EL817(M)(C)-G Equivalent & Substitute Parts

Part Overview

The EL817(M)(C)-G is a single-channel optoisolator with transistor output manufactured by Everlight Electronics Co Ltd. This component provides 5000Vrms isolation voltage and is designed for DC input applications requiring galvanic isolation in 4-DIP through-hole packages. The part is currently active in production with 888 pieces in stock. Substitute parts are identified based on matching isolation voltage, output type, channel configuration, package form factor, and electrical performance parameters within specified tolerances.

Substiute Parts

EL817(M)(C)-G

Everlight Electronics Co LtdIn Stock: 959EL817(M)(C)-G Datasheet

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TLP785(BL,F)

Toshiba Semiconductor and StorageIn Stock: 6014TLP785(BL,F) Datasheet

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TLP785(F)

Toshiba Semiconductor and StorageIn Stock: 2426TLP785(F) Datasheet

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TLP785(GR,F)

Toshiba Semiconductor and StorageIn Stock: 3126TLP785(GR,F) Datasheet

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VO618A-2

Vishay Semiconductor Opto DivisionIn Stock: 4441VO618A-2 Datasheet

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VO618A-4

Vishay Semiconductor Opto DivisionIn Stock: 12873VO618A-4 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the EL817(M)(C)-G are qualified based on the following criteria:

Primary Matching Criteria:

• Isolation voltage of 5000Vrms or higher
• Single-channel configuration
• Transistor output topology
• DC input type
• Maximum output voltage of 80V or greater
• Maximum output current of 50mA or greater per channel
• 4-DIP through-hole package form factor
• Operating temperature range of -55°C to 110°C or wider
• Active product status

Electrical Performance Parameters:

• Current Transfer Ratio (CTR) at specified test conditions
• Rise and fall times
• Vce saturation voltage
• Forward voltage (Vf) of LED input stage
• Maximum forward current (If)

All identified substitutes meet or exceed the primary matching criteria. Variations in Current Transfer Ratio ranges, switching times, and saturation voltages are within acceptable tolerances for this component category and do not preclude functional equivalence in typical applications.

Parameter Comparison

Engineering Selection Recommendations

TLP785(GR,F) - Toshiba Semiconductor: This substitute is active in production with 3099 pieces in stock. It meets all primary matching criteria with 5000Vrms isolation, single-channel transistor output, and 4-DIP through-hole package. Current Transfer Ratio range of 100% to 300% at 5mA provides moderate performance. RoHS compliance is confirmed. Switching times (3µs on/off, 2µs/3µs rise/fall) are faster than the main part. Vce saturation of 400mV is higher than the EL817(M)(C)-G specification of 200mV.

TLP785(BL,F) - Toshiba Semiconductor: This substitute is active in production with 5999 pieces in stock. It provides 5000Vrms isolation with single-channel transistor output in 4-DIP through-hole configuration. Current Transfer Ratio range of 200% to 600% at 5mA overlaps with the main part minimum specification. RoHS compliance is confirmed. Switching performance (3µs on/off, 2µs/3µs rise/fall) exceeds the main part. Vce saturation of 400mV is higher than the main part.

TLP785(F) - Toshiba Semiconductor: This substitute is active in production with 2332 pieces in stock. It meets all primary matching criteria with 5000Vrms isolation and single-channel transistor output in 4-DIP through-hole package. Current Transfer Ratio range of 50% to 600% at 5mA provides the widest performance envelope. ROHS3 compliance and REACH Unaffected status are confirmed. Switching times (3µs on/off, 2µs/3µs rise/fall) are faster than the main part.

VO618A-4 - Vishay Semiconductor Opto Division: This substitute is active in production with 12850 pieces in stock, the highest inventory level among all substitutes. It provides 5300Vrms isolation, exceeding the main part specification. Single-channel transistor output in 4-DIP through-hole package matches the main part form factor. Current Transfer Ratio of 160% to 320% at 1mA is specified at different test conditions than the main part. ROHS3 compliance and REACH Unaffected status are confirmed. Switching times (3µs on/off, 2µs/2µs rise/fall) are faster than the main part.

VO618A-2 - Vishay Semiconductor Opto Division: This substitute is active in production with 4394 pieces in stock. It provides 5300Vrms isolation, exceeding the main part specification. Single-channel transistor output in 4-DIP through-hole package matches the main part form factor. Current Transfer Ratio of 63% to 125% at 1mA is specified at different test conditions than the main part. ROHS3 compliance and REACH Unaffected status are confirmed. Switching times (3µs on/off, 2µs/2µs rise/fall) are faster than the main part.

Frequently Asked Questions (FAQ)

Q: What are the primary criteria for substituting the EL817(M)(C)-G optoisolator?

A: The EL817(M)(C)-G can be substituted with parts meeting these criteria: 5000Vrms or higher isolation voltage, single-channel configuration, transistor output type, DC input, maximum output voltage of 80V or greater, maximum output current of 50mA or greater, 4-DIP through-hole package, operating temperature range of -55°C to 110°C or wider, and active product status.

Q: Are there package dimension differences between the main part and substitutes?

A: Yes. The EL817(M)(C)-G uses a 4-DIP package with 0.400" (10.16mm) body width. All identified substitutes use 4-DIP packages with 0.300" (7.62mm) body width. Both are through-hole mount types with identical pin configurations. The smaller package dimension of substitutes may require PCB layout verification for clearance and spacing.

Q: How do Current Transfer Ratio specifications differ between the main part and substitutes?

A: Current Transfer Ratio is specified at different test conditions across manufacturers. The EL817(M)(C)-G specifies CTR at 5mA input current (200% to 400%), while VO618A series parts specify CTR at 1mA input current (63% to 320%). TLP785 series parts specify CTR at 5mA input current (50% to 600% depending on variant). These differences reflect different measurement methodologies and do not preclude functional equivalence.

Q: What is the significance of Vce saturation voltage differences?

A: The EL817(M)(C)-G specifies maximum Vce saturation of 200mV, while all identified substitutes specify 400mV maximum. Lower saturation voltage indicates lower output impedance in the saturated state. Applications requiring minimum output voltage drop should account for this 200mV difference when selecting substitutes.

Q: Do all substitutes meet RoHS compliance requirements?

A: All identified substitutes are RoHS compliant. The main part and TLP785(F) and VO618A series are ROHS3 compliant. TLP785(GR,F) and TLP785(BL,F) are RoHS compliant. REACH Unaffected status is confirmed for TLP785(F), VO618A-4, and VO618A-2.

Q: How do switching times compare between the main part and substitutes?

A: The EL817(M)(C)-G specifies rise time of 6µs and fall time of 8µs. All identified substitutes specify faster switching times: rise time of 2µs and fall time of 2µs to 3µs. Faster switching times in substitutes may affect circuit behavior in high-frequency applications and should be evaluated against circuit requirements.

Q: Which substitute has the highest inventory availability?

A: VO618A-4 has the highest inventory with 12850 pieces in stock, followed by TLP785(BL,F) with 5999 pieces, VO618A-2 with 4394 pieces, TLP785(GR,F) with 3099 pieces, and TLP785(F) with 2332 pieces.

Q: Are there isolation voltage differences between the main part and substitutes?

A: The EL817(M)(C)-G specifies 5000Vrms isolation. TLP785 series substitutes also specify 5000Vrms isolation. VO618A series substitutes specify 5300Vrms isolation, which exceeds the main part specification and provides additional isolation margin.