EGF1A Equivalent & Substitute Parts Reference

Part Overview

The EGF1A is a general-purpose rectifier diode manufactured by onsemi, rated for 50 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This device features fast recovery characteristics with a reverse recovery time of 50 ns and is compliant with RoHS3 and REACH standards. The EGF1A is classified as "Not For New Designs," indicating it is a legacy component. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization within the same electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 1 A
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	10	µA @ 50 V
Package / Case	DO-214AC, SMA	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-65 to 175	°C
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the EGF1A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 50 V
Current - Average Rectified (Io): Must equal or exceed 1 A
Package / Case: Must be DO-214AC (SMA) or equivalent surface mount package
Mounting Type: Must be Surface Mount
Technology: Standard rectifier diode technology (excludes Schottky variants for direct equivalence)

Secondary Compatibility Parameters:

Voltage - Forward (Vf) (Max) @ If: Acceptable range 0.875 V to 1.3 V @ 1 A
Reverse Recovery Time (trr): Fast Recovery ≤ 500 ns preferred for performance consistency
Current - Reverse Leakage @ Vr: Lower values indicate superior performance
Operating Temperature - Junction: Must support -55°C minimum and 150°C minimum upper limit
RoHS3 Compliance: Required for regulatory alignment

Parts meeting all primary criteria and most secondary criteria are classified as direct equivalents. Parts exceeding current rating (2 A) or voltage rating (60 V) are classified as upgrades suitable for higher-stress applications.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	trr [ns]	Ir @ Vr [µA]	Package	Product Status
EGF1A	onsemi	50	1	1.0	50	10 @ 50V	DO-214AC (SMA)	Not For New Designs
ES1A	YAGEO	50	1	0.95	—	—	DO-214AC	Active
RS1A	Taiwan Semiconductor Corporation	50	1	1.3	150	5 @ 50V	DO-214AC (SMA)	Active
S1A	YAGEO	50	1	1.1	—	—	DO-214AC	Active
CGRA4001-G	Comchip Technology	50	1	1.1	—	5 @ 50V	DO-214AC (SMA)	Active
ES1A-13-F	Diodes Incorporated	50	1	0.92	25	5 @ 50V	DO-214AC (SMA)	Active
RS1A-M3/61T	Vishay General Semiconductor - Diodes Division	50	1	1.3	150	5 @ 50V	DO-214AC (SMA)	Active
MURA105T3G	onsemi	50	2	0.875	30	2 @ 50V	DO-214AC (SMA)	Active
CMSH1-60M TR13 PBFREE	Central Semiconductor Corp	60	1	0.7	—	500 @ 60V	DO-214AC (SMA)	Active
GF1A-E3/67A	Vishay General Semiconductor - Diodes Division	50	1	1.1	2000	5 @ 50V	DO-214BA	Active

Engineering Selection Recommendations

Direct Equivalents (Recommended Primary Substitutes):

ES1A-13-F (Diodes Incorporated) and RS1A-M3/61T (Vishay) are the preferred direct equivalents. Both maintain 50 V / 1 A specifications, feature DO-214AC (SMA) packaging, and hold Active product status. ES1A-13-F offers superior forward voltage characteristics (0.92 V) and faster recovery time (25 ns), making it optimal for efficiency-critical applications. RS1A-M3/61T provides proven Vishay reliability with established supply chain presence.

Secondary Equivalents (Acceptable Substitutes):

ES1A (YAGEO), S1A (YAGEO), CGRA4001-G (Comchip Technology), and RS1A (Taiwan Semiconductor Corporation) meet all primary electrical and mechanical criteria with Active product status. These parts are suitable for general-purpose rectification where the EGF1A specifications are required. Reverse leakage current and forward voltage variations remain within acceptable operational ranges for standard applications.

Performance Upgrade Option:

MURA105T3G (onsemi) provides a 2 A current rating upgrade while maintaining 50 V voltage specification and DO-214AC (SMA) packaging. This part is suitable for applications requiring higher current capacity or thermal margin. Faster recovery time (30 ns) and lower reverse leakage (2 µA) enhance performance characteristics.

Voltage Upgrade Option:

CMSH1-60M TR13 PBFREE (Central Semiconductor Corp) offers 60 V rating with 1 A current in DO-214AC (SMA) packaging. This Schottky technology variant provides lower forward voltage (0.7 V) for reduced power dissipation but exhibits higher reverse leakage (500 µA @ 60 V). Suitable for applications requiring higher voltage margin or lower forward drop.

Package Variant:

GF1A-E3/67A (Vishay) maintains 50 V / 1 A specifications but uses DO-214BA (GF1) packaging instead of DO-214AC (SMA). This part is suitable only if PCB layout accommodates the alternative package footprint. Slower recovery time (2 µs) indicates standard recovery technology.

Compliance Verification:

All recommended substitutes maintain RoHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original EGF1A specification.

Frequently Asked Questions (FAQ)

Q: Can ES1A-13-F directly replace EGF1A in existing designs?

A: Yes. ES1A-13-F meets all primary electrical specifications (50 V, 1 A, DO-214AC SMA package) and holds Active product status. Forward voltage (0.92 V) and reverse recovery time (25 ns) are within acceptable operational ranges. No circuit redesign is required.

Q: What is the difference between EGF1A and MURA105T3G?

A: MURA105T3G is a performance upgrade rated for 2 A average rectified current versus EGF1A's 1 A rating. Both maintain 50 V reverse voltage and DO-214AC (SMA) packaging. MURA105T3G provides higher current capacity and lower reverse leakage (2 µA vs. 10 µA), making it suitable for higher-stress applications or designs requiring thermal margin.

Q: Why is GF1A-E3/67A listed as a substitute if the package is different?

A: GF1A-E3/67A is included for reference as a functional equivalent meeting 50 V / 1 A electrical specifications. However, the DO-214BA (GF1) package differs from EGF1A's DO-214AC (SMA) package. Direct substitution requires PCB footprint compatibility verification. This part is suitable only for new designs or redesigns accommodating the alternative package.

Q: Can CMSH1-60M TR13 PBFREE replace EGF1A?

A: CMSH1-60M TR13 PBFREE is a Schottky technology variant with 60 V / 1 A rating in DO-214AC (SMA) packaging. While it exceeds voltage specification and maintains current rating, the Schottky technology introduces higher reverse leakage (500 µA @ 60 V) compared to EGF1A (10 µA @ 50 V). Substitution is acceptable for applications where lower forward voltage (0.7 V) justifies higher leakage current, but not recommended as a direct drop-in replacement for standard rectification.

Q: What does "Not For New Designs" mean for EGF1A?

A: This status indicates onsemi has discontinued the EGF1A for new product development. Existing inventory remains available, but new designs should select from Active-status alternatives such as ES1A-13-F, RS1A-M3/61T, or MURA105T3G to ensure long-term supply continuity and manufacturer support.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of the original EGF1A specification.

Q: Which substitute offers the best performance for low-power applications?

A: ES1A-13-F provides optimal performance for low-power applications, featuring the lowest forward voltage (0.92 V) and fastest recovery time (25 ns) among direct equivalents. These characteristics minimize power dissipation and switching losses in rectification circuits.

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