EL817(M)(A)-G Equivalent & Substitute Parts

Part Overview

The EL817(M)(A)-G is an optoisolator with transistor output manufactured by Everlight Electronics Co Ltd. This component provides 5000Vrms isolation voltage in a 4-DIP through-hole package and is designed for DC input applications requiring galvanic isolation. The part is currently active in production with 1033 units in stock. Substitute parts are identified based on matching isolation voltage, output type, package configuration, and electrical performance parameters within acceptable operating ranges.

Key Parameters

Parameter	Value
Isolation Voltage	5000Vrms
Number of Channels	1
Output Type	Transistor
Input Type	DC
Maximum Output Voltage	80V
Maximum Output Current	50mA
Package / Case	4-DIP
Mounting Type	Through Hole
Operating Temperature Range	-55°C ~ 110°C
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the EL817(M)(A)-G are qualified based on the following criteria:

Primary Matching Criteria:

Isolation voltage of 5000Vrms or higher
Single-channel transistor output configuration
DC input type
Maximum output voltage of 80V
Maximum output current of 50mA or greater
4-DIP through-hole package
Operating temperature range of -55°C to 110°C or wider

Secondary Considerations:

Current Transfer Ratio (CTR) performance at specified test conditions
Rise and fall time characteristics
Vce saturation voltage
Forward voltage of the LED input stage
Regulatory compliance (RoHS, REACH)

The identified substitutes maintain functional equivalence within these electrical and mechanical boundaries. Differences in CTR ranges, switching times, and saturation voltages reflect manufacturer-specific design variations but do not prevent direct substitution in applications where the EL817(M)(A)-G is specified.

Parameter Comparison

Parameter	EL817(M)(A)-G	TLP785(GR,F)	TLP785(BL,F)	TLP785(F)	VO618A-4	VO618A-2
Manufacturer	Everlight Electronics	Toshiba	Toshiba	Toshiba	Vishay	Vishay
Isolation Voltage	5000Vrms	5000Vrms	5000Vrms	5000Vrms	5300Vrms	5300Vrms
Number of Channels	1	1	1	1	1	1
Output Type	Transistor	Transistor	Transistor	Transistor	Transistor	Transistor
Input Type	DC	DC	DC	DC	DC	DC
Max Output Voltage	80V	80V	80V	80V	80V	80V
Max Output Current	50mA	50mA	50mA	50mA	50mA	50mA
Package / Case	4-DIP (0.400", 10.16mm)	4-DIP (0.300", 7.62mm)	4-DIP (0.300", 7.62mm)	4-DIP (0.300", 7.62mm)	4-DIP (0.300", 7.62mm)	4-DIP (0.300", 7.62mm)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Operating Temperature	-55°C ~ 110°C	-55°C ~ 110°C	-55°C ~ 110°C	-55°C ~ 110°C	-55°C ~ 110°C	-55°C ~ 110°C
CTR Min @ Test Condition	80% @ 5mA	100% @ 5mA	200% @ 5mA	50% @ 5mA	160% @ 1mA	63% @ 1mA
CTR Max @ Test Condition	160% @ 5mA	300% @ 5mA	600% @ 5mA	600% @ 5mA	320% @ 1mA	125% @ 1mA
Rise / Fall Time (Typ)	6µs, 8µs	2µs, 3µs	2µs, 3µs	2µs, 3µs	2µs, 2µs	2µs, 2µs
Vce Saturation (Max)	200mV	400mV	400mV	400mV	400mV	400mV
Forward Voltage (Typ)	1.2V	1.15V	1.15V	1.15V	1.1V	1.1V
RoHS Status	ROHS3 Compliant	RoHS Compliant	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

All identified substitute parts maintain active product status and meet or exceed the electrical specifications of the EL817(M)(A)-G. Selection among substitutes should be based on the following factors:

Regulatory Compliance: All substitute parts carry RoHS compliance certification. TLP785(F) and both VO618A variants (VO618A-4, VO618A-2) are ROHS3 compliant, matching the EL817(M)(A)-G certification level. TLP785(GR,F) and TLP785(BL,F) carry standard RoHS compliance. VO618A-2 and VO618A-4 include REACH Unaffected status.

Package Dimensions: The EL817(M)(A)-G uses a 0.400" (10.16mm) 4-DIP package. All Toshiba TLP785 variants and Vishay VO618A variants use a smaller 0.300" (7.62mm) 4-DIP package. This dimensional difference requires PCB layout verification to confirm mechanical compatibility with existing board designs.

Electrical Performance: The EL817(M)(A)-G specifies CTR of 80-160% at 5mA input. TLP785(GR,F) provides 100-300% CTR at 5mA, offering improved current transfer efficiency. TLP785(BL,F) and TLP785(F) provide higher CTR ranges (200-600% and 50-600% respectively) suitable for applications requiring greater output current capability. VO618A-4 provides 160-320% CTR at 1mA, while VO618A-2 provides 63-125% CTR at 1mA.

Switching Performance: Toshiba TLP785 and Vishay VO618A variants exhibit faster rise and fall times (2-3µs) compared to the EL817(M)(A)-G (6-8µs), enabling higher-frequency switching applications.

Saturation Voltage: The EL817(M)(A)-G specifies maximum Vce saturation of 200mV. All substitute parts specify 400mV maximum saturation. Applications with tight output voltage headroom requirements should account for this 200mV difference.

Inventory Availability: VO618A-4 (12,850 units), TLP785(BL,F) (5,999 units), and VO618A-2 (4,394 units) offer higher stock levels than the EL817(M)(A)-G (1,033 units).

Frequently Asked Questions (FAQ)

Q: Can TLP785(GR,F) directly replace EL817(M)(A)-G in existing PCB designs?

A: Electrical substitution is valid. However, the TLP785(GR,F) uses a 0.300" (7.62mm) 4-DIP package versus the EL817(M)(A)-G 0.400" (10.16mm) package. PCB footprint compatibility must be verified. Pin pitch remains standard 0.100" for both packages, but lead length and body dimensions differ.

Q: What is the significance of the different CTR test conditions (5mA vs 1mA)?

A: Current Transfer Ratio is measured at a specified input LED current. The EL817(M)(A)-G and Toshiba TLP785 variants specify CTR at 5mA input current, while Vishay VO618A variants specify CTR at 1mA. These are manufacturer-specific test conditions and do not indicate functional incompatibility. Application circuits must be designed to operate within the specified input current range of the selected part.

Q: Are the Vishay VO618A-4 and VO618A-2 interchangeable?

A: Both parts share identical electrical and mechanical specifications except for Current Transfer Ratio ranges. VO618A-4 provides 160-320% CTR at 1mA, while VO618A-2 provides 63-125% CTR at 1mA. Selection depends on the required output current gain for the application circuit. They are not interchangeable without circuit analysis.

Q: Why do substitute parts have higher Vce saturation voltage (400mV vs 200mV)?

A: Vce saturation voltage is a transistor output stage characteristic determined by semiconductor design. The EL817(M)(A)-G achieves lower saturation voltage through specific transistor geometry. Applications requiring minimum output voltage drop should account for the 200mV difference when substituting with TLP785 or VO618A variants.

Q: Is the smaller package size of TLP785 and VO618A variants an advantage?

A: Smaller package dimensions (0.300" vs 0.400") reduce PCB footprint area, which is beneficial for space-constrained designs. However, this requires PCB redesign. For existing designs with established footprints, the larger EL817(M)(A)-G package may be preferred to avoid layout modifications.

Q: Do all substitute parts meet the same isolation voltage specification?

A: The EL817(M)(A)-G and all Toshiba TLP785 variants specify 5000Vrms isolation. Vishay VO618A variants specify 5300Vrms isolation, which exceeds the requirement. All parts meet or exceed the 5000Vrms isolation requirement.

Q: What is the impact of faster switching times in substitute parts?

A: Toshiba TLP785 and Vishay VO618A variants exhibit rise/fall times of 2-3µs compared to the EL817(M)(A)-G at 6-8µs. Faster switching enables higher-frequency signal transmission and reduces propagation delay. Applications operating at low frequencies are unaffected; high-frequency applications benefit from improved timing performance.

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