EGP10D-TP Equivalent & Substitute Parts

Part Overview

The EGP10D-TP is a general-purpose rectifier diode rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole axial package. Manufactured by Micro Commercial Co, this component is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs, production continuity, and long-term component availability.

Substiute Parts

EGP10D-TP
Micro Commercial CoIn Stock: 969EGP10D-TP Datasheet
EGP10D-TP
Current Part
1N4003-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 189701N4003-E3/54 Datasheet
1N4003-E3/54
Direct
1N4003-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 228571N4003-E3/73 Datasheet
1N4003-E3/73
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1N4003E-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 229321N4003E-E3/54 Datasheet
1N4003E-E3/54
Direct
1N4003E-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 240881N4003E-E3/73 Datasheet
1N4003E-E3/73
Direct
EGP10D-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 1048EGP10D-E3/53 Datasheet
EGP10D-E3/53
Upgrade
EGP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6028EGP10D-E3/54 Datasheet
EGP10D-E3/54
Upgrade
EGP10D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 3041EGP10D-E3/73 Datasheet
EGP10D-E3/73
Upgrade
1N3611
Microchip TechnologyIn Stock: 15311N3611 Datasheet
1N3611
Similar
1N3611GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 7571N3611GP-E3/73 Datasheet
1N3611GP-E3/73
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1N4003-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 275291N4003-E3/53 Datasheet
1N4003-E3/53
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1N4003E-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 9201N4003E-E3/53 Datasheet
1N4003E-E3/53
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1N4003GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 67121N4003GP-E3/54 Datasheet
1N4003GP-E3/54
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1N4003GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 66831N4003GP-E3/73 Datasheet
1N4003GP-E3/73
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1N4003GPE-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 11241N4003GPE-E3/53 Datasheet
1N4003GPE-E3/53
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1N4003GPE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 7971N4003GPE-E3/54 Datasheet
1N4003GPE-E3/54
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1N4003T-G
Comchip TechnologyIn Stock: 9841N4003T-G Datasheet
1N4003T-G
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1N4935-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 961111N4935-E3/73 Datasheet
1N4935-E3/73
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1N5393-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 101971N5393-E3/54 Datasheet
1N5393-E3/54
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1N5393-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 51221N5393-E3/73 Datasheet
1N5393-E3/73
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BYD13DGPHE3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1156BYD13DGPHE3/54 Datasheet
BYD13DGPHE3/54
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BYD13DGPHE3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 970BYD13DGPHE3/73 Datasheet
BYD13DGPHE3/73
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BYD33DGPHE3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 836BYD33DGPHE3/54 Datasheet
BYD33DGPHE3/54
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BYD33DGPHE3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1008BYD33DGPHE3/73 Datasheet
BYD33DGPHE3/73
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BYV26A-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 10437BYV26A-TAP Datasheet
BYV26A-TAP
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GP08D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 959GP08D-E3/54 Datasheet
GP08D-E3/54
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GP08D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1159GP08D-E3/73 Datasheet
GP08D-E3/73
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GP10-4003-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 12179GP10-4003-E3/54 Datasheet
GP10-4003-E3/54
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GP10-4003-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 961GP10-4003-E3/73 Datasheet
GP10-4003-E3/73
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GP10-4003E-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 880GP10-4003E-E3/54 Datasheet
GP10-4003E-E3/54
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GP10D-4003EHE3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 884GP10D-4003EHE3/54 Datasheet
GP10D-4003EHE3/54
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GP10D-4003HE3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 721GP10D-4003HE3/54 Datasheet
GP10D-4003HE3/54
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GP10D-4003HE3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 802GP10D-4003HE3/73 Datasheet
GP10D-4003HE3/73
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GP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 911GP10D-E3/54 Datasheet
GP10D-E3/54
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GP10D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1087GP10D-E3/73 Datasheet
GP10D-E3/73
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GP10DE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1134GP10DE-E3/54 Datasheet
GP10DE-E3/54
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GPP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1140GPP10D-E3/54 Datasheet
GPP10D-E3/54
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MMDL770T1G
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RGP10DE-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 863RGP10DE-E3/53 Datasheet
RGP10DE-E3/53
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RGP10DE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 917RGP10DE-E3/54 Datasheet
RGP10DE-E3/54
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RGP10DE-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1037RGP10DE-E3/73 Datasheet
RGP10DE-E3/73
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RMPG06DHE3_A/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1043RMPG06DHE3_A/54 Datasheet
RMPG06DHE3_A/54
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STTH102
STMicroelectronicsIn Stock: 1615STTH102 Datasheet
STTH102
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STTH102RL
STMicroelectronicsIn Stock: 15503STTH102RL Datasheet
STTH102RL
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UF1003-T
Diodes IncorporatedIn Stock: 1342UF1003-T Datasheet
UF1003-T
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UF4003-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 1061UF4003-E3/53 Datasheet
UF4003-E3/53
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UG1D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 2361UG1D-E3/54 Datasheet
UG1D-E3/54
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HER103G
Taiwan Semiconductor CorporationIn Stock: 801HER103G Datasheet
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HER103G R1G
Taiwan Semiconductor CorporationIn Stock: 840HER103G R1G Datasheet
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UF102G_R2_00001
Panjit International Inc.In Stock: 4808UF102G_R2_00001 Datasheet
UF102G_R2_00001
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UF1D
Taiwan Semiconductor CorporationIn Stock: 10343UF1D Datasheet
UF1D
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UF1D R1G
Taiwan Semiconductor CorporationIn Stock: 956UF1D R1G Datasheet
UF1D R1G
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UF1DH
Taiwan Semiconductor CorporationIn Stock: 5928UF1DH Datasheet
UF1DH
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UF1DHR1G
Taiwan Semiconductor CorporationIn Stock: 1218UF1DHR1G Datasheet
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UF4003
Diotec SemiconductorIn Stock: 15291UF4003 Datasheet
UF4003
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UF4003
Diotec SemiconductorIn Stock: 15291UF4003 Datasheet
UF4003
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UF4003 R1G
Taiwan Semiconductor CorporationIn Stock: 1028UF4003 R1G Datasheet
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UF4003-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1451UF4003-E3/54 Datasheet
UF4003-E3/54
Parametric Equivalent
UF4003-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2185UF4003-E3/73 Datasheet
UF4003-E3/73
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UF4003-G
Comchip TechnologyIn Stock: 7540UF4003-G Datasheet
UF4003-G
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UF4003-M3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 799UF4003-M3/54 Datasheet
UF4003-M3/54
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UF4003H
Taiwan Semiconductor CorporationIn Stock: 996UF4003H Datasheet
UF4003H
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UF4003HR1G
Taiwan Semiconductor CorporationIn Stock: 856UF4003HR1G Datasheet
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Parametric Equivalent

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the EGP10D-TP are classified into three categories based on electrical and mechanical compatibility:

Direct Substitutes (1N4003 Series): Parts 1N4003-E3/54, 1N4003-E3/73, 1N4003E-E3/54, and 1N4003E-E3/73 share identical voltage and current ratings (200 V, 1 A) and through-hole DO-41 packaging. These parts differ in forward voltage specification (1.1 V @ 1 A versus 1 V @ 1 A) and recovery speed classification (standard recovery >500ns versus fast recovery ≤500ns). All are manufactured by Vishay General Semiconductor and carry active product status with ROHS3 compliance.

Upgrade Substitutes (EGP10D Series): Parts EGP10D-E3/53, EGP10D-E3/54, and EGP10D-E3/73 maintain the same voltage, current, and package specifications as the original EGP10D-TP. These upgrades feature improved forward voltage (950 mV @ 1 A), fast recovery characteristics (≤500ns, 50 ns trr), and extended lower operating temperature range (-65°C versus -55°C). All are active products from Vishay General Semiconductor with ROHS3 compliance.

Similar Alternatives (1N3611 Series): Parts 1N3611, 1N3611GP-E3/73, and 1N4003-E3/53 provide functional equivalence with 200 V, 1 A ratings and through-hole mounting. The 1N3611 from Microchip Technology uses axial package format (A, Axial) rather than DO-41. The 1N3611GP-E3/73 from Vishay uses DO-41 packaging with standard recovery characteristics. These alternatives are suitable where package format flexibility exists.

Substitution eligibility is determined by matching: voltage rating (200 V), current rating (1 A), mounting type (through-hole), and package compatibility (DO-41 or equivalent axial format).

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf @ If Speed trr Package Temp Range Status
EGP10D-TP Micro Commercial Co 200 V 1 A 1 V @ 1 A Fast Recovery ≤500ns 50 ns DO-41 -55°C ~ 150°C Obsolete
1N4003-E3/54 Vishay 200 V 1 A 1.1 V @ 1 A Standard Recovery >500ns DO-41 -55°C ~ 150°C Active
1N4003-E3/73 Vishay 200 V 1 A 1.1 V @ 1 A Standard Recovery >500ns DO-41 -55°C ~ 150°C Active
1N4003E-E3/54 Vishay 200 V 1 A 1.1 V @ 1 A Standard Recovery >500ns DO-41 -55°C ~ 150°C Active
1N4003E-E3/73 Vishay 200 V 1 A 1.1 V @ 1 A Standard Recovery >500ns DO-41 -55°C ~ 150°C Active
EGP10D-E3/53 Vishay 200 V 1 A 950 mV @ 1 A Fast Recovery ≤500ns 50 ns DO-41 -65°C ~ 150°C Active
EGP10D-E3/54 Vishay 200 V 1 A 950 mV @ 1 A Fast Recovery ≤500ns 50 ns DO-41 -65°C ~ 150°C Active
EGP10D-E3/73 Vishay 200 V 1 A 950 mV @ 1 A Fast Recovery ≤500ns 50 ns DO-41 -65°C ~ 150°C Active
1N3611 Microchip Technology 200 V 1 A 1.1 V @ 1 A Standard Recovery >500ns Axial -65°C ~ 175°C Active
1N3611GP-E3/73 Vishay 200 V 1 A 1 V @ 1 A Standard Recovery >500ns 2 µs DO-41 -65°C ~ 175°C Active
1N4003-E3/53 Vishay 200 V 1 A 1.1 V @ 1 A Standard Recovery >500ns DO-41 -55°C ~ 150°C Active

Engineering Selection Recommendations

For Direct Replacement with Active Product Status: The EGP10D-E3/54 and EGP10D-E3/73 are recommended as primary substitutes. These parts maintain the original EGP10D base product number, preserve fast recovery characteristics (50 ns trr), and are manufactured by Vishay General Semiconductor with active product status and ROHS3 compliance. The extended lower operating temperature range (-65°C) provides additional thermal margin compared to the original specification.

For Standard Recovery Applications: The 1N4003-E3/54, 1N4003-E3/73, 1N4003E-E3/54, and 1N4003E-E3/73 are suitable where standard recovery speed (>500ns) is acceptable. These parts are widely available from Vishay with high inventory levels and active product status. Forward voltage specification is 1.1 V @ 1 A, which is 0.1 V higher than the original part.

For Extended Temperature Range: The 1N3611GP-E3/73 offers an extended upper operating temperature limit (175°C versus 150°C) while maintaining DO-41 packaging and ROHS3 compliance. This part is suitable for applications requiring wider thermal operating margins.

Compliance Considerations: All recommended substitutes carry ROHS3 compliance and REACH Unaffected status, matching the original part's regulatory classification. The 1N3611 from Microchip Technology is RoHS non-compliant and should be selected only where regulatory requirements permit.

Frequently Asked Questions (FAQ)

Q: Can the 1N4003 series replace the EGP10D-TP directly? A: The 1N4003 series (1N4003-E3/54, 1N4003-E3/73, 1N4003E-E3/54, 1N4003E-E3/73) shares identical voltage (200 V), current (1 A), and package (DO-41) specifications. The primary difference is recovery speed classification: 1N4003 parts are standard recovery (>500ns) while EGP10D-TP is fast recovery (≤500ns). Substitution is valid where standard recovery performance is acceptable.

Q: What is the difference between fast recovery and standard recovery diodes? A: Recovery speed refers to the time required for a diode to transition from forward conduction to reverse blocking. Fast recovery diodes (≤500ns, 50 ns trr for EGP10D) switch faster and generate less reverse current, making them suitable for high-frequency switching applications. Standard recovery diodes (>500ns) are adequate for lower-frequency rectification and general-purpose applications.

Q: Why is forward voltage (Vf) different among substitutes? A: Forward voltage variation reflects manufacturing differences and design optimization. The EGP10D-TP specifies 1 V @ 1 A, while 1N4003 variants specify 1.1 V @ 1 A. The EGP10D-E3 series specifies 950 mV @ 1 A. These differences are within normal device tolerance and do not prevent functional substitution in most applications.

Q: Are all substitute parts ROHS3 compliant? A: All recommended substitutes except the 1N3611 (Microchip Technology) are ROHS3 compliant. The 1N3611 is RoHS non-compliant and should be selected only where regulatory requirements permit non-compliant components.

Q: Can I use the 1N3611 in place of EGP10D-TP? A: The 1N3611 provides electrical equivalence (200 V, 1 A) but uses axial package format (A, Axial) rather than DO-41. Substitution is valid where axial package format is mechanically compatible with the circuit board layout. The 1N3611 is RoHS non-compliant.

Q: What is the difference between DO-41 and DO-204AL packaging? A: DO-41 and DO-204AL are equivalent designations for the same through-hole axial package format. Both terms refer to a cylindrical component with leads at each end, suitable for through-hole mounting on printed circuit boards.

Q: Should I select EGP10D-E3 series or 1N4003 series? A: Select EGP10D-E3 series (EGP10D-E3/53, EGP10D-E3/54, EGP10D-E3/73) for applications requiring fast recovery characteristics and lower forward voltage. Select 1N4003 series for general-purpose rectification where standard recovery is acceptable and where maximum component availability is prioritized.

Q: What does the suffix (-E3/54, -E3/73, -E3/53) indicate? A: The suffix indicates packaging and tape configuration for automated assembly. -E3/54 and -E3/53 refer to cut tape (CT) packaging, while -E3/73 refers to alternative tape configuration. These suffixes do not affect electrical performance or functional equivalence.

Q: Is the extended temperature range of EGP10D-E3 (-65°C to 150°C) significant? A: The extended lower temperature limit (-65°C versus -55°C) provides additional thermal margin for applications operating in cold environments. This specification difference does not prevent substitution in applications operating within the original -55°C to 150°C range.

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