EGF1B Equivalent & Substitute Parts

Part Overview

The EGF1B is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product line. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization while maintaining electrical and mechanical compatibility.

Substiute Parts

EGF1B
onsemiIn Stock: 150567EGF1B Datasheet
EGF1B
Current Part
ES1B
YAGEOIn Stock: 65171ES1B Datasheet
ES1B
Similar
MURA110T3G
onsemiIn Stock: 80505MURA110T3G Datasheet
MURA110T3G
Similar
NRVUA110VT3G
onsemiIn Stock: 10496NRVUA110VT3G Datasheet
NRVUA110VT3G
Similar
S1B
YAGEOIn Stock: 4761S1B Datasheet
S1B
Similar
GS1B-LTP
Micro Commercial CoIn Stock: 21523GS1B-LTP Datasheet
GS1B-LTP
Direct
CGRA4002-G
Comchip TechnologyIn Stock: 967CGRA4002-G Datasheet
CGRA4002-G
Similar
ES1B-13-F
Diodes IncorporatedIn Stock: 35153ES1B-13-F Datasheet
ES1B-13-F
Similar
ES1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 27131ES1B-E3/5AT Datasheet
ES1B-E3/5AT
Similar
ES1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 70592ES1B-E3/61T Datasheet
ES1B-E3/61T
Similar
ESH1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 920ESH1B-E3/5AT Datasheet
ESH1B-E3/5AT
Similar
GF1B-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15404GF1B-E3/5CA Datasheet
GF1B-E3/5CA
Similar
GF1B-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 50211GF1B-E3/67A Datasheet
GF1B-E3/67A
Similar
RS1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 835RS1B-M3/5AT Datasheet
RS1B-M3/5AT
Similar
RS1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 894RS1B-M3/61T Datasheet
RS1B-M3/61T
Similar
RS1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1121RS1BHE3_A/H Datasheet
RS1BHE3_A/H
Similar
RS1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 795RS1BHE3_A/I Datasheet
RS1BHE3_A/I
Similar
S1B-13-F
Diodes IncorporatedIn Stock: 15133S1B-13-F Datasheet
S1B-13-F
Similar
U1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 850U1B-M3/5AT Datasheet
U1B-M3/5AT
Similar
U1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1084U1B-M3/61T Datasheet
U1B-M3/61T
Similar
US1B-13-F
Diodes IncorporatedIn Stock: 142770US1B-13-F Datasheet
US1B-13-F
Similar
US1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 62485US1B-E3/61T Datasheet
US1B-E3/61T
Similar
CMR1U-01M TR13 PBFREE
Central Semiconductor CorpIn Stock: 25248CMR1U-01M TR13 PBFREE Datasheet
CMR1U-01M TR13 PBFREE
Parametric Equivalent
CMR1U-01M TR13 TIN/LEAD
Central Semiconductor CorpIn Stock: 950CMR1U-01M TR13 TIN/LEAD Datasheet
CMR1U-01M TR13 TIN/LEAD
Parametric Equivalent
US1B-TP
Micro Commercial CoIn Stock: 56481US1B-TP Datasheet
US1B-TP
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -65 to 175 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the EGF1B is determined by the following critical parameters:

  • Voltage Rating (Vr): All substitutes must support 100 V DC reverse voltage minimum
  • Current Rating (Io): All substitutes must support 1 A average rectified current minimum
  • Package Type: All substitutes must use DO-214AC (SMA) surface mount package for mechanical and electrical compatibility
  • Forward Voltage (Vf): Substitutes with Vf ≤ 1 V @ 1 A are direct replacements; substitutes with Vf up to 920 mV provide improved performance
  • Reverse Recovery Time (trr): Substitutes with trr ≤ 50 ns maintain or improve switching characteristics
  • Reverse Leakage Current: Substitutes with leakage ≤ 10 µA @ 100 V are acceptable; lower values indicate improved performance
  • Temperature Range: Substitutes supporting -55°C to 150°C minimum are acceptable; extended ranges (-65°C to 175°C) provide additional margin
  • Compliance: All substitutes must maintain ROHS3 compliance and MSL 1 rating

Substitutes are grouped into three categories: Direct Equivalents (identical electrical specifications), Performance Upgrades (improved characteristics within the same voltage and current ratings), and Functional Alternatives (higher current ratings suitable for the same application).

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] trr [ns] Ir @ Vr [µA] Temp Range [°C] Product Status Packaging
EGF1B onsemi 100 1 1000 50 10 @ 100V -65 to 175 Not For New Designs CT & Digi-Reel
ES1B YAGEO 100 1 950 Active CT & Digi-Reel
MURA110T3G onsemi 100 1 875 30 2 @ 100V -65 to 175 Active CT & Digi-Reel
NRVUA110VT3G onsemi 100 2 875 30 2 @ 100V -65 to 175 Not For New Designs TR
S1B YAGEO 100 1 1100 Active TR
GS1B-LTP Micro Commercial Co 100 1 1000 10 @ 100V -55 to 150 Not For New Designs TR
CGRA4002-G Comchip Technology 100 1 1100 5 @ 100V -55 to 150 Active TR
ES1B-13-F Diodes Incorporated 100 1 920 25 5 @ 100V -55 to 150 Active TR
ES1B-E3/5AT Vishay General Semiconductor - Diodes Division 100 1 920 25 5 @ 100V -55 to 150 Active CT & Digi-Reel
ES1B-E3/61T Vishay General Semiconductor - Diodes Division 100 1 920 25 5 @ 100V -55 to 150 Active CT & Digi-Reel
ESH1B-E3/5AT Vishay General Semiconductor - Diodes Division 100 1 900 25 1 @ 100V -55 to 175 Active TR

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications):

GS1B-LTP from Micro Commercial Co provides electrical equivalence to EGF1B with matching 100 V, 1 A, and 1 V forward voltage specifications. However, GS1B-LTP is classified as "Not For New Designs" and has a reduced temperature range (-55°C to 150°C versus -65°C to 175°C). This part is suitable only for legacy system maintenance.

For Active Product Line Substitution:

MURA110T3G (onsemi) is the recommended primary substitute. It maintains 100 V, 1 A ratings with improved performance: forward voltage reduced to 875 mV, reverse recovery time improved to 30 ns, and reverse leakage reduced to 2 µA. MURA110T3G is Active status and supports the full -65°C to 175°C temperature range, matching EGF1B's thermal envelope.

For Enhanced Performance with Active Status:

ES1B-E3/5AT and ES1B-E3/61T (Vishay General Semiconductor - Diodes Division) offer superior electrical characteristics: 920 mV forward voltage, 25 ns reverse recovery time, and 5 µA reverse leakage. Both are Active status with Cut Tape & Digi-Reel packaging. Temperature range is -55°C to 150°C, which is acceptable for most applications but does not extend to -65°C.

ESH1B-E3/5AT (Vishay General Semiconductor - Diodes Division) provides the lowest reverse leakage current (1 µA @ 100 V) and supports the extended temperature range (-55°C to 175°C). This part is suitable for applications requiring minimal leakage and thermal margin.

For Higher Current Applications:

NRVUA110VT3G (onsemi) supports 2 A average rectified current while maintaining 100 V reverse voltage. This part is classified as "Not For New Designs" but is suitable for applications requiring increased current capacity. It includes AEC-Q101 automotive qualification.

For Cost-Optimized Alternatives:

ES1B (YAGEO) and S1B (YAGEO) are Active status alternatives with 100 V, 1 A ratings. ES1B offers 950 mV forward voltage. S1B specifies 1100 mV forward voltage. Both are available in standard packaging options.

CGRA4002-G (Comchip Technology) is Active status with 100 V, 1 A ratings and 1100 mV forward voltage. Reverse leakage is 5 µA @ 100 V.

Compliance and Certification:

All listed substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching EGF1B specifications. All parts carry EAR99 ECCN classification and HTSUS code 8541.10.0080.

Frequently Asked Questions (FAQ)

Q: Can MURA110T3G directly replace EGF1B in all applications?

A: MURA110T3G is electrically compatible with EGF1B for applications requiring 100 V, 1 A rectification. MURA110T3G provides improved performance with lower forward voltage (875 mV vs. 1000 mV) and faster reverse recovery (30 ns vs. 50 ns). Both parts use DO-214AC (SMA) surface mount packaging. MURA110T3G is Active status, whereas EGF1B is Not For New Designs. Mechanical footprint compatibility is identical.

Q: What is the difference between Cut Tape & Digi-Reel and Tape & Reel packaging?

A: Cut Tape & Digi-Reel packaging provides components on cut tape suitable for manual handling or automated pick-and-place equipment with standard reel compatibility. Tape & Reel packaging provides components on continuous reel format optimized for high-volume automated assembly. Both formats use identical DO-214AC (SMA) component packages. Selection depends on assembly process requirements and volume.

Q: Are ES1B-E3/5AT and ES1B-E3/61T interchangeable?

A: ES1B-E3/5AT and ES1B-E3/61T are electrically identical with matching 100 V, 1 A, 920 mV forward voltage, 25 ns reverse recovery time, and 5 µA reverse leakage specifications. Both are manufactured by Vishay General Semiconductor - Diodes Division and use DO-214AC (SMA) surface mount packaging. The suffix designations (-E3/5AT and -E3/61T) indicate different packaging reel configurations. Selection between these parts depends on supply chain availability and packaging format requirements.

Q: Why does NRVUA110VT3G support 2 A when EGF1B supports only 1 A?

A: NRVUA110VT3G is rated for 2 A average rectified current, providing double the current capacity of EGF1B while maintaining the same 100 V reverse voltage rating and DO-214AC (SMA) package. This higher current rating results from improved die design and thermal characteristics. NRVUA110VT3G is suitable for applications requiring increased current handling within the same voltage class and package footprint. However, NRVUA110VT3G is classified as Not For New Designs.

Q: What is the significance of reverse leakage current differences between substitutes?

A: Reverse leakage current (Ir) represents the small current flowing through the diode in reverse bias condition. EGF1B specifies 10 µA @ 100 V. Substitutes with lower reverse leakage (such as ESH1B-E3/5AT at 1 µA or MURA110T3G at 2 µA) provide improved performance in applications sensitive to leakage, including high-impedance circuits and precision analog applications. Lower leakage reduces power dissipation and improves circuit efficiency.

Q: Can I use S1B or ES1B as substitutes if they have slightly higher forward voltage?

A: S1B specifies 1100 mV forward voltage compared to EGF1B's 1000 mV maximum. ES1B specifies 950 mV forward voltage. Both are within acceptable operating ranges for general-purpose rectification applications. The 100 mV difference in S1B represents approximately 10% higher forward voltage drop, resulting in slightly increased power dissipation. ES1B provides lower forward voltage, improving efficiency. Selection depends on circuit tolerance for forward voltage variation and power dissipation requirements.

Q: What is the temperature range significance for EGF1B versus substitutes?

A: EGF1B supports -65°C to 175°C junction temperature range. Most active substitutes (ES1B-E3/5AT, ES1B-E3/61T, CGRA4002-G, ES1B-13-F) support -55°C to 150°C, representing a reduced range. MURA110T3G and ESH1B-E3/5AT support -65°C to 175°C, matching EGF1B's full range. Selection depends on application temperature requirements. Applications operating below -55°C or above 150°C require substitutes with extended temperature ranges.

Q: Are all substitutes RoHS3 compliant?

A: All listed substitutes maintain ROHS3 compliance, matching EGF1B specifications. All parts are also MSL 1 (Unlimited) moisture sensitivity rated and carry EAR99 ECCN classification. Compliance certifications are consistent across all alternatives.

Q: Which substitute offers the best overall performance improvement?

A: ESH1B-E3/5AT provides the lowest reverse leakage current (1 µA @ 100 V) and fastest reverse recovery time (25 ns), with forward voltage of 900 mV. MURA110T3G provides similar performance with 875 mV forward voltage and 30 ns reverse recovery time, with the advantage of extended temperature range (-65°C to 175°C) and Active product status. Selection between these depends on specific application requirements for leakage, switching speed, and temperature range.

Request Quote (Ships tomorrow)