ECH8309-TL-H Equivalent & Substitute Parts

Part Overview

The ECH8309-TL-H is a P-Channel MOSFET manufactured by onsemi, rated for 12V drain-to-source voltage with 9.5A continuous drain current at 25°C. This device is packaged in an 8-SMD, Flat Lead surface mount configuration and is designed for applications requiring P-channel switching and amplification in low-voltage circuits.

The ECH8309-TL-H carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	12	V
Current - Continuous Drain (Id) @ 25°C	9.5	A
Rds On (Max) @ Id, Vgs	16 mOhm @ 4.5A, 4.5V	—
Gate Charge (Qg) (Max) @ Vgs	18	nC @ 4.5V
Power Dissipation (Max)	1.5	W
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	8-SMD, Flat Lead	—
Vgs (Max)	±10	V
Input Capacitance (Ciss) (Max) @ Vds	1780	pF @ 6V

Substitute Part Grouping Explanation

Substitution of the ECH8309-TL-H is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

FET Type: P-Channel
Drain to Source Voltage (Vdss): 12V
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Gate-Source Voltage (Vgs Max): ±10V

Performance Compatibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 9.5A
On-State Resistance (Rds On): Equal to or lower than specified maximum
Gate Charge (Qg): Acceptable within circuit switching requirements
Power Dissipation: Sufficient for application thermal requirements
Operating Temperature: Minimum 150°C junction temperature

The ECH8308-TL-H qualifies as a direct substitute based on identical voltage ratings, package configuration, and enhanced electrical performance characteristics that maintain or exceed the original specification envelope.

Parameter Comparison

Parameter	ECH8309-TL-H (Main Part)	ECH8308-TL-H (Substitute)	Unit
FET Type	P-Channel	P-Channel	—
Drain to Source Voltage (Vdss)	12	12	V
Current - Continuous Drain (Id) @ 25°C	9.5	10	A
Rds On (Max) @ Id, Vgs	16 mOhm @ 4.5A, 4.5V	12.5 mOhm @ 5A, 4.5V	—
Gate Charge (Qg) (Max) @ Vgs	18	26	nC @ 4.5V
Power Dissipation (Max)	1.5	1.6	W
Operating Temperature (TJ)	150	150	°C
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	8-SMD, Flat Lead	8-SMD, Flat Lead	—
Vgs (Max)	±10	±10	V
Input Capacitance (Ciss) (Max) @ Vds	1780	2300	pF @ 6V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

ECH8308-TL-H as Primary Substitute:

The ECH8308-TL-H is the direct substitute for the obsolete ECH8309-TL-H. Both devices share identical voltage ratings (12V Vdss), gate-source voltage limits (±10V), and package configuration (8-SMD, Flat Lead surface mount). Both maintain RoHS3 compliance, MSL Level 1 rating, and REACH unaffected status.

The ECH8308-TL-H provides enhanced electrical performance with 10A continuous drain current compared to 9.5A, and lower on-state resistance (12.5 mOhm at 5A, 4.5V versus 16 mOhm at 4.5A, 4.5V). These improvements ensure superior thermal performance and reduced power dissipation in equivalent circuit applications.

The ECH8308-TL-H carries Active product status, ensuring long-term availability and supply chain continuity. This part is suitable for direct replacement in all applications where the ECH8309-TL-H was originally specified, with the added benefit of improved current handling capability and reduced on-state losses.

Frequently Asked Questions (FAQ)

Q: Can the ECH8308-TL-H directly replace the ECH8309-TL-H in existing designs?

A: Yes. Both devices are P-Channel MOSFETs with identical 12V drain-to-source voltage ratings, ±10V gate-source voltage limits, and 8-SMD, Flat Lead package configuration. The ECH8308-TL-H provides equal or superior electrical performance across all critical parameters.

Q: What are the key differences between these two parts?

A: The ECH8308-TL-H offers higher continuous drain current (10A versus 9.5A), lower on-state resistance (12.5 mOhm versus 16 mOhm), and slightly higher power dissipation capability (1.6W versus 1.5W). Gate charge is higher at 26 nC compared to 18 nC, and input capacitance is increased to 2300 pF from 1780 pF.

Q: Are there any circuit design considerations when substituting the ECH8308-TL-H?

A: The increased gate charge and input capacitance of the ECH8308-TL-H may require evaluation of gate drive circuit performance, particularly in high-frequency switching applications. The lower on-state resistance provides improved thermal performance and reduced power dissipation, which is beneficial in most applications.

Q: Do both parts meet the same compliance and regulatory requirements?

A: Yes. Both the ECH8309-TL-H and ECH8308-TL-H are RoHS3 compliant, carry MSL Level 1 (Unlimited) moisture sensitivity rating, and are REACH unaffected. Both share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: What is the product status difference between these parts?

A: The ECH8309-TL-H is Obsolete, while the ECH8308-TL-H is Active. The Active status of the ECH8308-TL-H ensures continued manufacturing and supply availability for new designs and ongoing production support.

Q: Are the packages physically identical?

A: Yes. Both parts use the 8-SMD, Flat Lead surface mount package with identical footprint and pinout configuration, enabling direct PCB layout compatibility without modification.

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