EGP10A-M3/73 Equivalent & Substitute Parts

Part Overview

The EGP10A-M3/73 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 50 V DC reverse voltage and 1 A average rectified current in a through-hole DO-204AL (DO-41) axial package. This part is classified as obsolete, which necessitates identification of active equivalent and substitute components for new designs and ongoing production requirements. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within acceptable parameter tolerances for the application.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 50 V
Capacitance @ Vr, F	22	pF @ 4V, 1MHz
Mounting Type	Through Hole	—
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction	-65 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the EGP10A-M3/73 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 50 V
Current - Average Rectified (Io): Must equal or exceed 1 A
Voltage - Forward (Vf) (Max) @ If: Must not exceed 950 mV @ 1 A for direct equivalence; standard recovery diodes may reach 1 V @ 1 A
Current - Reverse Leakage @ Vr: Must not exceed 5 µA @ 50 V

Recovery Characteristics:

Speed: Fast recovery (≤ 500ns, > 200mA) is the primary specification; standard recovery (> 500ns) diodes are functional substitutes with different switching behavior
Reverse Recovery Time (trr): 50 ns for fast recovery types; standard recovery types exhibit longer trr values

Mechanical & Environmental Compatibility:

Mounting Type: Through Hole required for direct board-level substitution
Package / Case: DO-204AL (DO-41) axial package for through-hole applications; surface-mount alternatives (SMA) require circuit redesign
Operating Temperature - Junction: Must support -65°C to 150°C minimum range; extended range to 175°C is acceptable
RoHS Status: ROHS3 Compliant required for regulatory compliance

Substitute parts are grouped into three categories: parametric equivalents (identical electrical specifications, active status), upgrade alternatives (enhanced current rating or recovery characteristics), and functional substitutes (standard recovery with acceptable parameter variations).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Mounting	Temp Range [°C]	Status
EGP10A-M3/73	Vishay	50	1	950 @ 1A	Fast ≤ 500ns	50	5 @ 50V	DO-204AL	Through Hole	-65 to 150	Obsolete
EGP10A-E3/73	Vishay	50	1	950 @ 1A	Fast ≤ 500ns	50	5 @ 50V	DO-204AL	Through Hole	-65 to 150	Active
1N4001G	Taiwan Semiconductor	50	1	1000 @ 1A	Standard > 500ns	—	5 @ 50V	DO-204AL	Through Hole	-55 to 150	Active
1N4001-BP	Micro Commercial Co	50	1	1000 @ 1A	Standard > 500ns	2000	5 @ 50V	DO-204AL	Through Hole	-55 to 150	Active
1N4001G A0G	Taiwan Semiconductor	50	1	1000 @ 1A	Standard > 500ns	—	5 @ 50V	DO-204AL	Through Hole	-55 to 150	Active
1N4001G R0G	Taiwan Semiconductor	50	1	1000 @ 1A	Standard > 500ns	—	5 @ 50V	DO-204AL	Through Hole	-55 to 150	Discontinued
1N4933GP-AP	Micro Commercial Co	50	1	1200 @ 1A	Fast ≤ 500ns	200	5 @ 50V	DO-204AL	Through Hole	-55 to 150	Active
1N6076	Microchip Technology	50	1.3	1760 @ 18.8A	Fast ≤ 500ns	30	5 @ 50V	A, Axial	Through Hole	-65 to 155	Active
HER101G A0G	Taiwan Semiconductor	50	1	1000 @ 1A	Fast ≤ 500ns	50	5 @ 50V	DO-204AL	Through Hole	-55 to 150	Active
HER101G R1G	Taiwan Semiconductor	50	1	1000 @ 1A	Fast ≤ 500ns	50	5 @ 50V	DO-204AL	Through Hole	-55 to 150	Active
MURA105T3G	onsemi	50	2	875 @ 1A	Fast ≤ 500ns	30	2 @ 50V	DO-214AC, SMA	Surface Mount	-65 to 175	Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

EGP10A-E3/73 is the direct parametric equivalent to EGP10A-M3/73. Both parts are manufactured by Vishay General Semiconductor - Diodes Division with identical electrical specifications (50 V, 1 A, 950 mV forward voltage, 50 ns reverse recovery time, fast recovery characteristic). EGP10A-E3/73 is active and ROHS3 compliant, making it the primary replacement for obsolete EGP10A-M3/73 in through-hole applications.

Fast Recovery Through-Hole Alternatives:

HER101G A0G and HER101G R1G (Taiwan Semiconductor) provide fast recovery characteristics (50 ns trr) matching the original specification. Forward voltage is 1000 mV @ 1 A, which is within acceptable tolerance for most applications. Both are active, ROHS3 compliant, and available in DO-204AL through-hole package. Operating temperature range is -55°C to 150°C.

1N4933GP-AP (Micro Commercial Co) offers fast recovery (200 ns trr) with 1 A rating in DO-204AL package. Forward voltage is 1200 mV @ 1 A, representing a higher forward drop. This part is active and ROHS3 compliant.

Standard Recovery Through-Hole Alternatives:

1N4001G, 1N4001G A0G, and 1N4001G R0G (Taiwan Semiconductor) are standard recovery diodes (> 500ns) with 50 V, 1 A ratings in DO-204AL package. Forward voltage is 1000 mV @ 1 A. These parts are suitable for applications where switching speed is not critical. 1N4001G and 1N4001G A0G are active; 1N4001G R0G is discontinued at DiGi Electronics.

1N4001-BP (Micro Commercial Co) is a standard recovery alternative with 2000 ns reverse recovery time, 50 V, 1 A rating in DO-204AL package. This part is active and ROHS3 compliant.

Enhanced Current Rating:

1N6076 (Microchip Technology) provides 1.3 A average rectified current at 50 V with fast recovery characteristics (30 ns trr). Package is A, Axial (through-hole). Operating temperature range extends to 155°C. This part is active but RoHS non-compliant. Forward voltage specification is provided at 18.8 A, not directly comparable to 1 A rating.

Surface-Mount Alternative:

MURA105T3G (onsemi) is a 50 V, 2 A surface-mount diode in SMA package with fast recovery (30 ns trr) and superior reverse leakage (2 µA @ 50 V). Forward voltage is 875 mV @ 1 A. Operating temperature range is -65°C to 175°C. This part requires circuit redesign for surface-mount implementation and is not a direct board-level substitute.

Compliance & Availability:

All recommended through-hole alternatives are ROHS3 compliant and REACH unaffected. EGP10A-E3/73 is the preferred replacement due to identical specifications and active status. For applications tolerating standard recovery characteristics, 1N4001G variants offer high availability and cost efficiency.

Frequently Asked Questions (FAQ)

Q: Can EGP10A-E3/73 be used as a direct replacement for EGP10A-M3/73?

A: Yes. EGP10A-E3/73 is a parametric equivalent with identical electrical specifications: 50 V reverse voltage, 1 A average rectified current, 950 mV forward voltage @ 1 A, 50 ns reverse recovery time, and fast recovery characteristic. Both are through-hole DO-204AL (DO-41) axial packages. EGP10A-E3/73 is active and ROHS3 compliant.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery time ≤ 500 ns and are suitable for high-frequency switching applications. Standard recovery diodes have reverse recovery time > 500 ns and are used in low-frequency rectification where switching speed is not critical. The EGP10A-M3/73 specifies fast recovery (50 ns trr). Standard recovery alternatives such as 1N4001G (> 500ns) are functional substitutes but exhibit different switching behavior.

Q: Can I use 1N4001G instead of EGP10A-M3/73?

A: 1N4001G is a functional substitute with identical voltage and current ratings (50 V, 1 A) and acceptable reverse leakage (5 µA @ 50 V). However, it is a standard recovery diode (> 500ns trr) versus the fast recovery characteristic (50 ns trr) of EGP10A-M3/73. Forward voltage is 1000 mV @ 1 A versus 950 mV. Use 1N4001G only in applications where switching speed is not critical. Both are through-hole DO-204AL packages and ROHS3 compliant.

Q: Why is MURA105T3G listed as a substitute if it is surface-mount?

A: MURA105T3G meets the electrical specifications (50 V, 2 A, fast recovery, 875 mV forward voltage @ 1 A) but requires circuit redesign due to its SMA surface-mount package versus the through-hole DO-204AL package of EGP10A-M3/73. It is included for reference in applications where surface-mount conversion is feasible.

Q: What is the operating temperature range difference between EGP10A-M3/73 and its substitutes?

A: EGP10A-M3/73 operates from -65°C to 150°C. Most through-hole substitutes (1N4001G, 1N4001-BP, HER101G variants) operate from -55°C to 150°C, representing a 10°C reduction in low-temperature capability. 1N6076 extends to 155°C. MURA105T3G extends to 175°C. Verify application temperature requirements before substitution.

Q: Are all recommended substitutes ROHS3 compliant?

A: All through-hole substitutes listed are ROHS3 compliant except 1N6076, which is RoHS non-compliant. Verify regulatory requirements for your application. EGP10A-E3/73, 1N4001G variants, 1N4001-BP, 1N4933GP-AP, HER101G variants, and MURA105T3G are all ROHS3 compliant.

Q: What is the difference between 1N4001G, 1N4001G A0G, and 1N4001G R0G?

A: These are variants of the same base part number 1N4001 from Taiwan Semiconductor Corporation with identical electrical specifications (50 V, 1 A, 1000 mV forward voltage @ 1 A, standard recovery). The suffix designates packaging and tape configuration: A0G indicates standard packaging, R0G indicates cut tape. 1N4001G and 1N4001G A0G are active; 1N4001G R0G is discontinued at DiGi Electronics. All are through-hole DO-204AL packages.

Q: Can I use 1N4933GP-AP if I need fast recovery characteristics?

A: Yes. 1N4933GP-AP is a fast recovery diode (200 ns trr) with 50 V, 1 A rating in DO-204AL through-hole package. Forward voltage is 1200 mV @ 1 A, which is higher than EGP10A-M3/73 (950 mV). This part is active and ROHS3 compliant. Use it in applications where the higher forward voltage drop is acceptable.

Q: What is the reverse leakage current specification and why does it matter?

A: Reverse leakage current is the small current that flows through a reverse-biased diode. EGP10A-M3/73 specifies 5 µA @ 50 V. Most substitutes maintain this specification. MURA105T3G specifies 2 µA @ 50 V, which is superior. Lower reverse leakage is beneficial in precision analog circuits and high-impedance applications. For standard rectification, the difference is negligible.

Q: Is 1N6076 suitable as a replacement despite its higher current rating?

A: 1N6076 is rated for 1.3 A average rectified current at 50 V, exceeding the 1 A requirement of EGP10A-M3/73. It provides fast recovery (30 ns trr) and extended temperature range (-65°C to 155°C). However, 1N6076 is RoHS non-compliant and uses A, Axial package (different from DO-204AL). Use 1N6076 only if RoHS non-compliance is acceptable and package compatibility is verified.

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