EGP30D-TP Equivalent & Substitute Parts

Part Overview

The EGP30D-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-201AE axial through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The diode features fast recovery characteristics with a reverse recovery time of 50 ns, suitable for applications requiring rapid switching performance.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	200 V
Current - Average Rectified (Io)	3 A
Voltage - Forward (Vf) (Max) @ If	1 V @ 3 A
Speed Classification	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr)	50 ns
Current - Reverse Leakage @ Vr	5 µA @ 200 V
Mounting Type	Through Hole
Package / Case	DO-201AE, Axial
Operating Temperature - Junction	-55°C ~ 150°C
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the EGP30D-TP is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 200 V minimum
Current - Average Rectified (Io): 3 A minimum
Mounting Type: Through Hole
Package compatibility: DO-201 series or equivalent axial packages

Secondary Compatibility Factors:

Forward voltage drop (Vf) at rated current
Recovery speed classification (Fast Recovery vs. Standard Recovery)
Reverse recovery time (trr)
Reverse leakage current
Operating temperature range
Product status and compliance certifications

Substitute parts are grouped into two categories: Direct Replacements (matching DO-201AD package with equivalent electrical performance) and Functional Equivalents (alternative axial packages such as SOD-64 with matching voltage and current ratings).

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf @ If	Speed	trr	Package	Status
EGP30D-TP	Micro Commercial Co	200 V	3 A	1 V @ 3 A	Fast Recovery ≤ 500 ns	50 ns	DO-201AE	Obsolete
1N5402-E3/54	Vishay General Semiconductor	200 V	3 A	1.2 V @ 3 A	Standard Recovery > 500 ns	—	DO-201AD	Active
1N5402-E3/73	Vishay General Semiconductor	200 V	3 A	1.2 V @ 3 A	Standard Recovery > 500 ns	—	DO-201AD	Active
1N5406RLG	onsemi	600 V	3 A	1 V @ 3 A	Standard Recovery > 500 ns	—	DO-201AA / DO-27	Not For New Designs
1N5624-TAP	Vishay General Semiconductor	200 V	3 A	1 V @ 3 A	Standard Recovery > 500 ns	7.5 µs	SOD-64	Active
BY251P-E3/73	Vishay General Semiconductor	200 V	3 A	1.1 V @ 3 A	Standard Recovery > 500 ns	3 µs	DO-201AD	Active
BYW72-TR	Vishay General Semiconductor	200 V	3 A	1.1 V @ 3 A	Fast Recovery ≤ 500 ns	200 ns	SOD-64	Active
BYW82-TR	Vishay General Semiconductor	200 V	3 A	1 V @ 3 A	Standard Recovery > 500 ns	7.5 µs	SOD-64	Active
GI502-E3/54	Vishay General Semiconductor	200 V	3 A	1.1 V @ 9.4 A	Standard Recovery > 500 ns	2 µs	DO-201AD	Active
GP30D-E3/54	Vishay General Semiconductor	200 V	3 A	1.1 V @ 3 A	Standard Recovery > 500 ns	5 µs	DO-201AD	Active
GP30D-E3/73	Vishay General Semiconductor	200 V	3 A	1.1 V @ 3 A	Standard Recovery > 500 ns	5 µs	DO-201AD	Active

Engineering Selection Recommendations

Direct Package Replacements (DO-201AD):

The following parts provide direct mechanical and electrical compatibility with the EGP30D-TP in DO-201AD axial packages:

1N5402-E3/54 and 1N5402-E3/73: Active status, ROHS3 compliant, standard recovery characteristics. Forward voltage is 1.2 V at 3 A, representing a 0.2 V increase over the EGP30D-TP. Suitable for applications where recovery speed is not critical.
BY251P-E3/73: Active status, ROHS3 compliant, forward voltage 1.1 V at 3 A. Reverse recovery time of 3 µs indicates slower switching than the EGP30D-TP but faster than 1N5402 variants.
GI502-E3/54: Active status, ROHS3 compliant, forward voltage 1.1 V at 3 A. Reverse recovery time of 2 µs provides intermediate switching performance.
GP30D-E3/54 and GP30D-E3/73: Active status, ROHS3 compliant, SUPERECTIFIER® series, forward voltage 1.1 V at 3 A. Extended operating temperature range to 175°C. Reverse recovery time of 5 µs.

Alternative Package Options (SOD-64):

BYW72-TR: Active status, ROHS3 compliant, avalanche technology, fast recovery ≤ 500 ns with 200 ns reverse recovery time. Matches the EGP30D-TP recovery speed classification. Operating temperature range extends to 175°C.
BYW82-TR: Active status, ROHS3 compliant, avalanche technology, standard recovery > 500 ns with 7.5 µs reverse recovery time. Forward voltage 1 V at 3 A matches the EGP30D-TP specification.
1N5624-TAP: Active status, ROHS3 compliant, avalanche technology, forward voltage 1 V at 3 A. Reverse recovery time of 7.5 µs. Extended operating temperature range to 175°C.

Parts Not Recommended for New Designs:

1N5406RLG: Rated for 600 V reverse voltage, exceeding the 200 V requirement. Product status is "Not For New Designs," limiting long-term availability and support.

Frequently Asked Questions (FAQ)

Q: Can I use a 600 V rated diode (1N5406RLG) as a substitute for the 200 V EGP30D-TP?

A: While the 1N5406RLG meets the 3 A current requirement and through-hole mounting specification, it is rated for 600 V reverse voltage, which exceeds the 200 V requirement of the EGP30D-TP. The higher voltage rating does not provide functional benefit in a 200 V application and introduces unnecessary cost and size considerations. Additionally, the 1N5406RLG is classified as "Not For New Designs," limiting procurement viability. Direct 200 V rated substitutes are preferred.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to the reverse recovery time (trr), which is the time required for a diode to transition from conducting to blocking state. The EGP30D-TP features fast recovery with trr of 50 ns. Standard recovery diodes have trr values exceeding 500 ns. Fast recovery diodes are essential in high-frequency switching applications, while standard recovery diodes are suitable for lower-frequency rectification. Selection depends on circuit switching frequency requirements.

Q: Are DO-201AD and DO-201AE packages interchangeable?

A: DO-201AD and DO-201AE are both axial through-hole packages with similar physical dimensions and lead configurations. They are mechanically interchangeable in most applications. However, verify specific PCB footprint requirements and lead diameter specifications for your design to ensure compatibility.

Q: Can I substitute a SOD-64 package diode for a DO-201AE package diode?

A: SOD-64 and DO-201AE are different axial package formats with distinct physical dimensions and lead configurations. Direct mechanical substitution is not possible without PCB redesign. However, SOD-64 alternatives such as BYW72-TR and BYW82-TR provide equivalent electrical performance and can be used if the PCB layout is modified to accommodate the different package geometry.

Q: What does ROHS3 compliance mean?

A: ROHS3 compliance indicates conformance to the Restriction of Hazardous Substances Directive 2011/65/EU, which restricts the use of specific hazardous materials including lead, cadmium, mercury, and certain brominated flame retardants in electrical and electronic equipment. All substitute parts listed are ROHS3 compliant, ensuring environmental and regulatory compatibility.

Q: Why is the EGP30D-TP classified as obsolete?

A: Obsolete status indicates that the manufacturer has discontinued production and no longer provides technical support or warranty coverage. Active substitute parts ensure access to current manufacturing processes, quality assurance, and long-term availability for ongoing production and field service requirements.

Q: How do I select between multiple active substitutes?

A: Selection criteria include: (1) Package compatibility with existing PCB design (DO-201AD for direct replacement, SOD-64 for alternative layouts); (2) Recovery speed requirements (fast recovery for high-frequency applications, standard recovery for low-frequency rectification); (3) Forward voltage drop impact on circuit efficiency; (4) Operating temperature range requirements; (5) Reverse leakage current specifications for low-current applications. Consult application-specific circuit requirements and thermal management considerations.

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