EGF1C Equivalent & Substitute Parts

Part Overview

The EGF1C is a general-purpose rectifier diode manufactured by onsemi, rated for 150 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued support, design flexibility, or alternative sourcing options while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	150	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 1 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	10	µA @ 150 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AC, SMA	—
Operating Temperature - Junction	-65 to 175	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the EGF1C is determined by the following critical parameters:

Electrical Compatibility Requirements:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 150 V
Current - Average Rectified (Io): Must equal or exceed 1 A
Mounting Type: Must be Surface Mount
Package / Case: Must be DO-214AC or SMA equivalent

Performance Characteristics:

Speed classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): Typically 25–50 ns for fast recovery diodes
Forward voltage drop: Typically 700 mV to 1 V @ 1 A

Compliance & Environmental:

RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Operating Temperature Range: Minimum -55°C to 150°C junction temperature

Substitute parts meeting these criteria are grouped into two categories: Direct Equivalents (150 V, 1 A, standard technology) and Enhanced Alternatives (150 V or higher voltage rating, improved performance characteristics, or alternative diode technologies such as Super Barrier).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	trr [ns]	Ir @ Vr [µA]	Tj (Max) [°C]	Product Status
EGF1C	onsemi	150	1	1000 @ 1A	50	10 @ 150V	175	Not For New Designs
ES1C	Taiwan Semiconductor Corporation	150	1	950 @ 1A	35	5 @ 150V	150	Active
CURA103-G	Comchip Technology	200	1	1000 @ 1A	50	5 @ 200V	150	Active
ES1C-13-F	Diodes Incorporated	150	1	920 @ 1A	25	5 @ 150V	150	Active
ES1C-E3/61T	Vishay General Semiconductor - Diodes Division	150	1	920 @ 1A	25	5 @ 150V	150	Active
ES1C-TP	Micro Commercial Co	150	1	—	50	5 @ 150V	150	Active
ESH1C-E3/5AT	Vishay General Semiconductor - Diodes Division	150	1	900 @ 1A	25	1 @ 150V	175	Active
SBR1U150SA-13	Diodes Incorporated	150	1	700 @ 1A	—	100 @ 150V	150	Active
SBR2U150SA-13	Diodes Incorporated	150	2	800 @ 2A	—	75 @ 150V	175	Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for Most Applications):

The following parts provide direct electrical and mechanical compatibility with the EGF1C while offering active product status:

ES1C-13-F (Diodes Incorporated): Meets all electrical requirements with improved reverse recovery time (25 ns vs. 50 ns) and lower forward voltage (920 mV vs. 1000 mV). Active product status with ROHS3 compliance.
ES1C-E3/61T (Vishay General Semiconductor - Diodes Division): Identical electrical specifications to ES1C-13-F with the same performance improvements. Highest inventory availability (48,300 pcs). Active product status with ROHS3 compliance.
ESH1C-E3/5AT (Vishay General Semiconductor - Diodes Division): Offers superior reverse leakage performance (1 µA vs. 10 µA) and maintains the full operating temperature range of the original (-55°C to 175°C). Active product status with ROHS3 compliance.

Enhanced Alternatives:

CURA103-G (Comchip Technology): Provides higher voltage rating (200 V vs. 150 V) for applications requiring additional voltage margin. Maintains 1 A current rating and fast recovery characteristics. Active product status with ROHS3 compliance.
SBR1U150SA-13 (Diodes Incorporated): Super Barrier technology delivers significantly lower forward voltage (700 mV vs. 1000 mV), reducing power dissipation. Includes AEC-Q101 automotive qualification. Active product status with ROHS3 compliance.
SBR2U150SA-13 (Diodes Incorporated): Rated for 2 A current (vs. 1 A), providing design headroom for higher current applications. Super Barrier technology with lower forward voltage. Active product status with ROHS3 compliance.

Compatibility Considerations:

All recommended substitutes maintain the DO-214AC (SMA) surface mount package, ensuring mechanical and PCB layout compatibility. All parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original specification.

Frequently Asked Questions (FAQ)

Q: Can I use ES1C-13-F as a direct replacement for EGF1C?

A: Yes. ES1C-13-F meets all electrical and mechanical requirements: 150 V reverse voltage, 1 A current rating, DO-214AC (SMA) package, and fast recovery characteristics. It offers improved performance with lower forward voltage (920 mV vs. 1000 mV) and faster reverse recovery time (25 ns vs. 50 ns). Both are ROHS3 compliant with MSL 1 rating.

Q: What is the difference between ES1C and ES1C-13-F?

A: Both parts are rated 150 V, 1 A with DO-214AC (SMA) packaging. ES1C-13-F is manufactured by Diodes Incorporated, while ES1C is manufactured by Taiwan Semiconductor Corporation. ES1C-13-F has faster reverse recovery time (25 ns vs. 35 ns) and lower forward voltage (920 mV vs. 950 mV). Both are active products with ROHS3 compliance.

Q: Why would I choose SBR1U150SA-13 over a standard rectifier diode?

A: SBR1U150SA-13 uses Super Barrier technology, delivering significantly lower forward voltage (700 mV vs. 1000 mV at 1 A). This reduces power dissipation and heat generation in the application. It includes AEC-Q101 automotive qualification. The trade-off is higher reverse leakage current (100 µA vs. 10 µA).

Q: Can I use SBR2U150SA-13 in place of EGF1C?

A: SBR2U150SA-13 is electrically compatible (150 V, DO-214AC package, ROHS3 compliant) but is rated for 2 A average rectified current instead of 1 A. It can be used as a substitute when higher current capacity is acceptable or beneficial. The Super Barrier technology provides lower forward voltage (800 mV @ 2 A). Operating temperature range extends to 175°C.

Q: What is the advantage of CURA103-G?

A: CURA103-G provides a higher voltage rating (200 V vs. 150 V) while maintaining 1 A current capacity and the same DO-214AC (SMA) package. This higher voltage margin is useful in applications with voltage transients or design margin requirements. It maintains fast recovery characteristics and ROHS3 compliance.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original EGF1C specification.

Q: What is the operating temperature range difference between EGF1C and its substitutes?

A: EGF1C operates from -65°C to 175°C junction temperature. Most substitutes operate from -55°C to 150°C, except ESH1C-E3/5AT and SBR2U150SA-13, which extend to 175°C. Verify application temperature requirements before selection.

Q: Can I use ES1C-TP as a substitute?

A: ES1C-TP meets electrical requirements (150 V, 1 A, DO-214AC package) and is an active product with ROHS3 compliance. However, inventory is limited (808 pcs). Forward voltage specification is not provided. Operating temperature range is -50°C to 150°C. Consider availability and temperature range for your application.

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