ECH8619-TL-E Equivalent & Substitute Parts

Part Overview

The ECH8619-TL-E is a MOSFET N/P-Channel array manufactured by onsemi, rated for 60V drain-to-source voltage with continuous drain currents of 3A (N-channel) and 2A (P-channel). This device is configured as a logic-level gate MOSFET in an 8-SMD surface mount package with a maximum power dissipation of 1.5W at 150°C junction temperature.

The ECH8619-TL-E is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

ECH8619-TL-E

onsemiIn Stock: 1363ECH8619-TL-E Datasheet

Current PartRFQ

QS8M31TR

Rohm SemiconductorIn Stock: 4608QS8M31TR Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the ECH8619-TL-E is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 60V
• Continuous Drain Current (Id): Must support 3A (N-channel) and 2A (P-channel) at 25°C
• Configuration: Must be N and P-Channel dual MOSFET array
• Technology: Must be MOSFET (Metal Oxide)
• On-State Resistance (Rds On): Must not exceed specified maximum values under rated conditions
• Gate Charge (Qg): Lower values indicate faster switching performance
• Input Capacitance (Ciss): Lower values reduce gate drive requirements

Mechanical Compatibility Criteria:

• Mounting Type: Must be Surface Mount
• Package / Case: Must be 8-SMD, Flat Lead configuration
• Pin count and lead spacing must accommodate existing PCB layouts

The QS8M31TR manufactured by Rohm Semiconductor meets all substitution criteria. This part maintains identical voltage and current ratings, equivalent package configuration, and compatible thermal characteristics, enabling direct functional replacement in the ECH8619-TL-E application space.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The ECH8619-TL-E is classified as obsolete, while the QS8M31TR is classified as active. Selection of the QS8M31TR ensures access to current manufacturing inventory and ongoing supplier support.

Compliance and Certification: Both parts maintain REACH Unaffected status and EAR99 ECCN classification. The QS8M31TR carries RoHS3 compliance certification, providing additional environmental regulatory alignment for new designs and production runs.

Electrical Performance: The QS8M31TR demonstrates lower gate charge characteristics (4nC and 7.2nC at 5V versus 12.8nC at 10V), resulting in reduced gate drive power requirements and faster switching transitions. The QS8M31TR exhibits slightly higher on-state resistance at rated current conditions; however, this difference remains within acceptable design margins for most applications operating within the 60V, 3A/2A specification envelope.

Thermal Management: Both devices operate at identical maximum junction temperatures (150°C). The QS8M31TR specifies a lower maximum power dissipation (1.1W versus 1.5W); thermal design verification is required for applications approaching maximum power limits.

Packaging and Supply: The QS8M31TR is available in Cut Tape and Digi-Reel packaging formats with significantly higher inventory availability (4569 pieces in stock versus 1283 pieces for the obsolete ECH8619-TL-E), supporting both prototype and production-volume requirements.

Frequently Asked Questions (FAQ)

Q: Can the QS8M31TR directly replace the ECH8619-TL-E in existing designs?

A: Yes. Both devices share identical voltage ratings (60V Vdss), current ratings (3A N-channel, 2A P-channel), package configuration (8-SMD, Flat Lead), and operating temperature range (150°C TJ). Pin-to-pin compatibility and functional equivalence are established.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Gate charge is lower in the QS8M31TR (4nC/7.2nC at 5V versus 12.8nC at 10V), enabling faster switching; (2) On-state resistance is slightly higher in the QS8M31TR (112mOhm at 3A and 210mOhm at 2A versus 93mOhm at 1.5A); (3) Maximum power dissipation is lower in the QS8M31TR (1.1W versus 1.5W); (4) The QS8M31TR is RoHS3 compliant and currently in active production.

Q: Are there thermal design implications when switching from ECH8619-TL-E to QS8M31TR?

A: The QS8M31TR specifies a lower maximum power dissipation rating (1.1W versus 1.5W). Applications operating near the 1.5W limit of the original part require thermal analysis to confirm the QS8M31TR remains within acceptable operating conditions. The slightly higher on-state resistance may increase power dissipation under high-current conditions.

Q: What is the impact of lower gate charge in the QS8M31TR?

A: Lower gate charge (4nC/7.2nC at 5V) reduces the charge required to switch the device, resulting in lower gate drive power consumption and faster switching transitions. This typically improves overall circuit efficiency and reduces electromagnetic interference in switching applications.

Q: Are both parts available in the same packaging formats?

A: The ECH8619-TL-E is specified with standard surface mount packaging. The QS8M31TR is available in Cut Tape (CT) and Digi-Reel formats, providing flexibility for both prototype and high-volume production environments.

Q: What compliance certifications apply to the QS8M31TR?

A: The QS8M31TR carries RoHS3 compliance certification and maintains REACH Unaffected status. Both parts share EAR99 ECCN classification and identical HTSUS codes (8541.29.0095).

Q: Is the QS8M31TR suitable for new design implementations?

A: Yes. The QS8M31TR is classified as active product with current manufacturing support and significantly higher inventory availability. It is suitable for both replacement applications and new design implementations requiring 60V, 3A/2A N/P-channel MOSFET arrays in 8-SMD surface mount packages.