EGP30D Equivalent & Substitute Parts

Part Overview

The EGP30D is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This device features fast recovery characteristics with a reverse recovery time of 50 ns, making it suitable for standard rectification applications requiring moderate switching speeds.

The EGP30D carries a "Not For New Designs" product status, indicating that onsemi has discontinued active development and support for this component. This status necessitates identification of equivalent and substitute parts to ensure design continuity, supply chain reliability, and access to components with active manufacturer support and current production availability.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 3 A	mV
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Mounting Type	Through Hole	-
Package / Case	DO-201AD, Axial	-
Operating Temperature - Junction	-65 to 150	°C
Technology	Standard	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the EGP30D is determined by strict electrical and mechanical compatibility criteria. The following parameters must be matched or exceeded in substitute components:

Critical Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 200 V minimum
Current - Average Rectified (Io): 3 A minimum
Mounting Type: Through Hole
Package / Case: DO-201AD or equivalent axial package (DO-27, SOD-64)

Performance Considerations:

Forward voltage (Vf) at rated current must not exceed application requirements
Reverse recovery time (trr) and speed classification determine switching performance suitability
Reverse leakage current affects circuit performance in high-impedance applications
Operating temperature range must accommodate application thermal requirements

Substitute parts are grouped into two categories based on package type and recovery characteristics:

Group 1: DO-201AD Axial Package (Direct Package Substitutes) Parts maintaining the original DO-201AD axial form factor with equivalent or superior electrical performance. These include 1N5402G, 1N5402RLG, 1N5402-E3/54, 1N5402-G, and BY251P-E3/73.

Group 2: SOD-64 Axial Package (Alternative Package Substitutes) Parts with equivalent electrical ratings but housed in SOD-64 axial packages. These include 1N5417-TAP, 1N5624-TAP, BYM36A-TAP, and BYT56D-TAP. These require mechanical board layout accommodation for the different package footprint.

Non-Substitutable Part: BAS21E6327HTSA1 is excluded from substitution consideration due to surface-mount packaging (SOT-23) and significantly reduced current rating (250 mA versus 3 A), making it incompatible with the through-hole, 3 A application requirements of the EGP30D.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Product Status
EGP30D	onsemi	200	3	950 @ 3A	Fast Recovery ≤ 500ns	50	5 @ 200V	DO-201AD	Not For New Designs
1N5402G	Taiwan Semiconductor Corporation	200	3	1000 @ 3A	Standard Recovery > 500ns	-	5 @ 200V	DO-201AD	Active
1N5402RLG	onsemi	200	3	1000 @ 3A	Standard Recovery > 500ns	-	10 @ 200V	DO-201AA / DO-27	Not For New Designs
1N5402-E3/54	Vishay General Semiconductor - Diodes Division	200	3	1200 @ 3A	Standard Recovery > 500ns	-	5 @ 200V	DO-201AD	Active
1N5402-G	Comchip Technology	200	3	1000 @ 3A	Standard Recovery > 500ns	-	5 @ 200V	DO-201AD	Active
1N5417-TAP	Vishay General Semiconductor - Diodes Division	200	3	1500 @ 9A	Fast Recovery ≤ 500ns	100	1 @ 200V	SOD-64	Active
1N5624-TAP	Vishay General Semiconductor - Diodes Division	200	3	1000 @ 3A	Standard Recovery > 500ns	7500	1 @ 200V	SOD-64	Active
BY251P-E3/73	Vishay General Semiconductor - Diodes Division	200	3	1100 @ 3A	Standard Recovery > 500ns	3000	5 @ 200V	DO-201AD	Active
BYM36A-TAP	Vishay General Semiconductor - Diodes Division	200	3	1600 @ 3A	Fast Recovery ≤ 500ns	100	5 @ 200V	SOD-64	Active
BYT56D-TAP	Vishay General Semiconductor - Diodes Division	200	3	1400 @ 3A	Fast Recovery ≤ 500ns	100	5 @ 200V	SOD-64	Active

Engineering Selection Recommendations

For Direct Package Replacement (DO-201AD Axial):

1N5402-E3/54 (Vishay General Semiconductor - Diodes Division) is the primary recommended substitute. This part maintains the DO-201AD axial package, meets all voltage and current requirements, and carries Active product status with current manufacturing support. RoHS3 compliance and REACH unaffected status align with the EGP30D compliance profile.

1N5402-G (Comchip Technology) provides an alternative with Active status and equivalent electrical performance in the DO-201AD package. This part is suitable where Comchip Technology supply chain relationships are established.

1N5402G (Taiwan Semiconductor Corporation) offers Active status and DO-201AD packaging. Forward voltage specification (1000 mV @ 3A) is marginally higher than the EGP30D (950 mV @ 3A), requiring verification that application thermal and performance margins accommodate this difference.

BY251P-E3/73 (Vishay General Semiconductor - Diodes Division) maintains DO-201AD packaging and Active status. The extended reverse recovery time (3 µs) indicates slower switching characteristics compared to the EGP30D (50 ns), making this part suitable only for applications where switching speed is not performance-critical.

For Alternative Package Substitution (SOD-64 Axial):

1N5417-TAP (Vishay General Semiconductor - Diodes Division) provides Active status with fast recovery characteristics (100 ns trr) and reduced reverse leakage (1 µA @ 200V). The SOD-64 package requires board layout modification. Forward voltage specification (1500 mV @ 9A) is measured at higher current than the EGP30D rating, limiting direct comparison.

BYT56D-TAP (Vishay General Semiconductor - Diodes Division) offers Active status with fast recovery performance (100 ns trr) in SOD-64 packaging. Forward voltage (1400 mV @ 3A) exceeds the EGP30D specification, requiring thermal margin verification.

BYM36A-TAP (Vishay General Semiconductor - Diodes Division) provides Active status with fast recovery characteristics (100 ns trr) and SOD-64 packaging. Forward voltage specification (1600 mV @ 3A) is the highest among available substitutes, requiring confirmation that application thermal design accommodates increased power dissipation.

1N5624-TAP (Vishay General Semiconductor - Diodes Division) carries Active status but exhibits significantly extended reverse recovery time (7.5 µs), indicating slow switching performance unsuitable for applications requiring the EGP30D's fast recovery characteristics.

Compliance Considerations:

All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the EGP30D. Moisture sensitivity levels (MSL 1 - Unlimited) on active substitutes provide superior handling flexibility compared to the EGP30D (Not Applicable).

Frequently Asked Questions (FAQ)

Q: Can I directly replace EGP30D with 1N5402-E3/54 without board modifications?

A: Yes. The 1N5402-E3/54 maintains the DO-201AD axial package, identical mounting type (through-hole), and equivalent electrical ratings (200 V, 3 A). No board layout changes are required. The part is manufactured by Vishay General Semiconductor - Diodes Division with Active product status and current production availability.

Q: What is the difference between "Fast Recovery" and "Standard Recovery" speed classifications?

A: Fast Recovery diodes exhibit reverse recovery time (trr) of 500 ns or less, enabling faster switching transitions and reduced switching losses in high-frequency applications. Standard Recovery diodes have trr exceeding 500 ns, resulting in slower switching transitions. The EGP30D specifies Fast Recovery (50 ns trr). Substitutes with Standard Recovery classification (1N5402G, 1N5402-E3/54, 1N5402-G, BY251P-E3/73, 1N5624-TAP) are suitable only for applications where switching speed is not performance-critical.

Q: Why is BAS21E6327HTSA1 not listed as a substitute?

A: BAS21E6327HTSA1 is incompatible with EGP30D applications for two critical reasons: (1) Current rating of 250 mA is insufficient for the EGP30D's 3 A specification, and (2) Surface-mount SOT-23 packaging is incompatible with through-hole board designs. This part serves different application categories and cannot substitute for the EGP30D.

Q: What are the implications of higher forward voltage in substitute parts?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. Higher Vf values result in increased power dissipation (P = Vf × I). For example, 1N5402-E3/54 (1200 mV @ 3A) dissipates 3.6 W compared to EGP30D (950 mV @ 3A) dissipating 2.85 W. Applications with limited thermal capacity or tight power budgets require verification that heatsinking and thermal design accommodate the increased dissipation.

Q: Can I use SOD-64 package substitutes (1N5417-TAP, BYM36A-TAP, BYT56D-TAP, 1N5624-TAP) as direct replacements?

A: SOD-64 package substitutes require board layout modification. The SOD-64 axial package has different physical dimensions and lead spacing compared to DO-201AD. Mechanical compatibility with existing board holes, lead routing, and component spacing must be verified before implementation. Electrical performance is equivalent when package accommodation is feasible.

Q: Which substitute offers the lowest reverse leakage current?

A: 1N5417-TAP and 1N5624-TAP both specify 1 µA @ 200V reverse leakage, compared to the EGP30D's 5 µA @ 200V. Lower reverse leakage reduces circuit loading in high-impedance applications and improves performance in precision analog circuits. Both parts carry Active status and are available from Vishay General Semiconductor - Diodes Division.

Q: What does "Not For New Designs" product status mean for the EGP30D?

A: "Not For New Designs" indicates that onsemi has discontinued active development, manufacturing optimization, and long-term supply commitment for the EGP30D. While existing inventory may be available, future availability is not guaranteed. New designs should incorporate substitute parts with Active status to ensure supply chain continuity and access to current manufacturing support.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts carry RoHS3 compliance certification, matching the EGP30D's regulatory status. REACH unaffected status is maintained across all substitutes, ensuring compliance with European chemical regulations.

Q: How do I select between multiple Active status substitutes?

A: Selection depends on application-specific requirements: (1) For direct package replacement without board modifications, select 1N5402-E3/54 or 1N5402-G (DO-201AD package). (2) For applications requiring fast recovery performance, select 1N5417-TAP or BYT56D-TAP (SOD-64 package, 100 ns trr). (3) For applications with low reverse leakage requirements, select 1N5417-TAP or 1N5624-TAP (1 µA @ 200V). (4) Verify forward voltage specifications against application thermal design to confirm power dissipation margins.

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