EGP10B-M3/54 Equivalent & Substitute Parts

Part Overview

The EGP10B-M3/54 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) through-hole axial package. This part is classified as obsolete, which necessitates identification of active equivalent and substitute components for ongoing design and procurement requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging and supplier options.

Key Parameters

Parameter	EGP10B-M3/54 Specification
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	50 ns
Current - Reverse Leakage @ Vr	5 µA @ 100 V
Capacitance @ Vr, F	22 pF @ 4V, 1MHz
Mounting Type	Through Hole
Package / Case	DO-204AL, DO-41, Axial
Operating Temperature - Junction	-65°C ~ 150°C
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the EGP10B-M3/54 are grouped based on strict electrical and mechanical parameter compatibility. The primary substitution criteria are:

Mandatory Electrical Parameters:

Voltage - DC Reverse (Vr) (Max): 100 V minimum
Current - Average Rectified (Io): 1 A minimum
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, or Axial compatible

Secondary Electrical Parameters (Performance Characteristics):

Voltage - Forward (Vf) (Max) @ If: Acceptable range 950 mV to 1.76 V @ 1 A
Speed: Fast Recovery ≤ 500ns or Standard Recovery > 500ns
Reverse Recovery Time (trr): 30 ns to 200 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Operating Temperature - Junction: -65°C to -55°C minimum, 150°C to 175°C maximum

Compliance Parameters:

RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

Substitute parts meeting all mandatory electrical parameters and compliance requirements are classified as direct equivalents. Parts with identical electrical specifications but different packaging formats (Tape & Reel, Bulk, Cut Tape) are functionally equivalent for circuit applications.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	Speed	trr	Package	Temp Range	Status	RoHS
EGP10B-M3/54	Vishay	100 V	1 A	950 mV @ 1 A	Fast ≤ 500ns	50 ns	DO-204AL	-65°C ~ 150°C	Obsolete	ROHS3
EGP10B-E3/54	Vishay	100 V	1 A	950 mV @ 1 A	Fast ≤ 500ns	50 ns	DO-204AL	-65°C ~ 150°C	Active	ROHS3
1N4002G A0G	Taiwan Semiconductor	100 V	1 A	1 V @ 1 A	Standard > 500ns	—	DO-204AL	-55°C ~ 150°C	Active	ROHS3
1N4002G B0G	Taiwan Semiconductor	100 V	1 A	1 V @ 1 A	Standard > 500ns	—	DO-204AL	-55°C ~ 150°C	Active	ROHS3
1N4934GHA0G	Taiwan Semiconductor	100 V	1 A	1.2 V @ 1 A	Fast ≤ 500ns	200 ns	DO-204AL	-55°C ~ 150°C	Active	ROHS3
1N6077	Microchip Technology	100 V	1.3 A	1.76 V @ 18.8 A	Fast ≤ 500ns	30 ns	A, Axial	-65°C ~ 155°C	Active	Non-compliant
HER102G B0G	Taiwan Semiconductor	100 V	1 A	1 V @ 1 A	Fast ≤ 500ns	50 ns	DO-204AL	-55°C ~ 150°C	Active	ROHS3
MURA210T3G	onsemi	100 V	2 A	940 mV @ 2 A	Fast ≤ 500ns	30 ns	SMA	-65°C ~ 175°C	Active	ROHS3
PR1002G-T	Diodes Incorporated	100 V	1 A	1.3 V @ 1 A	Fast ≤ 500ns	150 ns	DO-41	-65°C ~ 150°C	Active	ROHS3
SF12GHR1G	Taiwan Semiconductor	100 V	1 A	950 mV @ 1 A	Fast ≤ 500ns	35 ns	DO-204AL	-55°C ~ 150°C	Active	ROHS3
UF1002-T	Diodes Incorporated	100 V	1 A	1 V @ 1 A	Fast ≤ 500ns	50 ns	DO-41	-65°C ~ 150°C	Active	ROHS3

Engineering Selection Recommendations

Parametric Equivalent - Direct Replacement:

EGP10B-E3/54 (Vishay) is the direct parametric equivalent to EGP10B-M3/54. Both parts share identical electrical specifications (100 V, 1 A, 950 mV forward voltage, 50 ns reverse recovery time) and operating temperature range (-65°C ~ 150°C). The primary difference is packaging format: EGP10B-E3/54 is supplied in Tape & Reel format versus the obsolete part's standard packaging. This part is active and ROHS3 compliant, making it the preferred replacement for direct circuit substitution.

Fast Recovery Equivalents - Active Status:

SF12GHR1G (Taiwan Semiconductor) and UF1002-T (Diodes Incorporated) provide fast recovery characteristics matching the original specification (≤ 500ns). SF12GHR1G offers forward voltage of 950 mV @ 1 A and reverse recovery time of 35 ns, with automotive-grade qualification (AEC-Q101). UF1002-T provides 1 V forward voltage @ 1 A with 50 ns reverse recovery time. Both are ROHS3 compliant and active products.

Standard Recovery Alternatives - Active Status:

1N4002G A0G and 1N4002G B0G (Taiwan Semiconductor) are active alternatives with standard recovery characteristics (> 500ns). These parts maintain 100 V reverse voltage and 1 A current ratings with 1 V forward voltage @ 1 A. Operating temperature range is -55°C ~ 150°C. Both are ROHS3 compliant and suitable for applications where fast recovery is not required.

Fast Recovery with Automotive Qualification:

1N4934GHA0G (Taiwan Semiconductor) provides fast recovery (≤ 500ns) with automotive-grade qualification (AEC-Q101). Forward voltage is 1.2 V @ 1 A with 200 ns reverse recovery time. Operating temperature range is -55°C ~ 150°C. ROHS3 compliant.

Higher Current Capability:

1N6077 (Microchip Technology) offers increased current rating of 1.3 A while maintaining 100 V reverse voltage. Fast recovery characteristics (≤ 500ns) with 30 ns reverse recovery time. Operating temperature range extends to -65°C ~ 155°C. Note: This part is RoHS non-compliant.

Surface Mount Alternative:

MURA210T3G (onsemi) is a surface-mount option in SMA package with 2 A current rating and 100 V reverse voltage. Forward voltage is 940 mV @ 2 A with 30 ns reverse recovery time. Operating temperature range is -65°C ~ 175°C. ROHS3 compliant. This part is suitable only for applications requiring surface-mount technology.

Frequently Asked Questions (FAQ)

Q: Can EGP10B-E3/54 directly replace EGP10B-M3/54 in existing designs?

A: Yes. EGP10B-E3/54 is a parametric equivalent with identical electrical specifications (100 V, 1 A, 950 mV forward voltage, 50 ns reverse recovery time) and operating temperature range (-65°C ~ 150°C). The only difference is packaging format (Tape & Reel versus standard). Both are through-hole DO-204AL packages with identical pin configurations.

Q: What is the difference between fast recovery and standard recovery diodes in this comparison?

A: Fast recovery diodes have reverse recovery time ≤ 500ns, while standard recovery diodes exceed 500ns. The EGP10B-M3/54 specifies fast recovery with 50 ns reverse recovery time. Substitutes like 1N4002G series offer standard recovery (> 500ns). Fast recovery diodes are preferred in high-frequency switching applications; standard recovery diodes are suitable for lower-frequency rectification.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed are ROHS3 compliant except 1N6077 (Microchip Technology), which is RoHS non-compliant. For applications requiring RoHS compliance, use EGP10B-E3/54, 1N4002G A0G, 1N4002G B0G, 1N4934GHA0G, HER102G B0G, MURA210T3G, PR1002G-T, SF12GHR1G, or UF1002-T.

Q: What is the minimum operating temperature range for substitute parts?

A: The original EGP10B-M3/54 operates from -65°C to 150°C. Most substitute parts maintain the -65°C minimum (EGP10B-E3/54, 1N6077, PR1002G-T, UF1002-T). Taiwan Semiconductor and onsemi parts typically specify -55°C minimum. For applications requiring -65°C operation, select parts explicitly rated to that temperature.

Q: Can MURA210T3G replace EGP10B-M3/54?

A: MURA210T3G is not a direct replacement. While it maintains 100 V reverse voltage and fast recovery characteristics, it is a surface-mount device in SMA package, whereas EGP10B-M3/54 is through-hole DO-204AL. Additionally, MURA210T3G is rated for 2 A current. Use MURA210T3G only in designs specifically requiring surface-mount technology.

Q: Which substitute offers the closest electrical match to the original part?

A: EGP10B-E3/54 (Vishay) provides the closest electrical match with identical specifications: 100 V reverse voltage, 1 A current, 950 mV forward voltage @ 1 A, fast recovery ≤ 500ns, and 50 ns reverse recovery time. SF12GHR1G also matches forward voltage (950 mV @ 1 A) and offers 35 ns reverse recovery time with automotive qualification.

Q: Are there packaging format options for through-hole applications?

A: Yes. All substitute parts except MURA210T3G are available in through-hole configurations. EGP10B-E3/54 is supplied in Tape & Reel format. 1N4002G series, 1N4934GHA0G, HER102G B0G, PR1002G-T, SF12GHR1G, and UF1002-T are available in various through-hole packaging formats (Tape & Box, Bulk, Cut Tape, standard packaging). Verify specific packaging availability with supplier.

Q: What is the significance of AEC-Q101 qualification on 1N4934GHA0G and SF12GHR1G?

A: AEC-Q101 is an automotive electronics qualification standard. Parts bearing this qualification have undergone additional reliability testing for automotive applications. 1N4934GHA0G and SF12GHR1G are suitable for automotive-grade designs requiring this certification. Non-automotive applications do not require this qualification.

Q: How does forward voltage affect circuit performance?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. EGP10B-M3/54 specifies 950 mV @ 1 A. Substitutes range from 940 mV to 1.76 V @ 1 A. Higher forward voltage results in greater power dissipation and heat generation. For applications sensitive to voltage drop, select substitutes with lower forward voltage specifications (EGP10B-E3/54, MURA210T3G, SF12GHR1G at 950 mV or less).

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