EGP30A-TP Equivalent & Substitute Parts

Part Overview

The EGP30A-TP is a general-purpose rectifier diode rated for 50 V DC reverse voltage and 3 A average rectified current in a through-hole DO-201AE axial package. Manufactured by Micro Commercial Co, this component is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts maintain the core electrical specifications while offering active product status and improved availability.

Substiute Parts

EGP30A-TP
Micro Commercial CoIn Stock: 769EGP30A-TP Datasheet
EGP30A-TP
Current Part
1N5400-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 190231N5400-E3/54 Datasheet
1N5400-E3/54
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1N5400-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 23991N5400-E3/73 Datasheet
1N5400-E3/73
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1N5400G
Taiwan Semiconductor CorporationIn Stock: 18811N5400G Datasheet
1N5400G
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1N5400G-T
Diodes IncorporatedIn Stock: 59771N5400G-T Datasheet
1N5400G-T
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1N5404RLG
onsemiIn Stock: 169101N5404RLG Datasheet
1N5404RLG
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EGP30B
Fairchild SemiconductorIn Stock: 3473EGP30B Datasheet
EGP30B
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GP30A-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 934GP30A-E3/54 Datasheet
GP30A-E3/54
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P300A-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 968P300A-E3/54 Datasheet
P300A-E3/54
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RGP30A-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1216RGP30A-E3/54 Datasheet
RGP30A-E3/54
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SBR1045SD1-T
Diodes IncorporatedIn Stock: 3551SBR1045SD1-T Datasheet
SBR1045SD1-T
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SBYV28-50-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 4740SBYV28-50-E3/54 Datasheet
SBYV28-50-E3/54
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SBYV28-50-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1118SBYV28-50-E3/73 Datasheet
SBYV28-50-E3/73
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UF5400-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 4677UF5400-E3/54 Datasheet
UF5400-E3/54
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UF5400-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2486UF5400-E3/73 Datasheet
UF5400-E3/73
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UG4A-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1137UG4A-E3/54 Datasheet
UG4A-E3/54
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UG4A-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1092UG4A-E3/73 Datasheet
UG4A-E3/73
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UG4A-M3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1195UG4A-M3/54 Datasheet
UG4A-M3/54
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UG4A-M3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1066UG4A-M3/73 Datasheet
UG4A-M3/73
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Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V
Mounting Type Through Hole
Package / Case DO-201AE, Axial
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the EGP30A-TP is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Voltage - DC Reverse (Vr) (Max): 50 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD or DO-201AE axial configuration

Acceptable Variations:

  • Voltage - Forward (Vf) (Max) @ If: Up to 1.3 V @ 3 A
  • Speed: Standard Recovery (>500ns) or Fast Recovery (≤500ns)
  • Reverse Recovery Time (trr): Up to 2 µs
  • Current - Reverse Leakage @ Vr: Up to 10 µA @ rated voltage
  • Operating Temperature - Junction: Minimum -50°C to maximum 150°C

Non-Substitutable Parameters:

  • Parts with voltage ratings below 50 V are not suitable
  • Parts with current ratings below 3 A are not suitable
  • Surface-mount packages are not compatible with through-hole requirements

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed trr Package Temp Range Status
EGP30A-TP Micro Commercial Co 50 V 3 A 1 V @ 3 A Fast Recovery ≤ 500ns 50 ns DO-201AE -55°C ~ 150°C Obsolete
1N5400-E3/54 Vishay General Semiconductor 50 V 3 A 1.2 V @ 3 A Standard Recovery >500ns DO-201AD -50°C ~ 150°C Active
1N5400-E3/73 Vishay General Semiconductor 50 V 3 A 1.2 V @ 3 A Standard Recovery >500ns DO-201AD -55°C ~ 150°C Active
1N5400G Taiwan Semiconductor Corporation 50 V 3 A 1.1 V @ 3 A Standard Recovery >500ns DO-201AD -55°C ~ 150°C Active
1N5400G-T Diodes Incorporated 50 V 3 A 1.1 V @ 3 A Standard Recovery >500ns 2 µs DO-201AD -65°C ~ 150°C Active
GP30A-E3/54 Vishay General Semiconductor 50 V 3 A 1.2 V @ 3 A Standard Recovery >500ns 5 µs DO-201AD -65°C ~ 175°C Active
P300A-E3/54 Vishay General Semiconductor 50 V 3 A 1.2 V @ 3 A Standard Recovery >500ns 2 µs DO-201AD -50°C ~ 150°C Active
RGP30A-E3/54 Vishay General Semiconductor 50 V 3 A 1.3 V @ 3 A Fast Recovery ≤ 500ns 150 ns DO-201AD -65°C ~ 175°C Active
EGP30B Fairchild Semiconductor 100 V 3 A 950 mV @ 3 A Fast Recovery ≤ 500ns 50 ns DO-201AD -65°C ~ 150°C Active

Engineering Selection Recommendations

Primary Substitutes (Electrical and Package Equivalence):

The following parts provide direct substitution for the EGP30A-TP with active product status and full compliance certifications:

  • 1N5400-E3/73 (Vishay General Semiconductor): Matches 50 V / 3 A specifications with identical temperature range (-55°C ~ 150°C). ROHS3 compliant. Active status with 2,300 units in stock.

  • 1N5400G-T (Diodes Incorporated): Matches 50 V / 3 A specifications with extended lower temperature limit (-65°C). ROHS3 compliant. Active status with 5,900 units in stock.

  • 1N5400G (Taiwan Semiconductor Corporation): Matches 50 V / 3 A specifications with extended lower temperature limit (-55°C). ROHS3 compliant. Active status with 1,855 units in stock.

Secondary Substitutes (Enhanced Performance):

  • RGP30A-E3/54 (Vishay General Semiconductor): Maintains 50 V / 3 A core specifications with fast recovery characteristics (150 ns trr) matching the original part's recovery speed profile. Extended temperature range (-65°C ~ 175°C). ROHS3 compliant. Active status with 1,127 units in stock.

  • GP30A-E3/54 (Vishay General Semiconductor): Maintains 50 V / 3 A core specifications with extended temperature range (-65°C ~ 175°C). ROHS3 compliant. Active status with 907 units in stock.

Alternative with Higher Voltage Rating:

  • EGP30B (Fairchild Semiconductor): Provides 100 V / 3 A rating with fast recovery characteristics (50 ns trr) identical to the original part. Suitable for applications requiring higher voltage margin. ROHS3 compliant. Active status with 3,382 units in stock.

Not Recommended:

  • 1N5404RLG (onsemi): 400 V rating exceeds application requirements and is marked "Not For New Designs."
  • SBR1045SD1-T (Diodes Incorporated): 10 A current rating and Super Barrier technology represent different device class; not equivalent.

Frequently Asked Questions (FAQ)

Q: Can I use a 1N5400-E3/54 as a direct replacement for the EGP30A-TP?

A: Yes. The 1N5400-E3/54 meets the core electrical requirements: 50 V reverse voltage, 3 A average rectified current, and through-hole DO-201AD axial package. Both are ROHS3 compliant. The primary difference is forward voltage (1.2 V vs. 1 V) and recovery speed classification (Standard vs. Fast Recovery), which are acceptable variations for general-purpose rectification applications.

Q: What is the difference between DO-201AE and DO-201AD packages?

A: Both are through-hole axial diode packages with identical electrical and mechanical compatibility for circuit board mounting. The designations represent minor package variant specifications from different manufacturers. Substitution between these packages is acceptable for the EGP30A-TP application.

Q: Why do some substitute parts have different temperature ranges?

A: Operating temperature range reflects the manufacturer's device characterization and qualification limits. The EGP30A-TP specifies -55°C ~ 150°C. Substitute parts with identical or extended ranges (-65°C ~ 150°C or -50°C ~ 150°C) are acceptable. Parts with narrower ranges may be used if the application operates within those limits.

Q: Is the RGP30A-E3/54 a better choice than the 1N5400-E3/73?

A: Both are valid substitutes. The RGP30A-E3/54 offers fast recovery characteristics (150 ns) closer to the original part (50 ns) and extended temperature range (-65°C ~ 175°C). The 1N5400-E3/73 provides standard recovery with identical temperature range to the original. Selection depends on application requirements for recovery speed and thermal performance.

Q: Can I substitute the EGP30A-TP with the EGP30B?

A: The EGP30B is electrically compatible with 50 V / 3 A operation but provides 100 V reverse voltage rating. This higher rating is acceptable for applications where voltage margin is beneficial. However, it represents over-specification for 50 V applications. Use only if design requirements or supply constraints necessitate the higher voltage rating.

Q: What does "Fast Recovery ≤ 500ns" mean for my application?

A: Recovery time (trr) indicates how quickly the diode transitions from conducting to blocking state. Fast recovery (≤ 500ns) is beneficial in switching applications and high-frequency circuits. Standard recovery (> 500ns) is suitable for general-purpose rectification at lower frequencies. The EGP30A-TP specifies 50 ns fast recovery; substitutes with either classification are acceptable unless the application specifically requires fast recovery performance.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the original part's environmental compliance status.

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