EL817(M)(B)-G Equivalent & Substitute Parts

Part Overview

The EL817(M)(B)-G is an optoisolator with transistor output manufactured by Everlight Electronics Co Ltd. This component provides 5000Vrms isolation in a 4-DIP through-hole package and is designed for DC input applications requiring galvanic isolation. The part is currently active in production with 1020 units in stock. Substitute parts are identified based on matching electrical specifications, isolation voltage ratings, output characteristics, and package compatibility to ensure functional equivalence in circuit applications.

Substiute Parts

EL817(M)(B)-G

Everlight Electronics Co LtdIn Stock: 1070EL817(M)(B)-G Datasheet

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TLP785(BL,F)

Toshiba Semiconductor and StorageIn Stock: 6014TLP785(BL,F) Datasheet

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TLP785(F)

Toshiba Semiconductor and StorageIn Stock: 2426TLP785(F) Datasheet

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TLP785(GR,F)

Toshiba Semiconductor and StorageIn Stock: 3126TLP785(GR,F) Datasheet

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VO618A-2

Vishay Semiconductor Opto DivisionIn Stock: 4441VO618A-2 Datasheet

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VO618A-4

Vishay Semiconductor Opto DivisionIn Stock: 12873VO618A-4 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the EL817(M)(B)-G are qualified based on the following criteria:

Primary Matching Parameters:

• Voltage - Isolation: 5000Vrms or higher
• Number of Channels: 1
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Input Type: DC
• Operating Temperature Range: -55°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 4-DIP

Secondary Considerations:

• Current Transfer Ratio specifications
• Rise / Fall Time characteristics
• Vce Saturation ratings
• Forward voltage characteristics
• RoHS and regulatory compliance status

All identified substitutes meet or exceed the isolation voltage requirement and maintain compatibility with the specified electrical and thermal operating parameters. Package dimensions may vary within the 4-DIP form factor classification.

Parameter Comparison

Engineering Selection Recommendations

TLP785(GR,F) - Toshiba Semiconductor

The TLP785(GR,F) is a direct functional substitute with 5000Vrms isolation matching the EL817(M)(B)-G specification. This part features a narrower Current Transfer Ratio range (100% to 300% @ 5mA) compared to the main part and exhibits faster switching characteristics with 2µs rise time and 3µs fall time. The TLP785(GR,F) is RoHS compliant and maintains the same operating temperature range. Package dimensions are 4-DIP (0.300", 7.62mm), which is more compact than the main part. This substitute is suitable for applications where faster switching performance is acceptable and board space is constrained.

TLP785(BL,F) - Toshiba Semiconductor

The TLP785(BL,F) provides 5000Vrms isolation with a higher Current Transfer Ratio range (200% to 600% @ 5mA), offering improved gain characteristics. This variant features identical switching times to TLP785(GR,F) with 2µs rise and 3µs fall times. The part is RoHS compliant and operates across the same temperature range. The 4-DIP (0.300", 7.62mm) package is more compact than the main part. This substitute is appropriate for applications requiring higher current transfer efficiency.

TLP785(F) - Toshiba Semiconductor

The TLP785(F) maintains 5000Vrms isolation with the widest Current Transfer Ratio specification range (50% to 600% @ 5mA), providing flexibility across different operating conditions. Switching characteristics match other TLP785 variants with 2µs rise and 3µs fall times. This part is ROHS3 compliant with REACH Unaffected status and operates within the specified temperature range. The 4-DIP (0.300", 7.62mm) package is more compact than the main part. This substitute accommodates the broadest range of circuit design requirements.

VO618A-4 - Vishay Semiconductor Opto Division

The VO618A-4 exceeds the isolation voltage requirement at 5300Vrms and provides a Current Transfer Ratio range of 160% to 320% @ 1mA. This part features switching times of 3µs turn-on and 2.3µs turn-off with 2µs rise and 2µs fall times. The VO618A-4 is ROHS3 compliant with REACH Unaffected status and maintains the operating temperature range. The 4-DIP (0.300", 7.62mm) package is more compact than the main part. This substitute is suitable for applications requiring enhanced isolation voltage margin and is available in the highest quantity (12,850 units in stock).

VO618A-2 - Vishay Semiconductor Opto Division

The VO618A-2 provides 5300Vrms isolation with a lower Current Transfer Ratio range (63% to 125% @ 1mA), suitable for applications with lower gain requirements. Switching characteristics include 3µs turn-on and 2.3µs turn-off with 2µs rise and 2µs fall times. This part is ROHS3 compliant with REACH Unaffected status and operates within the specified temperature range. The 4-DIP (0.300", 7.62mm) package is more compact than the main part. This substitute is appropriate for low-gain circuit configurations requiring enhanced isolation voltage.

Frequently Asked Questions (FAQ)

Q: Can the TLP785 series directly replace the EL817(M)(B)-G in existing circuit boards?

A: The TLP785 series maintains electrical compatibility with the EL817(M)(B)-G across all critical parameters including isolation voltage, output voltage, output current, and operating temperature range. However, the TLP785 package dimensions are 4-DIP (0.300", 7.62mm) compared to the EL817(M)(B)-G at 4-DIP (0.400", 10.16mm). Physical board layout verification is required to confirm pin spacing compatibility with existing through-hole footprints.

Q: What is the difference between the TLP785(GR,F), TLP785(BL,F), and TLP785(F) variants?

A: The primary difference among these Toshiba variants is the Current Transfer Ratio specification. TLP785(GR,F) specifies 100% to 300%, TLP785(BL,F) specifies 200% to 600%, and TLP785(F) specifies 50% to 600%. All three maintain identical isolation voltage, output ratings, switching times, and operating temperature range. Selection depends on the required current transfer efficiency for the specific application circuit.

Q: How do the Vishay VO618A-4 and VO618A-2 differ from the Toshiba TLP785 series?

A: The VO618A series provides higher isolation voltage at 5300Vrms compared to the TLP785 series at 5000Vrms. The VO618A-4 and VO618A-2 differ in Current Transfer Ratio specifications, with VO618A-4 at 160% to 320% and VO618A-2 at 63% to 125%. Current Transfer Ratio is measured at 1mA for the VO618A series versus 5mA for the TLP785 series. All parts maintain the same output voltage, output current, and operating temperature specifications.

Q: What is the significance of the Vce Saturation difference between the EL817(M)(B)-G and substitute parts?

A: The EL817(M)(B)-G specifies a maximum Vce Saturation of 200mV, while all substitute parts specify 400mV. This parameter affects the voltage drop across the transistor output in saturation. Applications with tight voltage margin requirements or high-frequency switching may require evaluation of this specification difference. The higher saturation voltage of substitutes results in increased power dissipation in the output transistor.

Q: Are all substitute parts RoHS compliant?

A: All identified substitute parts are RoHS compliant. The EL817(M)(B)-G and TLP785(F) and VO618A series are ROHS3 compliant. The TLP785(GR,F) and TLP785(BL,F) are RoHS compliant. All parts maintain Moisture Sensitivity Level 1 (Unlimited) classification.

Q: Which substitute part offers the best availability?

A: The VO618A-4 offers the highest inventory availability with 12,850 units in stock, followed by TLP785(BL,F) with 5,999 units and VO618A-2 with 4,394 units. The main part EL817(M)(B)-G has 1,020 units available.

Q: Can I use a substitute part with higher isolation voltage than the EL817(M)(B)-G?

A: Yes. The VO618A-4 and VO618A-2 both provide 5300Vrms isolation, which exceeds the 5000Vrms requirement of the EL817(M)(B)-G. Higher isolation voltage provides additional safety margin and is functionally compatible with circuits designed for 5000Vrms isolation.

Q: What are the switching time differences between substitute parts?

A: The TLP785 series (all variants) features faster switching with 2µs rise time and 3µs fall time. The VO618A series specifies 2µs rise time and 2µs fall time. The main part EL817(M)(B)-G specifies 6µs rise time and 8µs fall time. Applications requiring high-frequency switching may benefit from the faster switching characteristics of substitute parts.