EGP10G Equivalent & Substitute Parts

Part Overview

The EGP10G is a general-purpose rectifier diode manufactured by onsemi, rated for 400 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole axial package. This device is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Identification of equivalent and substitute parts is necessary for applications requiring continued support, legacy system maintenance, or when the primary part becomes unavailable. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating different package configurations and recovery characteristics.

Substiute Parts

EGP10G
onsemiIn Stock: 25768EGP10G Datasheet
EGP10G
Current Part
1N4936G
Taiwan Semiconductor CorporationIn Stock: 16841N4936G Datasheet
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MUR140RLG
onsemiIn Stock: 7343MUR140RLG Datasheet
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MUR240RLG
onsemiIn Stock: 10423MUR240RLG Datasheet
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1N4004-AP
Micro Commercial CoIn Stock: 88011N4004-AP Datasheet
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1N4004-BP
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1N4004-E3/53
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1N4004-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 12491N4004-E3/73 Datasheet
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1N4004E-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 189971N4004E-E3/53 Datasheet
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1N4246GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 11611N4246GP-E3/73 Datasheet
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1N4936-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 10761N4936-E3/53 Datasheet
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1N4936-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 127461N4936-E3/54 Datasheet
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1N4936GP-AP
Micro Commercial CoIn Stock: 10631N4936GP-AP Datasheet
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1N4936GP-BP
Micro Commercial CoIn Stock: 10291N4936GP-BP Datasheet
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1N4936GP-TP
Micro Commercial CoIn Stock: 10761N4936GP-TP Datasheet
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1N4944GP-AP
Micro Commercial CoIn Stock: 10251N4944GP-AP Datasheet
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1N5395-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 42421N5395-E3/73 Datasheet
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BA157GP-AP
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BYT54G-TAP
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BYV26B-TAP
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D4G-T
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FR104G A0G
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FR104GP-AP
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FR104GP-TP
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GP08G-E3/54
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GP08G-E3/73
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GP10-4004E-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 807GP10-4004E-E3/73 Datasheet
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GP10G-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 11742GP10G-E3/54 Datasheet
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GP10G-E3/73
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GP10GE-E3/53
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GPP10G-E3/54
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GPP10G-E3/73
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MPG06G-E3/100
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MPG06G-E3/53
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MPG06G-E3/54
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MPG06G-E3/73
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MPG06GHE3_A/54
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MPG06GHE3_A/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 864MPG06GHE3_A/73 Datasheet
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MUR140-T
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MUR140GP-AP
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MUR140GP-BP
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MUR140GP-TP
Micro Commercial CoIn Stock: 788MUR140GP-TP Datasheet
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MUR140GP-TP-HF
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RGP10G-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 819RGP10G-E3/53 Datasheet
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RGP10GE-E3/53
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RMPG06G-E3/100
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RMPG06G-E3/53
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RMPG06GHE3_A/54
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RMPG06GHE3_A/73
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SF4004-TAP
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SF4004-TR
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UF4004-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 9715UF4004-E3/53 Datasheet
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UF4004-E3/54
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UF4004-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 3196UF4004-E3/73 Datasheet
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UF4004-M3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 11915UF4004-M3/54 Datasheet
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UF4004-M3/73
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UF4004GP-AP
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UF4004GP-BP
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UF4004GP-TP
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EGP10G-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 886EGP10G-E3/54 Datasheet
EGP10G-E3/54
Parametric Equivalent
EGP10G-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 26456EGP10G-E3/73 Datasheet
EGP10G-E3/73
Parametric Equivalent

Key Parameters

Parameter EGP10G Value Unit Substitution Criticality
Voltage - DC Reverse (Vr) (Max) 400 V Critical
Current - Average Rectified (Io) 1 A Critical
Voltage - Forward (Vf) (Max) @ If 1.25 @ 1 A V Important
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) - Important
Reverse Recovery Time (trr) 50 ns Important
Current - Reverse Leakage @ Vr 5 µA @ 400 V Important
Mounting Type Through Hole - Critical
Package / Case DO-204AL, DO-41, Axial - Critical
Operating Temperature - Junction -65 to 150 °C Important
RoHS Status ROHS3 Compliant - Important

Substitute Part Grouping Explanation

Substitute parts for the EGP10G are grouped based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Parameters (Must Match or Exceed):

  • Voltage - DC Reverse (Vr): Minimum 400 V
  • Current - Average Rectified (Io): Minimum 1 A
  • Mounting Type: Through Hole
  • Package Configuration: DO-41 or DO-204AL (DO-41) equivalent

Secondary Parameters (Should Match or Be Superior):

  • Voltage - Forward (Vf): Lower or equal values preferred
  • Reverse Recovery Time (trr): Lower values indicate faster switching capability
  • Reverse Leakage Current: Lower values preferred
  • Operating Temperature Range: Should encompass or exceed the original range

Compatibility Considerations:

  • Fast Recovery diodes (trr ≤ 500ns) are direct substitutes for the EGP10G
  • Standard Recovery diodes (trr > 500ns) are functional substitutes but exhibit different switching characteristics
  • Axial package variants are mechanically compatible with DO-41 through-hole applications
  • Current ratings of 2 A are acceptable for 1 A applications (derating margin)

Parameter Comparison

Part Number Manufacturer Vr (Max) V Io (A) Vf (Max) V @ If Speed trr (ns) Ir @ Vr (µA) Package Temp Range (°C) Product Status
EGP10G onsemi 400 1 1.25 @ 1 A Fast Recovery ≤ 500ns 50 5 @ 400 V DO-41 -65 to 150 Not For New Designs
1N4936G Taiwan Semiconductor Corporation 400 1 1.2 @ 1 A Fast Recovery ≤ 500ns 200 5 @ 400 V DO-204AL (DO-41) -55 to 150 Active
MUR140RLG onsemi 400 1 1.25 @ 1 A Fast Recovery ≤ 500ns 75 5 @ 400 V Axial -65 to 175 Active
MUR240RLG onsemi 400 2 1.3 @ 2 A Fast Recovery ≤ 500ns 65 5 @ 400 V Axial -65 to 175 Active
1N4004-AP Micro Commercial Co 400 1 1 @ 1 A Standard Recovery > 500ns 2000 5 @ 400 V DO-41 -55 to 150 Active
1N4004-BP Micro Commercial Co 400 1 1 @ 1 A Standard Recovery > 500ns 2000 5 @ 400 V DO-41 -55 to 150 Active
1N4004-E3/53 Vishay General Semiconductor - Diodes Division 400 1 1.1 @ 1 A Standard Recovery > 500ns Not Specified 5 @ 400 V DO-204AL (DO-41) -50 to 150 Active
1N4004-E3/73 Vishay General Semiconductor - Diodes Division 400 1 1.1 @ 1 A Standard Recovery > 500ns Not Specified 5 @ 400 V DO-204AL (DO-41) -55 to 150 Active
1N4004E-E3/53 Vishay General Semiconductor - Diodes Division 400 1 1.1 @ 1 A Standard Recovery > 500ns Not Specified 5 @ 400 V DO-204AL (DO-41) -50 to 150 Active
1N4246GP-E3/73 Vishay General Semiconductor - Diodes Division 400 1 1.2 @ 1 A Standard Recovery > 500ns Not Specified 1 @ 400 V DO-204AL (DO-41) -65 to 160 Active
1N4936-E3/53 Vishay General Semiconductor - Diodes Division 400 1 1.2 @ 1 A Fast Recovery ≤ 500ns 200 5 @ 400 V DO-204AL (DO-41) -65 to 175 Active

Engineering Selection Recommendations

Fast Recovery Substitutes (Preferred for EGP10G Replacement):

The MUR140RLG and 1N4936G are the primary recommended substitutes for the EGP10G. Both maintain the 400 V / 1 A electrical specification and fast recovery characteristics (≤ 500ns). The MUR140RLG is manufactured by onsemi (original EGP10G manufacturer) and offers an extended operating temperature range (-65°C to 175°C) with a reverse recovery time of 75 ns, providing superior switching performance. The 1N4936G from Taiwan Semiconductor Corporation is an active product with identical electrical ratings and is available in higher inventory quantities. Both parts are ROHS3 compliant and suitable for direct substitution in applications requiring fast recovery diode performance.

The MUR240RLG is a 2 A rated variant that provides additional current margin for 1 A applications. This part is recommended when design headroom or thermal derating is required. It maintains the 400 V reverse voltage specification and offers the fastest reverse recovery time (65 ns) among all listed substitutes.

Standard Recovery Substitutes (Functional Alternatives):

The 1N4004 series (1N4004-AP, 1N4004-BP, 1N4004-E3/53, 1N4004-E3/73, 1N4004E-E3/53) and 1N4246GP-E3/73 are functional substitutes with identical 400 V / 1 A ratings but employ standard recovery technology (trr > 500ns). These parts are suitable for low-frequency rectification applications where switching speed is not a critical design parameter. The 1N4004 variants offer lower forward voltage drops (1.0 to 1.1 V) compared to the EGP10G (1.25 V), resulting in reduced power dissipation. The 1N4246GP-E3/73 exhibits superior reverse leakage characteristics (1 µA @ 400 V versus 5 µA) and is classified as a SUPERECTIFIER® product.

Product Status Consideration:

All recommended substitutes carry "Active" product status, ensuring continued availability and manufacturing support. The EGP10G's "Not For New Designs" classification necessitates substitution for ongoing production and new applications.

Compliance and Certification:

All substitute parts listed are ROHS3 compliant and REACH unaffected, maintaining regulatory alignment with the original EGP10G specification.

Frequently Asked Questions (FAQ)

Q: Can the MUR240RLG (2 A rated) be used in place of the EGP10G (1 A rated)?

A: Yes. The MUR240RLG is electrically compatible with the EGP10G. The 2 A current rating provides design margin and does not create incompatibility. The 400 V reverse voltage specification is identical. The higher current rating allows the device to operate at lower junction temperatures in 1 A applications, improving reliability and extending component life.

Q: What is the difference between fast recovery and standard recovery diodes in the context of EGP10G substitution?

A: The EGP10G is classified as a fast recovery diode with a reverse recovery time (trr) of 50 ns. Fast recovery diodes switch off more rapidly than standard recovery diodes, reducing switching losses in high-frequency applications. Standard recovery substitutes (1N4004 series, 1N4246GP-E3/73) have trr values exceeding 500 ns. In low-frequency rectification circuits (line frequency or lower), standard recovery diodes function identically to fast recovery devices. In switching power supplies and high-frequency applications, fast recovery substitutes (MUR140RLG, 1N4936G, MUR240RLG) are required to maintain circuit performance and efficiency.

Q: Are DO-41 and DO-204AL packages mechanically interchangeable?

A: Yes. DO-41 and DO-204AL are equivalent package designations for axial through-hole diodes. Both refer to the same physical form factor with identical lead spacing and mounting characteristics. Substitutes specified as DO-204AL (DO-41) or Axial are mechanically compatible with EGP10G applications.

Q: Why does the 1N4936G have a longer reverse recovery time (200 ns) than the EGP10G (50 ns) while still being classified as fast recovery?

A: Both devices meet the fast recovery classification threshold of ≤ 500 ns. The EGP10G represents a faster subset within the fast recovery category. The 1N4936G is functionally compatible and suitable for the same applications, though with slightly different switching characteristics. In most rectification circuits, the difference between 50 ns and 200 ns recovery time is not performance-limiting.

Q: What is the significance of the operating temperature range difference between EGP10G (-65°C to 150°C) and MUR140RLG (-65°C to 175°C)?

A: The MUR140RLG supports a 25°C higher maximum junction temperature (175°C versus 150°C). This extended range provides additional thermal margin in high-temperature environments and allows for higher power dissipation before reaching the maximum rated junction temperature. For applications operating within the EGP10G's original temperature range, both devices are equivalent. For applications approaching 150°C, the MUR140RLG offers superior thermal headroom.

Q: Can standard recovery diodes like the 1N4004 series be used in switching power supply applications designed for the EGP10G?

A: Standard recovery diodes are not recommended for switching power supply applications. The 1N4004 series exhibits a reverse recovery time of 2 µs, which is 40 times longer than the EGP10G. This extended recovery time increases switching losses, generates electromagnetic interference, and can cause circuit instability in high-frequency switching topologies. Fast recovery substitutes (MUR140RLG, 1N4936G, MUR240RLG) are required for switching power supply applications.

Q: Is the lower forward voltage of 1N4004 variants (1.0 to 1.1 V) preferable to the EGP10G specification (1.25 V)?

A: Lower forward voltage reduces power dissipation and heat generation, which is advantageous in all applications. However, the 1N4004 variants achieve this lower voltage through standard recovery technology, which introduces the switching speed limitations discussed above. For low-frequency rectification applications where switching speed is not critical, the 1N4004 variants offer improved efficiency. For switching applications, the fast recovery substitutes (MUR140RLG, 1N4936G) are required despite their higher forward voltage specification.

Q: What inventory considerations should guide substitute part selection?

A: The MUR240RLG offers the highest inventory availability (10,400 pcs), followed by 1N4004-E3/53 (76,171 pcs) and MUR140RLG (7,270 pcs). The 1N4936G from Taiwan Semiconductor Corporation has lower inventory (1,585 pcs). For applications requiring immediate availability and long-term supply security, the MUR240RLG or 1N4004-E3/53 are preferred. For fast recovery performance with onsemi manufacturing continuity, the MUR140RLG is recommended.

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