DTA144GKAT146 Equivalent & Substitute Parts

Part Overview

The DTA144GKAT146 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Rohm Semiconductor in SMT3 surface mount packaging. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. The part operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 200 mW power dissipation. Finding equivalent substitute parts is necessary due to the obsolete status and potential supply constraints of the original component.

Substiute Parts

DTA144GKAT146
Rohm SemiconductorIn Stock: 1565DTA144GKAT146 Datasheet
DTA144GKAT146
Current Part
DDTA144TCA-7
Diodes IncorporatedIn Stock: 7071DDTA144TCA-7 Datasheet
DDTA144TCA-7
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DDTA144GCA-7-F
Diodes IncorporatedIn Stock: 27136DDTA144GCA-7-F Datasheet
DDTA144GCA-7-F
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DDTA144TCA-7-F
Diodes IncorporatedIn Stock: 17389DDTA144TCA-7-F Datasheet
DDTA144TCA-7-F
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MMUN2140LT1G
onsemiIn Stock: 1087MMUN2140LT1G Datasheet
MMUN2140LT1G
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MUN2140T1G
onsemiIn Stock: 987MUN2140T1G Datasheet
MUN2140T1G
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PDTA144TT,215
Nexperia USA Inc.In Stock: 1231PDTA144TT,215 Datasheet
PDTA144TT,215
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RN2413TE85LF
Toshiba Semiconductor and StorageIn Stock: 3773RN2413TE85LF Datasheet
RN2413TE85LF
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BCR169E6327HTSA1
Infineon TechnologiesIn Stock: 973BCR169E6327HTSA1 Datasheet
BCR169E6327HTSA1
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DDTA114GCA-7-F
Diodes IncorporatedIn Stock: 3435DDTA114GCA-7-F Datasheet
DDTA114GCA-7-F
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DDTA114TCA-7-F
Diodes IncorporatedIn Stock: 6138DDTA114TCA-7-F Datasheet
DDTA114TCA-7-F
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DDTA115TCA-7-F
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DDTA115TCA-7-F
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DDTA123TCA-7-F
Diodes IncorporatedIn Stock: 9797DDTA123TCA-7-F Datasheet
DDTA123TCA-7-F
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DDTA124GCA-7-F
Diodes IncorporatedIn Stock: 53049DDTA124GCA-7-F Datasheet
DDTA124GCA-7-F
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DDTA124TCA-7-F
Diodes IncorporatedIn Stock: 77323DDTA124TCA-7-F Datasheet
DDTA124TCA-7-F
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DDTA143TCA-7-F
Diodes IncorporatedIn Stock: 2095DDTA143TCA-7-F Datasheet
DDTA143TCA-7-F
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DDTA144ECA-7-F
Diodes IncorporatedIn Stock: 6152DDTA144ECA-7-F Datasheet
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DTA114TCA-TP
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MMUN2112LT1G
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MMUN2113LT1G
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MMUN2113LT1G
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MMUN2113LT3G
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MMUN2115LT1G
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MMUN2116LT1G
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MUN2111T1G
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MUN2112T1G
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MUN2113T1G
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MUN2114T1G
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PDTA114TT,215
Nexperia USA Inc.In Stock: 769PDTA114TT,215 Datasheet
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PDTA115TT,215
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PDTA123TT,215
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PDTA123TT,235
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PDTA124TT,215
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PDTA143TT,215
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PDTB123TT,215
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RN2412TE85LF
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SMMUN2116LT1G
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Key Parameters

Parameter Value Unit
Transistor Type PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 100 mA
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500 nA
Frequency - Transition 250 MHz
Power - Max 200 mW
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DTA144GKAT146 is determined by the following critical parameters:

Primary Matching Criteria:

  • Transistor type: PNP - Pre-Biased configuration
  • Voltage rating: 50 V collector-emitter breakdown minimum
  • Current rating: 100 mA collector current minimum
  • Power dissipation: 200 mW minimum
  • Base resistor network: 47 kOhms emitter-base (R2) or base (R1) configuration
  • Surface mount package compatibility: SOT-23-3, SC-59, or TO-236-3

Substitution Categories:

Direct Substitutes (Identical Electrical Parameters): Parts meeting all primary criteria with matching DC current gain, saturation voltage, and transition frequency specifications enable direct replacement without circuit redesign.

Compatible Substitutes (Equivalent Functional Performance): Parts with equivalent or superior electrical ratings but different internal resistor configurations (R1 vs. R2) or slightly different gain characteristics remain functionally compatible in most applications due to the pre-biased design topology.

Similar Substitutes (Acceptable Performance Trade-offs): Parts with minor variations in transition frequency, saturation voltage, or cutoff current remain suitable where application bandwidth and switching speed requirements are not critical.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V hFE (Min) Vce Sat (Max) mV Power (Max) mW Resistor Config Package Status
DTA144GKAT146 Rohm Semiconductor 100 50 68 @ 5mA, 5V 300 @ 500µA, 10mA 200 R2: 47k SMT3 Not For New Designs
DDTA144GCA-7-F Diodes Incorporated 100 50 68 @ 5mA, 5V 300 @ 500µA, 10mA 200 R2: 47k SOT-23-3 Active
DDTA144TCA-7-F Diodes Incorporated 100 50 100 @ 1mA, 5V 300 @ 250µA, 2.5mA 200 R1: 47k SOT-23-3 Active
DDTA144TCA-7 Diodes Incorporated 100 50 200 SOT-23-3 Active
MMUN2140LT1G onsemi 100 50 120 @ 5mA, 10V 250 @ 1mA, 10mA 246 R1: 47k SOT-23-3 Active
MUN2140T1G onsemi 100 50 120 @ 5mA, 10V 250 @ 1mA, 10mA 230 R1: 47k SC-59 Active
PDTA144TT,215 Nexperia USA Inc. 100 50 100 @ 1mA, 5V 150 @ 500µA, 10mA 250 R1: 47k TO-236AB Active
RN2413TE85LF Toshiba Semiconductor and Storage 100 50 120 @ 1mA, 5V 300 @ 250µA, 5mA 200 R1: 47k S-Mini Active
BCR169E6327HTSA1 Infineon Technologies 100 50 120 @ 5mA, 5V 300 @ 500µA, 10mA 200 R1: 4.7k PG-SOT23 Obsolete
DDTA114GCA-7-F Diodes Incorporated 100 50 30 @ 5mA, 5V 300 @ 500µA, 10mA 200 R2: 10k SOT-23-3 Active
DDTA114TCA-7-F Diodes Incorporated 100 50 100 @ 1mA, 5V 300 @ 100µA, 1mA 200 R1: 10k SOT-23-3 Active

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Recommended):

DDTA144GCA-7-F (Diodes Incorporated) provides identical electrical specifications to the DTA144GKAT146, including matching DC current gain (68 @ 5mA, 5V), saturation voltage (300mV @ 500µA, 10mA), and 47 kOhms emitter-base resistor configuration. This part is in Active product status with 27,100 units in stock. Both parts are ROHS3 compliant with MSL 1 rating. The primary difference is packaging format (SOT-23-3 vs. SMT3), which are mechanically compatible within TO-236-3 footprint specifications.

DDTA144TCA-7-F (Diodes Incorporated) offers equivalent voltage and current ratings with Active status and high inventory (17,300 units). This part features a base resistor (R1) configuration instead of emitter-base (R2), resulting in higher DC current gain (100 @ 1mA, 5V). This configuration is functionally compatible in applications where the pre-biased design provides adequate base drive.

Tier 2 - Compatible Substitutes (Acceptable with Verification):

PDTA144TT,215 (Nexperia USA Inc.) meets all primary electrical criteria with 100 mA collector current, 50 V breakdown voltage, and 250 mW power rating. The part features improved saturation voltage (150mV @ 500µA, 10mA) compared to the original specification. Active status with 1,155 units available. ROHS3 compliant.

MMUN2140LT1G and MUN2140T1G (onsemi) both provide 100 mA, 50 V ratings with superior DC current gain (120 @ 5mA, 10V) and lower saturation voltage (250mV @ 1mA, 10mA). Both are Active status parts with adequate inventory. These represent functional improvements over the original device.

RN2413TE85LF (Toshiba Semiconductor and Storage) maintains 100 mA, 50 V, 200 mW specifications with 120 @ 1mA, 5V gain. Transition frequency is 200 MHz (vs. 250 MHz original). Active status with 3,677 units in stock.

Tier 3 - Alternative Configurations (Application-Dependent):

DDTA114GCA-7-F and DDTA114TCA-7-F (Diodes Incorporated) feature 10 kOhms base resistor networks instead of 47 kOhms. These parts are suitable only in applications where the lower base resistance provides acceptable biasing characteristics. Both are Active status with adequate inventory.

Parts to Avoid:

BCR169E6327HTSA1 (Infineon Technologies) is classified as Obsolete and should not be selected for new applications despite meeting electrical specifications.

Frequently Asked Questions (FAQ)

Q: Can DDTA144GCA-7-F directly replace DTA144GKAT146 without circuit modification?

A: Yes. DDTA144GCA-7-F provides identical electrical specifications including DC current gain (68 @ 5mA, 5V), saturation voltage (300mV @ 500µA, 10mA), and 47 kOhms emitter-base resistor configuration. Both parts are ROHS3 compliant with MSL 1 rating. The packaging format difference (SOT-23-3 vs. SMT3) is mechanically compatible within TO-236-3 footprint specifications.

Q: What is the difference between R1 and R2 resistor configurations in pre-biased transistors?

A: Pre-biased PNP transistors incorporate internal resistor networks for biasing. R2 (emitter-base) configuration places the resistor between emitter and base terminals, affecting base current distribution. R1 (base) configuration places the resistor at the base terminal. Both configurations provide pre-biasing functionality, but R1 typically results in higher DC current gain due to different base drive characteristics. Selection depends on application biasing requirements.

Q: Are onsemi MUN2140T1G and MMUN2140LT1G suitable substitutes?

A: Both onsemi parts meet the primary electrical criteria (100 mA, 50 V, 200+ mW) and are Active status. They feature higher DC current gain (120 @ 5mA, 10V) and lower saturation voltage (250mV @ 1mA, 10mA) compared to the original DTA144GKAT146. These represent functional improvements. Compatibility depends on whether the application circuit can tolerate the higher gain characteristics.

Q: Why should BCR169E6327HTSA1 be avoided?

A: BCR169E6327HTSA1 is classified as Obsolete product status. Additionally, it features a 4.7 kOhms base resistor instead of 47 kOhms, which significantly alters biasing behavior. Selection of Active status parts with matching resistor configurations is recommended.

Q: What packaging formats are compatible with the original SMT3 package?

A: The DTA144GKAT146 uses SMT3 packaging, which is mechanically equivalent to SOT-23-3, SC-59, and TO-236-3 designations. All substitute parts listed use these compatible package formats. Verify PCB footprint compatibility before assembly.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this document are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original DTA144GKAT146 compliance status.

Q: What is the significance of transition frequency differences?

A: The original DTA144GKAT146 specifies 250 MHz transition frequency. Substitute parts range from 200 MHz (RN2413TE85LF) to 250 MHz (DDTA144GCA-7-F, DDTA144TCA-7-F). For applications requiring high-frequency switching or RF performance, parts with 250 MHz specification are preferred. For general-purpose switching applications, 200 MHz is typically adequate.

Q: Can PDTA144TT,215 be used in high-reliability applications?

A: PDTA144TT,215 is Active status and ROHS3 compliant. It meets all primary electrical specifications with improved saturation voltage performance (150mV vs. 300mV). Suitability for high-reliability applications depends on specific qualification requirements and design validation procedures.

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