EGP10B Equivalent & Substitute Parts

Part Overview

The EGP10B is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole axial package. This device features fast recovery characteristics with a reverse recovery time of 50 ns and operates across a junction temperature range of -65°C to 150°C. The EGP10B is classified as "Not For New Designs," indicating it is an established product no longer recommended for new circuit development. Equivalent and substitute parts are necessary for applications requiring active product status, improved performance characteristics, or alternative packaging configurations while maintaining electrical compatibility within the 100 V / 1 A rectifier diode category.

Substiute Parts

EGP10B
onsemiIn Stock: 6037EGP10B Datasheet
EGP10B
Current Part
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1N4002G A0G
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1N4002G B0G
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Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Mounting Type Through Hole -
Package / Case DO-204AL, DO-41, Axial -
Operating Temperature - Junction -65 to 150 °C
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the EGP10B is determined by strict electrical and mechanical compatibility within the following parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
  • Current - Average Rectified (Io): Must equal or exceed 1 A
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial configurations

Secondary Compatibility Factors:

  • Reverse Recovery Time (trr): Fast recovery characteristics (≤ 500 ns) preferred for performance equivalence
  • Voltage - Forward (Vf): Operating point compatibility at 1 A
  • Current - Reverse Leakage: Leakage characteristics at rated voltage
  • Operating Temperature Range: Junction temperature capability
  • Product Status: Active status preferred for new applications
  • RoHS Compliance: ROHS3 compliance maintained

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all primary criteria with active product status) and Compatible Alternatives (meeting primary criteria with variations in secondary parameters such as recovery speed or forward voltage).

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] Speed trr [ns] Ir @ Vr [µA] Package Tj Range [°C] Product Status
EGP10B onsemi 100 1 950 @ 1 A Fast Recovery ≤ 500ns 50 5 @ 100 V DO-41 -65 to 150 Not For New Designs
MUR110G onsemi 100 1 875 @ 1 A Fast Recovery ≤ 500ns 35 2 @ 100 V Axial -65 to 175 Active
MUR110RLG onsemi 100 1 875 @ 1 A Fast Recovery ≤ 500ns 35 2 @ 100 V Axial -65 to 175 Active
1N4002-E3/53 Vishay General Semiconductor - Diodes Division 100 1 1100 @ 1 A Standard Recovery >500ns - 5 @ 100 V DO-204AL (DO-41) -50 to 150 Active
1N4002-E3/54 Vishay General Semiconductor - Diodes Division 100 1 1100 @ 1 A Standard Recovery >500ns - 5 @ 100 V DO-204AL (DO-41) -55 to 150 Active
1N4002E-E3/53 Vishay General Semiconductor - Diodes Division 100 1 1100 @ 1 A Standard Recovery >500ns - 5 @ 100 V DO-204AL (DO-41) -50 to 150 Active
1N4002G A0G Taiwan Semiconductor Corporation 100 1 1000 @ 1 A Standard Recovery >500ns - 5 @ 100 V DO-204AL (DO-41) -55 to 150 Active
1N4002G B0G Taiwan Semiconductor Corporation 100 1 1000 @ 1 A Standard Recovery >500ns - 5 @ 100 V DO-204AL (DO-41) -55 to 150 Active
1N4934-E3/54 Vishay General Semiconductor - Diodes Division 100 1 1200 @ 1 A Fast Recovery ≤ 500ns 200 5 @ 100 V DO-204AL (DO-41) -50 to 150 Active
1N4934GP-AP Micro Commercial Co 100 1 1200 @ 1 A Fast Recovery ≤ 500ns 200 5 @ 100 V DO-41 -55 to 150 Active
1N6077 Microchip Technology 100 1.3 1760 @ 18.8 A Fast Recovery ≤ 500ns 30 5 @ 100 V Axial -65 to 155 Active

Engineering Selection Recommendations

Direct Electrical Equivalents (Active Product Status):

The MUR110G and MUR110RLG (onsemi SWITCHMODE™ series) provide the closest electrical equivalence to the EGP10B. Both devices maintain 100 V / 1 A ratings with improved fast recovery characteristics (35 ns trr versus 50 ns), lower forward voltage (875 mV versus 950 mV at 1 A), and reduced reverse leakage (2 µA versus 5 µA at 100 V). Operating temperature range extends to 175°C. Both are ROHS3 compliant and carry Active product status. MUR110G is supplied in Bulk packaging, while MUR110RLG is supplied in Cut Tape (CT) packaging.

Compatible Alternatives with Standard Recovery Characteristics:

The 1N4002 series (Vishay 1N4002-E3/53, 1N4002-E3/54, 1N4002E-E3/53) and Taiwan Semiconductor 1N4002G variants provide 100 V / 1 A ratings with standard recovery characteristics (>500 ns). These devices exhibit higher forward voltage (1.0 to 1.1 V at 1 A) and lack specified reverse recovery time data. All variants are ROHS3 compliant with Active product status. Operating temperature ranges vary between -50°C to -55°C minimum and 150°C maximum. These parts are suitable for applications where fast recovery is not a critical requirement.

Compatible Alternatives with Fast Recovery Characteristics:

The 1N4934-E3/54 (Vishay) and 1N4934GP-AP (Micro Commercial Co) provide 100 V / 1 A ratings with fast recovery characteristics (200 ns trr). Forward voltage is elevated at 1.2 V at 1 A. Both are ROHS3 compliant with Active product status. The 1N4934GP-AP maintains the DO-41 package configuration of the EGP10B.

Higher Current Alternative:

The 1N6077 (Microchip Technology) provides 100 V at 1.3 A average rectified current with fast recovery (30 ns trr) and is suitable for applications requiring higher current capacity. This device is RoHS non-compliant and carries Active product status. Operating temperature range extends to 155°C.

Selection Basis:

All substitute parts maintain ROHS3 compliance and Active product status, with the exception of 1N6077 (RoHS non-compliant). Substitution selection depends on specific application requirements: fast recovery performance, forward voltage characteristics, operating temperature range, and package configuration (DO-41 axial versus DO-204AL).

Frequently Asked Questions (FAQ)

Q: Can the MUR110G or MUR110RLG directly replace the EGP10B in existing designs?

A: Yes. Both MUR110 variants meet or exceed all primary electrical specifications (100 V reverse voltage, 1 A average rectified current) and maintain through-hole axial mounting. The MUR110 series offers improved performance with lower forward voltage (875 mV versus 950 mV) and faster recovery time (35 ns versus 50 ns). Both are ROHS3 compliant and carry Active product status. Verify PCB layout compatibility with the axial package configuration.

Q: What is the difference between fast recovery and standard recovery diodes in this category?

A: Fast recovery diodes (EGP10B, MUR110G, MUR110RLG, 1N4934 series, 1N6077) exhibit reverse recovery times ≤ 500 ns, enabling faster switching and reduced switching losses in high-frequency applications. Standard recovery diodes (1N4002 series) have reverse recovery times > 500 ns and are suitable for lower-frequency rectification applications. The EGP10B specifies 50 ns recovery time, while the 1N4002 series does not specify recovery time data.

Q: Are the 1N4002 series parts suitable substitutes for the EGP10B?

A: The 1N4002 series (1N4002-E3/53, 1N4002-E3/54, 1N4002E-E3/53, 1N4002G variants) meet the primary electrical criteria (100 V, 1 A) and are ROHS3 compliant with Active product status. However, these parts feature standard recovery characteristics (>500 ns) rather than fast recovery, and exhibit higher forward voltage (1.0 to 1.1 V at 1 A versus 950 mV). Substitution is valid for low-frequency rectification applications where fast recovery is not required.

Q: What packaging options are available among the substitute parts?

A: Substitute parts are available in three package configurations: DO-41 axial (EGP10B, 1N4934GP-AP), DO-204AL (1N4002 series, 1N4934-E3/54), and Axial (MUR110G, MUR110RLG, 1N6077). The EGP10B uses DO-41 axial packaging. MUR110 variants use Axial packaging, which is mechanically compatible with DO-41 through-hole mounting. Verify PCB footprint compatibility before substitution.

Q: Why is the EGP10B marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that onsemi no longer recommends this part for new circuit development. Active alternatives such as MUR110G, MUR110RLG, and the 1N4002 series are available with equivalent or improved electrical characteristics and current manufacturing support.

Q: Does the 1N6077 provide any advantages over the EGP10B?

A: The 1N6077 (Microchip Technology) provides higher average rectified current (1.3 A versus 1 A) and faster recovery time (30 ns versus 50 ns). However, the 1N6077 is RoHS non-compliant and exhibits significantly higher forward voltage (1.76 V at 18.8 A, not directly comparable at 1 A). This part is suitable only for applications requiring the higher current rating and where RoHS compliance is not mandated.

Q: What is the significance of reverse leakage current differences among these parts?

A: Reverse leakage current (Ir) represents the small current flowing through the diode in the reverse-biased state. The EGP10B specifies 5 µA at 100 V. The MUR110 series reduces this to 2 µA, indicating lower leakage and potentially better performance in high-impedance circuits. The 1N4002 and 1N4934 series maintain 5 µA leakage. For most applications, these differences are negligible; however, precision analog circuits may benefit from lower leakage characteristics.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts except the 1N6077 are ROHS3 compliant. The 1N6077 is marked as RoHS non-compliant. Verify RoHS compliance requirements for your application before selecting a substitute part.

Q: What is the operating temperature range consideration for substitution?

A: The EGP10B operates from -65°C to 150°C junction temperature. The MUR110 series extends the upper limit to 175°C. The 1N4002 series operates from -50°C to -55°C minimum to 150°C maximum. The 1N6077 operates from -65°C to 155°C. Select a substitute part with an operating temperature range that encompasses your application's thermal requirements.

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