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DXTP5820CFDB-7 Equivalent & Substitute Parts
Part Overview
The DXTP5820CFDB-7 is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for surface mount applications in the 3-UDFN package format. This component operates at a maximum collector current of 6 A with a collector-emitter breakdown voltage of 20 V and a maximum power dissipation of 690 mW. The device is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1). Equivalent and substitute parts are identified based on matching or exceeding electrical performance parameters while maintaining compatible package and mounting specifications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) Max | 6 | A |
| Voltage - Collector Emitter Breakdown (Max) | 20 | V |
| Vce Saturation (Max) | 350 mV @ 300 mA, 6 A | — |
| Current - Collector Cutoff (Max) | 100 | nA |
| DC Current Gain (hFE) Min | 200 @ 1 A, 2 V | — |
| Power - Max | 690 | mW |
| Frequency - Transition | 140 | MHz |
| Operating Temperature Range | -55 to 150 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | 3-UDFN Exposed Pad | — |
| RoHS Status | ROHS3 Compliant | — |
| MSL Rating | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the DXTP5820CFDB-7 is determined by the following electrical and mechanical criteria:
Primary Substitution Criteria:
- Transistor type must be PNP
- Collector current (Ic) must equal or exceed 6 A
- Collector-emitter breakdown voltage must equal or exceed 20 V
- DC current gain (hFE) must meet or exceed 200 at specified operating conditions
- Mounting type must be Surface Mount
- Package must be compatible with 3-UDFN Exposed Pad footprint
- Product status must be Active
- RoHS3 compliance required
Secondary Compatibility Factors:
- Power dissipation capability
- Transition frequency
- Operating temperature range
- Saturation voltage characteristics
The 2SAR562F3TR from Rohm Semiconductor qualifies as a substitute based on matching collector current (6 A), exceeding collector-emitter breakdown voltage (30 V versus 20 V), meeting DC current gain requirements (200 minimum), and maintaining Active product status with RoHS3 compliance. The substitute operates in the same surface mount category with compatible 3-UDFN package specifications.
Parameter Comparison
| Parameter | DXTP5820CFDB-7 (Diodes Inc.) | 2SAR562F3TR (Rohm Semiconductor) | Match Status |
|---|---|---|---|
| Transistor Type | PNP | PNP | Match |
| Current - Collector (Ic) Max | 6 A | 6 A | Match |
| Voltage - Collector Emitter Breakdown (Max) | 20 V | 30 V | Substitute Exceeds |
| Vce Saturation (Max) | 350 mV @ 300 mA, 6 A | 300 mV @ 150 mA, 3 A | Substitute Lower |
| Current - Collector Cutoff (Max) | 100 nA | 100 nA (ICBO) | Match |
| DC Current Gain (hFE) Min | 200 @ 1 A, 2 V | 200 @ 500 mA, 2 V | Match |
| Power - Max | 690 mW | 1 W | Substitute Exceeds |
| Frequency - Transition | 140 MHz | 180 MHz | Substitute Exceeds |
| Operating Temperature (Max) | 150°C | 150°C | Match |
| Mounting Type | Surface Mount | Surface Mount | Match |
| Package / Case | 3-UDFN Exposed Pad | 3-UDFN Exposed Pad | Match |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Match |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | Match |
| Product Status | Active | Active | Match |
Engineering Selection Recommendations
DXTP5820CFDB-7 (Primary Component)
Use the DXTP5820CFDB-7 when the application requires the specified electrical characteristics with 20 V collector-emitter breakdown voltage and 690 mW power dissipation. This component is Active status with full RoHS3 compliance and unlimited moisture sensitivity rating, suitable for standard production environments.
2SAR562F3TR (Substitute Component)
The 2SAR562F3TR from Rohm Semiconductor is a qualified substitute when the DXTP5820CFDB-7 is unavailable. This substitute provides enhanced electrical performance with 30 V collector-emitter breakdown voltage, 1 W power dissipation capability, and 180 MHz transition frequency. The substitute maintains identical collector current (6 A), matching DC current gain (200 minimum), and compatible surface mount 3-UDFN package specifications. Both components are Active status with RoHS3 compliance and MSL 1 rating. The substitute is suitable for applications where higher voltage margin and power handling capability provide design flexibility without circuit modification.
Frequently Asked Questions (FAQ)
Q: Can the 2SAR562F3TR directly replace the DXTP5820CFDB-7 in my circuit?
A: Yes. Both components are PNP transistors with matching collector current (6 A), DC current gain (200 minimum), and surface mount 3-UDFN package specifications. The substitute provides higher collector-emitter breakdown voltage (30 V versus 20 V) and greater power dissipation (1 W versus 690 mW), making it electrically compatible for direct substitution without circuit redesign.
Q: What are the key electrical differences between these parts?
A: The primary differences are collector-emitter breakdown voltage (DXTP5820CFDB-7: 20 V; 2SAR562F3TR: 30 V), maximum power dissipation (DXTP5820CFDB-7: 690 mW; 2SAR562F3TR: 1 W), and transition frequency (DXTP5820CFDB-7: 140 MHz; 2SAR562F3TR: 180 MHz). The substitute exceeds the original part specifications in these parameters while maintaining matching collector current and DC current gain.
Q: Are the packages physically compatible?
A: Yes. Both components use the 3-UDFN Exposed Pad surface mount package with identical footprint specifications. No PCB layout modifications are required for substitution.
Q: Do both parts meet the same compliance standards?
A: Yes. Both the DXTP5820CFDB-7 and 2SAR562F3TR are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating. Both components are Active product status.
Q: What is the operating temperature range for each part?
A: The DXTP5820CFDB-7 operates from -55°C to 150°C junction temperature. The 2SAR562F3TR operates to a maximum junction temperature of 150°C. Both parts support the same upper temperature limit.
Q: Can I use the 2SAR562F3TR in a 20 V application?
A: Yes. The 2SAR562F3TR has a 30 V collector-emitter breakdown voltage rating, which exceeds the 20 V requirement. The higher voltage rating provides additional design margin without affecting circuit operation at 20 V.
Q: What packaging formats are available for these parts?
A: The DXTP5820CFDB-7 is supplied in Tape & Reel (TR) format. The 2SAR562F3TR is supplied in Cut Tape (CT) and Digi-Reel® format. Both are surface mount components suitable for automated assembly.
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