EL816(A)-V Equivalent & Substitute Parts

Part Overview

The EL816(A)-V is an optoisolator with transistor output manufactured by Everlight Electronics Co Ltd. This component provides galvanic isolation up to 5000Vrms with a single channel configuration in a 4-DIP through-hole package. The device is classified as Active product status and is RoHS3 compliant. Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, different packaging formats, or when primary component availability is constrained.

Key Parameters

Parameter	Value
Voltage - Isolation	5000Vrms
Number of Channels	1
Output Type	Transistor
Current Transfer Ratio (Min)	80% @ 5mA
Current Transfer Ratio (Max)	160% @ 5mA
Voltage - Output (Max)	80V
Current - Output / Channel	50mA
Vce Saturation (Max)	200mV
Operating Temperature	-55°C ~ 110°C
Mounting Type	Through Hole
Package / Case	4-DIP (0.300", 7.62mm)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the EL816(A)-V is determined by the following critical parameters:

Isolation Voltage: Substitute parts must maintain minimum 5000Vrms isolation rating. Parts with higher isolation ratings (such as 5300Vrms) are acceptable as they exceed the baseline requirement.

Output Configuration: All substitutes must feature transistor output with single-channel architecture matching the original specification.

Electrical Performance: Substitute parts must support 50mA maximum output current and 80V maximum output voltage. Current transfer ratio ranges may vary provided the minimum specification is met or exceeded.

Package Compatibility: Through-hole mounted 4-DIP packages are directly interchangeable. Surface-mount variants (4-SMD) represent a different mounting technology and require board redesign.

Temperature Range: Operating temperature range of -55°C to 110°C is maintained across all qualified substitutes.

Compliance: RoHS3 compliance is required for all substitute parts.

Parameter Comparison

Parameter	EL816(A)-V	TLP785(F)	TLP785(Y,F)	TLP785(GR-TP6,F)	VO618A-3
Manufacturer	Everlight Electronics	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Vishay Semiconductor Opto
Voltage - Isolation	5000Vrms	5000Vrms	5000Vrms	5000Vrms	5300Vrms
Number of Channels	1	1	1	1	1
Output Type	Transistor	Transistor	Transistor	Transistor	Transistor
Current Transfer Ratio (Min)	80% @ 5mA	50% @ 5mA	50% @ 5mA	100% @ 5mA	100% @ 1mA
Current Transfer Ratio (Max)	160% @ 5mA	600% @ 5mA	150% @ 5mA	300% @ 5mA	200% @ 1mA
Rise / Fall Time (Typ)	4µs, 3µs	2µs, 3µs	2µs, 3µs	2µs, 3µs	2µs, 2µs
Voltage - Output (Max)	80V	80V	80V	80V	80V
Current - Output / Channel	50mA	50mA	50mA	50mA	50mA
Voltage - Forward (Vf) (Typ)	1.2V	1.15V	1.15V	1.15V	1.1V
Vce Saturation (Max)	200mV	400mV	400mV	400mV	400mV
Operating Temperature	-55°C ~ 110°C	-55°C ~ 110°C	-55°C ~ 110°C	-55°C ~ 110°C	-55°C ~ 110°C
Mounting Type	Through Hole	Through Hole	Through Hole	Surface Mount	Through Hole
Package / Case	4-DIP (0.300", 7.62mm)	4-DIP (0.300", 7.62mm)	4-DIP (0.300", 7.62mm)	4-SMD, Gull Wing	4-DIP (0.300", 7.62mm)
RoHS Status	ROHS3 Compliant	RoHS Compliant	RoHS Compliant	RoHS Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Direct Pin-Compatible Substitutes (Through-Hole 4-DIP):

TLP785(F), TLP785(Y,F), and VO618A-3 are direct mechanical and electrical substitutes for the EL816(A)-V in through-hole applications. These parts maintain identical package geometry, pin configuration, and mounting footprint. All three alternatives are Active status products with full RoHS compliance. The TLP785(GR-TP6,F) variant is not recommended for direct substitution due to surface-mount packaging, which requires PCB redesign and different assembly processes.

Isolation Voltage Consideration:

The VO618A-3 provides 5300Vrms isolation, exceeding the 5000Vrms baseline. This higher rating does not create incompatibility and may be selected when enhanced isolation margin is required by system design specifications.

Saturation Voltage Differences:

The EL816(A)-V specifies 200mV maximum Vce saturation, while all Toshiba TLP785 variants and the Vishay VO618A-3 specify 400mV. This 200mV difference must be evaluated in applications where output voltage drop directly impacts system performance or signal integrity.

Current Transfer Ratio Variation:

The EL816(A)-V minimum current transfer ratio is 80% at 5mA. The TLP785(F) and TLP785(Y,F) specify 50% minimum, representing a lower bound. The TLP785(GR-TP6,F) and VO618A-3 specify 100% minimum, providing higher transfer efficiency. Applications requiring specific current transfer characteristics must verify compatibility with the selected substitute.

Switching Speed:

The EL816(A)-V rise and fall times are 4µs and 3µs respectively. All substitute parts offer equal or faster switching performance (2µs rise time minimum), making them suitable for applications with timing-critical requirements.

Frequently Asked Questions (FAQ)

Q: Can TLP785(GR-TP6,F) be used as a direct replacement for EL816(A)-V?

A: No. The TLP785(GR-TP6,F) uses surface-mount 4-SMD packaging with gull-wing leads, while the EL816(A)-V uses through-hole 4-DIP packaging. Direct substitution requires identical mounting technology. PCB redesign and reflow soldering processes are necessary for surface-mount variants.

Q: What is the significance of the higher 5300Vrms isolation rating in VO618A-3?

A: The VO618A-3 isolation voltage exceeds the EL816(A)-V specification by 300Vrms. This higher rating provides additional safety margin in high-voltage isolation applications. The part is electrically compatible and can be substituted without circuit modification.

Q: How does the 200mV difference in Vce saturation between EL816(A)-V and substitute parts affect circuit design?

A: The EL816(A)-V specifies 200mV maximum saturation voltage, while TLP785 and VO618A-3 variants specify 400mV. In applications where the output transistor drives low-impedance loads or where output voltage drop is critical to system performance, this difference must be evaluated. The higher saturation voltage of substitute parts results in greater voltage drop across the output transistor.

Q: Are all substitute parts RoHS compliant?

A: Yes. The EL816(A)-V is ROHS3 compliant. TLP785(F), TLP785(Y,F), and VO618A-3 are RoHS compliant. The TLP785(GR-TP6,F) is RoHS compliant. All parts meet environmental compliance requirements for restricted substance use.

Q: What is the difference between TLP785(F) and TLP785(Y,F)?

A: Both parts use identical 4-DIP through-hole packaging and share the same 5000Vrms isolation rating. The primary difference is the current transfer ratio specification. TLP785(F) specifies 50-600% CTR range, while TLP785(Y,F) specifies 50-150% CTR range. The TLP785(Y,F) represents a tighter, more controlled transfer ratio specification suitable for applications requiring predictable gain characteristics.

Q: Can the EL816(A)-V be substituted with any of these parts without circuit modification?

A: Direct substitution without circuit modification is limited to through-hole 4-DIP packages: TLP785(F), TLP785(Y,F), and VO618A-3. These parts maintain identical pin configuration and footprint. However, the higher Vce saturation voltage (400mV vs. 200mV) in substitute parts must be evaluated for impact on output voltage levels and load current requirements. The TLP785(GR-TP6,F) surface-mount variant requires PCB redesign and cannot be substituted without circuit modification.

Q: What inventory levels are available for each substitute part?

A: Current inventory levels are: TLP785(F) 2332 pcs, TLP785(Y,F) 966 pcs, TLP785(GR-TP6,F) 13874 pcs, and VO618A-3 5365 pcs. The TLP785(GR-TP6,F) surface-mount variant has the highest inventory availability.

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