VO618A-4
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Key Parameters

Parameter Value Unit
Voltage - Isolation 5000 Vrms
Number of Channels 1
Current Transfer Ratio (Min) 300 % @ 5mA
Current Transfer Ratio (Max) 600 % @ 5mA
Voltage - Output (Max) 80 V
Current - Output / Channel 50 mA
Vce Saturation (Max) 200 mV
Operating Temperature Range -55 to 110 °C
Package / Case 4-DIP
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the EL817(M)(D)-G is determined by the following criteria:

Mandatory Compatibility Parameters:

  • Isolation voltage: minimum 5000Vrms
  • Output type: Transistor
  • Number of channels: 1
  • Package type: 4-DIP
  • Mounting type: Through Hole
  • Maximum output voltage: 80V or greater
  • Maximum output current per channel: 50mA or greater
  • Operating temperature range: must encompass -55°C to 110°C

Electrical Performance Parameters:

  • Current Transfer Ratio (CTR) ranges must overlap or exceed the EL817(M)(D)-G specification
  • Vce Saturation must not exceed 200mV for direct drop-in replacement
  • Input type: DC

All substitute parts listed meet or exceed the mandatory compatibility parameters. Variations in secondary parameters such as rise/fall time, forward voltage, and specific CTR ranges are documented to enable informed selection based on application requirements.

Parameter Comparison

Parameter EL817(M)(D)-G TLP785(GR,F) TLP785(BL,F) TLP785(F) VO618A-4 VO618A-2
Manufacturer Everlight Electronics Toshiba Toshiba Toshiba Vishay Vishay
Voltage - Isolation (Vrms) 5000 5000 5000 5000 5300 5300
Number of Channels 1 1 1 1 1 1
CTR Min (@ test current) 300% @ 5mA 100% @ 5mA 200% @ 5mA 50% @ 5mA 160% @ 1mA 63% @ 1mA
CTR Max (@ test current) 600% @ 5mA 300% @ 5mA 600% @ 5mA 600% @ 5mA 320% @ 1mA 125% @ 1mA
Voltage - Output (Max) (V) 80 80 80 80 80 80
Current - Output / Channel (mA) 50 50 50 50 50 50
Vce Saturation (Max) (mV) 200 400 400 400 400 400
Operating Temperature (°C) -55 to 110 -55 to 110 -55 to 110 -55 to 110 -55 to 110 -55 to 110
Package / Case 4-DIP (10.16mm) 4-DIP (7.62mm) 4-DIP (7.62mm) 4-DIP (7.62mm) 4-DIP (7.62mm) 4-DIP (7.62mm)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant RoHS Compliant RoHS Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

TLP785(GR,F) - Toshiba Semiconductor and Storage

This substitute provides 5000Vrms isolation with CTR range of 100% to 300% at 5mA. The narrower CTR range compared to the EL817(M)(D)-G requires circuit design confirmation for applications dependent on higher transfer ratios. Vce saturation of 400mV exceeds the EL817(M)(D)-G specification. RoHS compliant. Active product status. Suitable for applications where CTR minimum of 100% satisfies design requirements.

TLP785(BL,F) - Toshiba Semiconductor and Storage

This substitute provides 5000Vrms isolation with CTR range of 200% to 600% at 5mA, overlapping the upper range of the EL817(M)(D)-G. Vce saturation of 400mV exceeds the EL817(M)(D)-G specification. RoHS compliant. Active product status. Suitable for direct substitution in applications where the 200% minimum CTR is acceptable.

TLP785(F) - Toshiba Semiconductor and Storage

This substitute provides 5000Vrms isolation with CTR range of 50% to 600% at 5mA. The 50% minimum CTR is significantly lower than the EL817(M)(D)-G 300% minimum, requiring circuit design verification. Vce saturation of 400mV exceeds the EL817(M)(D)-G specification. ROHS3 compliant. Active product status. Suitable only for applications with flexible CTR requirements.

VO618A-4 - Vishay Semiconductor Opto Division

This substitute provides 5300Vrms isolation (exceeding the 5000Vrms requirement) with CTR range of 160% to 320% at 1mA test current. Vce saturation of 400mV exceeds the EL817(M)(D)-G specification. ROHS3 compliant with REACH Unaffected status. Active product status. Suitable for applications requiring higher isolation voltage margin.

VO618A-2 - Vishay Semiconductor Opto Division

This substitute provides 5300Vrms isolation (exceeding the 5000Vrms requirement) with CTR range of 63% to 125% at 1mA test current. The lower CTR range requires circuit design verification. Vce saturation of 400mV exceeds the EL817(M)(D)-G specification. ROHS3 compliant with REACH Unaffected status. Active product status. Suitable for applications with flexible CTR requirements and higher isolation voltage margin.

Frequently Asked Questions (FAQ)

Q: Can TLP785(GR,F) directly replace EL817(M)(D)-G in all applications?

A: TLP785(GR,F) meets the mandatory compatibility parameters (5000Vrms isolation, 1 channel, 4-DIP package, 50mA output, -55°C to 110°C operating range). However, the CTR minimum of 100% is lower than the EL817(M)(D)-G minimum of 300%, and Vce saturation is 400mV versus 200mV. Circuit design verification is required to confirm acceptable performance.

Q: What is the significance of the package dimension difference (10.16mm vs 7.62mm)?

A: The EL817(M)(D)-G uses a 4-DIP package with 0.400" (10.16mm) body width, while all substitute parts use 4-DIP packages with 0.300" (7.62mm) body width. Both are through-hole mounted 4-DIP packages with identical pin configurations. The smaller package dimension of substitutes may provide PCB layout advantages but requires verification of footprint compatibility with existing designs.

Q: Why do VO618A-4 and VO618A-2 have different CTR specifications at 1mA instead of 5mA?

A: CTR is measured at different test currents depending on manufacturer specifications. VO618A series specifies CTR at 1mA input current, while EL817(M)(D)-G and TLP785 series specify at 5mA. Direct CTR value comparison requires accounting for the different test conditions. Both VO618A variants meet the mandatory isolation voltage and output current requirements.

Q: Are all substitute parts RoHS3 compliant?

A: TLP785(GR,F) and TLP785(BL,F) are RoHS compliant. TLP785(F), VO618A-4, and VO618A-2 are ROHS3 compliant. The EL817(M)(D)-G is ROHS3 compliant. All parts meet RoHS requirements; ROHS3 represents the current standard.

Q: Which substitute offers the best isolation voltage margin?

A: VO618A-4 and VO618A-2 provide 5300Vrms isolation, exceeding the EL817(M)(D)-G specification of 5000Vrms by 300Vrms. This provides additional safety margin for high-voltage isolation applications.

Q: Can TLP785(F) be used as a substitute despite its 50% minimum CTR?

A: TLP785(F) meets all mandatory compatibility parameters. The 50% minimum CTR is significantly lower than the EL817(M)(D)-G 300% minimum. Use is limited to applications where circuit design accommodates lower transfer ratios or where the application operates in the higher CTR range (up to 600%) where performance overlaps with the primary part.

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