EGP20D-TP Equivalent & Substitute Parts

Part Overview

The EGP20D-TP is a general-purpose rectifier diode rated for 200 V DC reverse voltage and 2 A average rectified current in a DO-15 through-hole axial package. Manufactured by Micro Commercial Co, this component is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs, production continuity, and long-term component availability. Active alternatives maintain the same electrical specifications while offering improved availability and compliance certifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	1 V @ 2 A	V @ A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Mounting Type	Through Hole	-
Package / Case	DO-204AC, DO-15, Axial	-
Operating Temperature - Junction	-55°C ~ 150°C	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the EGP20D-TP are classified into two categories based on electrical parameter alignment:

Upgrade Substitutes (Direct Equivalents): Parts EGP20D-E3/54 and EGP20D-E3/73 are direct functional equivalents. These parts maintain identical voltage ratings (200 V), current ratings (2 A), fast recovery speed characteristics (≤ 500ns), and reverse recovery time (50 ns). Both are manufactured by Vishay General Semiconductor and feature active product status. The primary differences are packaging format (Cut Tape vs. alternative formats) and extended operating temperature range (-65°C to 150°C vs. -55°C to 150°C). These parts are suitable for direct replacement in applications requiring the original EGP20D-TP specifications.

Similar Substitutes (Reduced Current Rating): Parts 1N5059GP-E3/54 and 1N5615GP-E3/54 maintain the 200 V voltage rating but feature reduced current ratings (1 A vs. 2 A). These parts are suitable only for applications where the full 2 A current capacity is not required. Part 1N5615GP-E3/54 offers fast recovery characteristics (≤ 500ns, 150 ns trr) comparable to the original, while 1N5059GP-E3/54 features standard recovery characteristics (> 500ns, 2 µs trr).

Similar Substitutes (Intermediate Current Rating): Parts 1N5393GP-E3/54 and 1N5393GP-E3/73 maintain the 200 V voltage rating with an intermediate current rating of 1.5 A. These parts feature standard recovery characteristics and are suitable for applications requiring current capacity between 1 A and 2 A.

Similar Substitutes (Alternative Package Technology): Parts BYW32-TAP, BYW32-TR, and BYW52-TR are avalanche diodes rated for 200 V and 2 A in SOD-57 package format. These parts maintain voltage and current specifications but differ in package geometry (SOD-57 vs. DO-15) and recovery characteristics. BYW32 variants feature fast recovery (200 ns trr), while BYW52-TR features standard recovery (4 µs trr).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V @ A]	Speed	trr [ns]	Ir @ Vr [µA @ V]	Package	Status
EGP20D-TP	Micro Commercial Co	200	2	1 @ 2	Fast Recovery ≤ 500ns	50	5 @ 200	DO-15	Obsolete
EGP20D-E3/54	Vishay General Semiconductor	200	2	0.95 @ 2	Fast Recovery ≤ 500ns	50	5 @ 200	DO-204AC (DO-15)	Active
EGP20D-E3/73	Vishay General Semiconductor	200	2	0.95 @ 2	Fast Recovery ≤ 500ns	50	5 @ 200	DO-204AC (DO-15)	Active
1N5059GP-E3/54	Vishay General Semiconductor	200	1	1.2 @ 1	Standard Recovery > 500ns	2000	5 @ 200	DO-204AC (DO-15)	Active
1N5393GP-E3/54	Vishay General Semiconductor	200	1.5	1.4 @ 1.5	Standard Recovery > 500ns	2000	5 @ 200	DO-204AC (DO-15)	Active
1N5393GP-E3/73	Vishay General Semiconductor	200	1.5	1.4 @ 1.5	Standard Recovery > 500ns	2000	5 @ 200	DO-204AC (DO-15)	Active
1N5615GP-E3/54	Vishay General Semiconductor	200	1	1.2 @ 1	Fast Recovery ≤ 500ns	150	0.5 @ 200	DO-204AC (DO-15)	Active
1N5615GP-E3/73	Vishay General Semiconductor	200	1	1.2 @ 1	Fast Recovery ≤ 500ns	150	0.5 @ 200	DO-204AC (DO-15)	Active
BYW32-TAP	Vishay General Semiconductor	200	2	1.1 @ 1	Fast Recovery ≤ 500ns	200	5 @ 200	SOD-57	Active
BYW32-TR	Vishay General Semiconductor	200	2	1.1 @ 1	Fast Recovery ≤ 500ns	200	5 @ 200	SOD-57	Active
BYW52-TR	Vishay General Semiconductor	200	2	1 @ 1	Standard Recovery > 500ns	4000	1 @ 200	SOD-57	Active

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

Select EGP20D-E3/54 or EGP20D-E3/73 when the application requires exact electrical equivalence to the EGP20D-TP. Both parts maintain 200 V reverse voltage, 2 A current rating, fast recovery characteristics (50 ns trr), and identical forward voltage drop (950 mV @ 2 A). Both parts are ROHS3 compliant and manufactured by Vishay General Semiconductor with active product status. EGP20D-E3/73 offers higher inventory availability (3900 pcs) compared to EGP20D-E3/54 (1120 pcs). The extended operating temperature range (-65°C to 150°C) of these parts provides improved thermal margin compared to the original specification (-55°C to 150°C).

For Current-Limited Applications (1 A Maximum):

Select 1N5615GP-E3/54 or 1N5615GP-E3/73 when the application circuit operates at or below 1 A. These parts maintain the 200 V voltage rating and fast recovery characteristics (150 ns trr) with significantly reduced reverse leakage current (500 nA @ 200 V vs. 5 µA @ 200 V). Both parts are ROHS3 compliant and active. 1N5615GP-E3/54 provides higher inventory (11294 pcs) and extended operating temperature range (-65°C to 175°C).

For Intermediate Current Applications (1.5 A Maximum):

Select 1N5393GP-E3/54 or 1N5393GP-E3/73 when the application requires current capacity between 1 A and 2 A. These parts maintain the 200 V voltage rating with 1.5 A current rating. Both are ROHS3 compliant and active. 1N5393GP-E3/54 provides higher inventory (7397 pcs) and extended operating temperature range (-65°C to 175°C).

For Alternative Package Geometry (SOD-57):

Select BYW32-TAP or BYW32-TR when the application requires 200 V, 2 A specifications in SOD-57 package format with fast recovery characteristics (200 ns trr). Both are ROHS3 compliant and active. BYW32-TAP offers higher inventory (9211 pcs). Select BYW52-TR only when standard recovery characteristics are acceptable; this part features 4 µs trr and reduced reverse leakage (1 µA @ 200 V).

Compliance and Certification:

All recommended substitute parts are ROHS3 compliant and REACH unaffected, matching the original EGP20D-TP compliance status. All parts carry ECCN EAR99 classification and HTSUS code 8541.10.0080.

Frequently Asked Questions (FAQ)

Q: Can EGP20D-E3/54 or EGP20D-E3/73 be used as direct replacements for EGP20D-TP?

A: Yes. Both parts maintain identical voltage (200 V), current (2 A), and recovery characteristics (50 ns trr). The forward voltage drop is slightly lower (950 mV vs. 1 V @ 2 A), which is within acceptable tolerance for general-purpose rectifier applications. Both parts are physically compatible with DO-15 package footprints.

Q: What is the difference between EGP20D-E3/54 and EGP20D-E3/73?

A: Both parts are electrically identical. The difference is in packaging format and supplier designation. EGP20D-E3/73 has higher inventory availability (3900 pcs vs. 1120 pcs). Selection between these variants depends on supplier availability and packaging requirements (Cut Tape format).

Q: Can 1N5615GP-E3/54 replace EGP20D-TP in all applications?

A: No. 1N5615GP-E3/54 is suitable only for applications where the maximum current requirement does not exceed 1 A. The part maintains the 200 V voltage rating and offers superior fast recovery characteristics (150 ns trr) and lower reverse leakage (500 nA @ 200 V). If the application circuit requires the full 2 A capacity, this part is not suitable.

Q: What is the advantage of 1N5393GP-E3/54 over 1N5059GP-E3/54?

A: 1N5393GP-E3/54 provides 1.5 A current capacity compared to 1 A for 1N5059GP-E3/54, while maintaining the same 200 V voltage rating. Both parts feature standard recovery characteristics (2 µs trr). Selection depends on the specific current requirement of the application circuit.

Q: Are BYW32 and BYW52 parts suitable replacements for EGP20D-TP?

A: BYW32-TAP and BYW32-TR are suitable for applications requiring 200 V, 2 A specifications with fast recovery characteristics, but they use SOD-57 package format instead of DO-15. This requires different PCB footprint and mounting considerations. BYW52-TR features standard recovery characteristics (4 µs trr) and is suitable only when slower recovery is acceptable.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (≤ 500ns trr) exhibit shorter reverse recovery time, reducing switching losses and enabling operation at higher frequencies. Standard recovery diodes (> 500ns trr) have longer recovery times but lower forward voltage drop in some applications. Selection depends on circuit switching frequency and efficiency requirements.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts are ROHS3 compliant and REACH unaffected, matching the original EGP20D-TP compliance status.

Q: What is the operating temperature range difference between EGP20D-TP and substitute parts?

A: EGP20D-TP operates from -55°C to 150°C. Most Vishay substitute parts extend the lower temperature limit to -65°C and some extend the upper limit to 175°C. This provides improved thermal margin for applications operating at temperature extremes.

Q: Can I use multiple lower-current parts in parallel to replace EGP20D-TP?

A: Parallel connection of diodes is not recommended for this application category without additional design considerations such as current-sharing resistors. Direct substitution with a single part rated for the required current is the standard engineering practice.

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