EGP30B-TP Equivalent & Substitute Parts

Part Overview

The EGP30B-TP is a general-purpose rectifier diode rated for 100 V DC reverse voltage and 3 A average rectified current in a through-hole DO-201AE axial package. Manufactured by Micro Commercial Co, this component is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for ongoing design support, production continuity, and component sourcing.

Substiute Parts

EGP30B-TP
Micro Commercial CoIn Stock: 1159EGP30B-TP Datasheet
EGP30B-TP
Current Part
1N5401-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 620481N5401-E3/54 Datasheet
1N5401-E3/54
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1N5401-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 166271N5401-E3/73 Datasheet
1N5401-E3/73
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1N5401G
Good-Ark SemiconductorIn Stock: 14161N5401G Datasheet
1N5401G
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EGP30A
Fairchild SemiconductorIn Stock: 4600EGP30A Datasheet
EGP30A
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EGP30B
Fairchild SemiconductorIn Stock: 3473EGP30B Datasheet
EGP30B
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GI501-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6343GI501-E3/54 Datasheet
GI501-E3/54
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GI501-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1131GI501-E3/73 Datasheet
GI501-E3/73
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GP30B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3807GP30B-E3/54 Datasheet
GP30B-E3/54
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GP30B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 930GP30B-E3/73 Datasheet
GP30B-E3/73
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MR851G
onsemiIn Stock: 3369MR851G Datasheet
MR851G
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MR851RLG
onsemiIn Stock: 7576MR851RLG Datasheet
MR851RLG
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P300B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1148P300B-E3/54 Datasheet
P300B-E3/54
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RGP30B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 837RGP30B-E3/73 Datasheet
RGP30B-E3/73
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SBYV28-100-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3460SBYV28-100-E3/54 Datasheet
SBYV28-100-E3/54
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SBYV28-100-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2219SBYV28-100-E3/73 Datasheet
SBYV28-100-E3/73
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Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Mounting Type Through Hole
Package / Case DO-201AE, Axial
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the EGP30B-TP is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Requirements:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
  • Current - Average Rectified (Io): Must equal or exceed 3 A
  • Mounting Type: Through Hole
  • Package / Case: Axial configuration (DO-201AD or DO-201AE)

Acceptable Variations:

  • Forward voltage (Vf) may vary within standard rectifier specifications
  • Recovery speed (Standard or Fast Recovery) is acceptable
  • Reverse recovery time (trr) variations are acceptable
  • Operating temperature range may differ
  • Reverse leakage current within standard limits is acceptable

Substitute parts are grouped into two categories:

Category 1: Direct Electrical Equivalents (100 V, 3 A) Parts meeting identical voltage and current ratings with through-hole axial packaging.

Category 2: Package Variant Consideration Parts with identical electrical ratings but different axial package designations (DO-201AD vs. DO-201AE) are functionally equivalent for circuit operation.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed trr Package Temp Range Status
EGP30B-TP Micro Commercial Co 100 V 3 A 1 V @ 3 A Fast Recovery ≤ 500ns 50 ns DO-201AE -55°C ~ 150°C Obsolete
1N5401-E3/54 Vishay General Semiconductor 100 V 3 A 1.2 V @ 3 A Standard Recovery >500ns DO-201AD -50°C ~ 150°C Active
1N5401-E3/73 Vishay General Semiconductor 100 V 3 A 1.2 V @ 3 A Standard Recovery >500ns DO-201AD -50°C ~ 150°C Active
1N5401G Good-Ark Semiconductor 100 V 3 A 1.1 V @ 3 A Standard Recovery >500ns DO-201AD -55°C ~ 150°C Active
EGP30A Fairchild Semiconductor 50 V 3 A 950 mV @ 3 A Fast Recovery ≤ 500ns 50 ns DO-201AD -65°C ~ 150°C Active
EGP30B Fairchild Semiconductor 100 V 3 A 950 mV @ 3 A Fast Recovery ≤ 500ns 50 ns DO-201AD -65°C ~ 150°C Active
GI501-E3/54 Vishay General Semiconductor 100 V 3 A 1.1 V @ 9.4 A Standard Recovery >500ns 2 µs DO-201AD -50°C ~ 150°C Active
GI501-E3/73 Vishay General Semiconductor 100 V 3 A 1.1 V @ 9.4 A Standard Recovery >500ns 2 µs DO-201AD -50°C ~ 150°C Active
GP30B-E3/54 Vishay General Semiconductor 100 V 3 A 1.2 V @ 3 A Standard Recovery >500ns 5 µs DO-201AD -65°C ~ 175°C Active
GP30B-E3/73 Vishay General Semiconductor 100 V 3 A 1.2 V @ 3 A Standard Recovery >500ns 5 µs DO-201AD -65°C ~ 175°C Active
MR851G onsemi 100 V 3 A 1.25 V @ 3 A Fast Recovery ≤ 500ns 300 ns DO-201AA / DO-27 -65°C ~ 125°C Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

The following parts are recommended as primary substitutes for the obsolete EGP30B-TP:

EGP30B (Fairchild Semiconductor) — Active status, identical 100 V / 3 A electrical ratings, fast recovery characteristics matching the original specification, extended operating temperature range (-65°C ~ 150°C), ROHS3 compliant. Package variant is DO-201AD (functionally equivalent to DO-201AE).

1N5401G (Good-Ark Semiconductor) — Active status, identical 100 V / 3 A electrical ratings, operating temperature range matches original (-55°C ~ 150°C), ROHS3 compliant. Forward voltage specification (1.1 V @ 3 A) is closer to original than alternative 1N5401 variants.

Secondary Substitutes (Acceptable with Circuit Verification):

1N5401-E3/54 and 1N5401-E3/73 (Vishay General Semiconductor) — Active status, identical 100 V / 3 A ratings, ROHS3 compliant. Forward voltage is slightly elevated (1.2 V @ 3 A vs. 1 V @ 3 A original). Standard recovery speed differs from original fast recovery specification. Suitable for applications where forward voltage drop and recovery speed are not critical design parameters.

GP30B-E3/54 and GP30B-E3/73 (Vishay General Semiconductor, SUPERECTIFIER® series) — Active status, identical 100 V / 3 A ratings, extended temperature range (-65°C ~ 175°C), ROHS3 compliant. Forward voltage (1.2 V @ 3 A) and recovery time (5 µs) differ from original. Suitable for high-temperature applications.

GI501-E3/54 and GI501-E3/73 (Vishay General Semiconductor) — Active status, identical 100 V / 3 A ratings, ROHS3 compliant. Forward voltage specification is at higher current (1.1 V @ 9.4 A). Recovery time (2 µs) differs significantly from original. Acceptable for general-purpose rectification where recovery speed is not performance-critical.

MR851G (onsemi) — Active status, identical 100 V / 3 A ratings, fast recovery characteristics, ROHS3 compliant. Operating temperature range is limited (-65°C ~ 125°C). Package designation is DO-201AA / DO-27 (functionally equivalent axial configuration).

Not Recommended:

EGP30A (Fairchild Semiconductor) — Voltage rating is 50 V, which is insufficient for 100 V applications. Not suitable as a substitute.

Frequently Asked Questions (FAQ)

Q: Can I use a 50 V rated diode (EGP30A) in place of the 100 V EGP30B-TP?

A: No. The EGP30A is rated for 50 V maximum reverse voltage, while the EGP30B-TP is rated for 100 V. Using a lower voltage-rated component in a 100 V circuit creates risk of diode failure and circuit malfunction. Voltage rating must equal or exceed the application requirement.

Q: What is the difference between DO-201AE and DO-201AD packages?

A: Both are through-hole axial diode packages with identical electrical functionality. The designations refer to package variants from different manufacturers. Components in either package are mechanically and electrically interchangeable in through-hole PCB applications.

Q: Does the forward voltage difference between EGP30B-TP (1 V @ 3 A) and 1N5401-E3/54 (1.2 V @ 3 A) matter?

A: Forward voltage differences of 0.2 V are within normal rectifier specifications. The impact depends on circuit design. In high-current or precision applications, this difference may affect power dissipation and voltage regulation. In general-purpose rectification, the difference is typically negligible. Circuit analysis is required for critical applications.

Q: What does "Fast Recovery ≤ 500ns" mean compared to "Standard Recovery >500ns"?

A: Recovery speed refers to how quickly the diode transitions from conducting to blocking state. Fast recovery diodes (≤ 500ns) are suitable for high-frequency switching applications. Standard recovery diodes (>500ns) are adequate for line-frequency and low-frequency rectification. Application frequency determines which is appropriate.

Q: Are all substitute parts ROHS3 compliant like the original?

A: Yes. All recommended substitute parts listed are ROHS3 compliant, matching the environmental compliance status of the original EGP30B-TP.

Q: Can I use MR851G as a substitute even though its temperature range is -65°C ~ 125°C versus the original -55°C ~ 150°C?

A: MR851G has a narrower operating temperature range. It is suitable if your application operates within -65°C ~ 125°C. If your circuit requires operation above 125°C or below -65°C, MR851G is not appropriate. Verify application temperature requirements before selection.

Q: Why are there multiple variants of the same part number (e.g., 1N5401-E3/54 and 1N5401-E3/73)?

A: The suffix designations (-E3/54 and -E3/73) typically indicate different packaging or tape configurations from the same manufacturer. Electrically, these variants are identical. Selection depends on procurement format (cut tape, bulk, reel) and supplier availability.

Q: Is the EGP30B from Fairchild Semiconductor identical to the obsolete EGP30B-TP?

A: The EGP30B from Fairchild Semiconductor has identical electrical ratings (100 V, 3 A) and fast recovery characteristics. The primary difference is the package variant (DO-201AD vs. DO-201AE) and manufacturer. Both are functionally equivalent for circuit operation. The Fairchild part is active and currently available.

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