EGP30G Equivalent & Substitute Parts

Part Overview

The EGP30G is a general-purpose rectifier diode manufactured by onsemi, rated for 400 V DC reverse voltage and 3 A average rectified current. The device is packaged in DO-201AD (axial) configuration for through-hole mounting applications. The EGP30G is classified as "Not For New Designs," indicating it is an established product no longer recommended for new circuit development. Identification of equivalent and substitute parts is necessary for legacy system maintenance, repair, and component sourcing when the primary part becomes unavailable.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	400	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 3 A	V
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 400 V
Mounting Type	Through Hole	-
Package / Case	DO-201AD, Axial	-
Operating Temperature - Junction	-65 to 150	°C
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the EGP30G is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Voltage - DC Reverse (Vr) (Max): 400 V minimum
Current - Average Rectified (Io): 3 A minimum
Voltage - Forward (Vf) (Max) @ If: Must not exceed application requirements
Reverse Recovery Time (trr): Fast recovery characteristics preferred for switching applications
Current - Reverse Leakage @ Vr: Low leakage preferred for precision circuits

Mechanical Compatibility Criteria:

Mounting Type: Through Hole (required for legacy PCB compatibility)
Package / Case: DO-201AD or equivalent axial packages (DO-201AA, DO-27)
Operating Temperature Range: Must encompass application requirements

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (Fast Recovery, ≤500ns): Parts with matching fast recovery characteristics and identical electrical ratings. These include MR854G, MR854RLG, and 1N5418-TAP.

Category B - Functional Equivalents (Standard Recovery, >500ns): Parts with standard recovery characteristics but matching voltage and current ratings. These include 1N5404G, 1N5404RLG, 1N5404-E3/54, 1N5404-E3/73, 1N5404-G, and 1N5404GP-AP. These parts are suitable for non-switching applications where recovery speed is not critical.

Category C - Avalanche Technology Variants: Parts utilizing avalanche technology with matching voltage and current ratings. These include 1N5418-TAP and 1N5625-TAP, suitable for applications requiring avalanche protection.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [V]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Status
EGP30G	onsemi	400	3	1.25 @ 3A	Fast Recovery ≤500ns	50	5 @ 400V	DO-201AD	-65 to 150	Not For New Designs
1N5404G	onsemi	400	3	1.0 @ 3A	Standard Recovery >500ns	-	10 @ 400V	DO-201AA, DO-27	-65 to 150	Not For New Designs
1N5404RLG	onsemi	400	3	1.0 @ 3A	Standard Recovery >500ns	-	10 @ 400V	DO-201AA, DO-27	-65 to 150	Not For New Designs
MR854G	onsemi	400	3	1.25 @ 3A	Fast Recovery ≤500ns	300	10 @ 400V	DO-201AA, DO-27	-65 to 125	Active
MR854RLG	onsemi	400	3	1.25 @ 3A	Fast Recovery ≤500ns	300	10 @ 400V	DO-201AA, DO-27	-65 to 125	Active
1N5404-E3/54	Vishay General Semiconductor - Diodes Division	400	3	1.2 @ 3A	Standard Recovery >500ns	-	5 @ 400V	DO-201AD	-50 to 150	Active
1N5404-E3/73	Vishay General Semiconductor - Diodes Division	400	3	1.2 @ 3A	Standard Recovery >500ns	-	5 @ 400V	DO-201AD	-50 to 150	Active
1N5404-G	Comchip Technology	400	3	0.95 @ 3A	Standard Recovery >500ns	-	5 @ 400V	DO-201AD	-65 to 125	Active
1N5404GP-AP	Micro Commercial Co	400	3	1.1 @ 3A	Standard Recovery >500ns	-	5 @ 400V	DO-201AD	-55 to 150	Active
1N5418-TAP	Vishay General Semiconductor - Diodes Division	400	3	1.5 @ 9A	Fast Recovery ≤500ns	100	1 @ 200V	SOD-64	-55 to 175	Active
1N5625-TAP	Vishay General Semiconductor - Diodes Division	400	3	1.0 @ 3A	Standard Recovery >500ns	7500	1 @ 200V	SOD-64	-55 to 175	Active

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

MR854G and MR854RLG are the primary substitutes for EGP30G. Both parts maintain fast recovery characteristics (≤500ns) with matching 400 V / 3 A ratings and are classified as Active products. MR854RLG offers higher inventory availability (29,000 pcs) compared to MR854G (692 pcs). Both parts are ROHS3 compliant and REACH unaffected. The operating temperature range is reduced to -65°C to 125°C compared to EGP30G's -65°C to 150°C; this difference must be evaluated against application requirements.

For Standard Recovery Applications:

The 1N5404 series (1N5404G, 1N5404RLG, 1N5404-E3/54, 1N5404-E3/73, 1N5404-G, 1N5404GP-AP) provides functional equivalence for applications where fast recovery is not required. These parts are rated 400 V / 3 A with standard recovery characteristics (>500ns). Multiple manufacturers are represented, including onsemi, Vishay General Semiconductor - Diodes Division, and Comchip Technology. All variants are ROHS3 compliant and REACH unaffected. The 1N5404-G variant (Comchip Technology) offers the highest inventory availability (208,868 pcs) and lowest forward voltage (950 mV @ 3 A).

For Avalanche-Protected Applications:

1N5418-TAP and 1N5625-TAP utilize avalanche technology and are rated 400 V / 3 A. Both are packaged in SOD-64 (axial) configuration and are Active products. 1N5418-TAP provides fast recovery (100 ns) with extended temperature range (-55°C to 175°C). 1N5625-TAP provides standard recovery with extended temperature range. Package compatibility must be verified for PCB mounting.

Compliance and Certification:

All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the compliance status of EGP30G. All parts carry ECCN EAR99 and HTSUS 8541.10.0080 classifications.

Frequently Asked Questions (FAQ)

Q: Can 1N5404G be used as a direct replacement for EGP30G?

A: 1N5404G meets the voltage (400 V) and current (3 A) requirements of EGP30G. However, 1N5404G uses standard recovery (>500ns) compared to EGP30G's fast recovery (≤500ns). Substitution is valid for applications where switching speed is not critical. Forward voltage is lower (1.0 V vs. 1.25 V), which may affect circuit performance in precision applications.

Q: What is the difference between MR854G and MR854RLG?

A: MR854G and MR854RLG are electrically identical, both rated 400 V / 3 A with fast recovery (≤500ns) and 300 ns reverse recovery time. The primary difference is inventory availability: MR854RLG has 29,000 pcs in stock compared to 692 pcs for MR854G. Both are Active products and ROHS3 compliant.

Q: Are the 1N5404-E3/54 and 1N5404-E3/73 variants interchangeable?

A: Yes, 1N5404-E3/54 and 1N5404-E3/73 are electrically identical, both manufactured by Vishay General Semiconductor - Diodes Division. Both are rated 400 V / 3 A with standard recovery and 1.2 V forward voltage @ 3 A. The primary difference is inventory availability: 1N5404-E3/73 has 29,092 pcs in stock compared to 1,690 pcs for 1N5404-E3/54. Both are Active products.

Q: Can SOD-64 packaged diodes (1N5418-TAP, 1N5625-TAP) replace DO-201AD packaged diodes?

A: SOD-64 and DO-201AD are different physical packages. Both are axial through-hole configurations, but SOD-64 has different lead spacing and dimensions. Physical compatibility with PCB mounting holes and circuit board layout must be verified before substitution. Electrical ratings are compatible (400 V / 3 A), but mechanical fit is not guaranteed.

Q: Why does EGP30G have a lower reverse leakage current (5 µA) than MR854G (10 µA)?

A: Reverse leakage current is a manufacturing characteristic that varies between product lines and manufacturers. Both values are within acceptable ranges for general-purpose rectifier applications. The difference does not prevent substitution but should be considered in precision analog circuits where leakage current affects circuit performance.

Q: What is the significance of "Not For New Designs" status on EGP30G?

A: "Not For New Designs" indicates that onsemi no longer recommends EGP30G for new circuit development. The part remains available for legacy system support and repair. For new designs, Active-status alternatives such as MR854RLG, 1N5404-E3/73, or 1N5404-G are recommended.

Q: How does forward voltage affect substitution decisions?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. EGP30G has Vf of 1.25 V @ 3 A, while 1N5404-G has 0.95 V @ 3 A. In power supply circuits, lower forward voltage reduces heat dissipation and improves efficiency. In precision rectifier circuits, forward voltage affects output voltage accuracy. Substitution is valid only if the application tolerates the voltage difference.

Q: Are all substitute parts ROHS3 compliant?

A: Yes, all substitute parts listed in this reference are ROHS3 compliant and REACH unaffected, matching the compliance status of EGP30G. This ensures compatibility with environmental and regulatory requirements.

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