Equivalent & Substitute Parts for DTA143TUAT106 – Rohm Semiconductor

Part Overview

DTA143TUAT106 is a pre-biased PNP bipolar junction transistor (BJT) from Rohm Semiconductor, designed for surface-mount applications in the UMT3 (SC-70, SOT-323) package. It features a 50 V collector-emitter breakdown voltage, supports up to 100 mA collector current, and is suited for compact circuit layouts requiring built-in bias resistors. The part is active and available, but finding alternative models is occasionally required to address supply chain continuity, multi-vendor sourcing strategies, and inventory optimization for electronic design and production.

Substiute Parts

DTA143TUAT106
Rohm SemiconductorIn Stock: 4240DTA143TUAT106 Datasheet
DTA143TUAT106
Current Part
DTA143TU3T106
Rohm SemiconductorIn Stock: 2317DTA143TU3T106 Datasheet
DTA143TU3T106
Similar
MUN5116T1G
onsemiIn Stock: 1014MUN5116T1G Datasheet
MUN5116T1G
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DDTA113TUA-7-F
Diodes IncorporatedIn Stock: 24434DDTA113TUA-7-F Datasheet
DDTA113TUA-7-F
Upgrade
DDTA114TUA-7-F
Diodes IncorporatedIn Stock: 38130DDTA114TUA-7-F Datasheet
DDTA114TUA-7-F
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DDTA115TUA-7-F
Diodes IncorporatedIn Stock: 9414DDTA115TUA-7-F Datasheet
DDTA115TUA-7-F
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DDTA124TUA-7-F
Diodes IncorporatedIn Stock: 12329DDTA124TUA-7-F Datasheet
DDTA124TUA-7-F
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PDTA143TU,115
Nexperia USA Inc.In Stock: 3264PDTA143TU,115 Datasheet
PDTA143TU,115
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RN2310,LF
Toshiba Semiconductor and StorageIn Stock: 4075RN2310,LF Datasheet
RN2310,LF
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DDTA114GUA-7-F
Diodes IncorporatedIn Stock: 49184DDTA114GUA-7-F Datasheet
DDTA114GUA-7-F
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DDTA115GUA-7-F
Diodes IncorporatedIn Stock: 23258DDTA115GUA-7-F Datasheet
DDTA115GUA-7-F
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DDTA124GUA-7-F
Diodes IncorporatedIn Stock: 53134DDTA124GUA-7-F Datasheet
DDTA124GUA-7-F
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DDTA125TUA-7-F
Diodes IncorporatedIn Stock: 4199DDTA125TUA-7-F Datasheet
DDTA125TUA-7-F
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DDTA144GUA-7-F
Diodes IncorporatedIn Stock: 786DDTA144GUA-7-F Datasheet
DDTA144GUA-7-F
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DTA114TUA-TP
Micro Commercial CoIn Stock: 3643DTA114TUA-TP Datasheet
DTA114TUA-TP
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RN2311(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 3299RN2311(TE85L,F) Datasheet
RN2311(TE85L,F)
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RN2312(TE85L,F)
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Key Parameters

Parameter Value
Manufacturer Part Number DTA143TUAT106
Transistor Type PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 100 mA
Resistor - Base (R1) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) (ICBO) 500nA
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active

Substitute Part Grouping Explanation

Substitution logic is strictly based on the following parameters: transistor type (PNP, pre-biased), maximum collector-emitter breakdown voltage, maximum collector current, base resistor value, DC current gain (hFE), saturation voltage, collector cutoff current, transition frequency, total power rating, mounting type, package/case, and compliance statuses (RoHS, REACH, MSL). Only parts matching or closely aligning with these parameters are listed, ensuring mechanical and electrical compatibility for direct replacement in circuit assemblies.

Parameter Comparison

Parameter DTA143TUAT106
(Rohm)
DTA143TU3T106
(Rohm)
MUN5116T1G
(onsemi)
DDTA113TUA-7-F
(Diodes Inc.)
DDTA114TUA-7-F
(Diodes Inc.)
DDTA115TUA-7-F
(Diodes Inc.)
DDTA124TUA-7-F
(Diodes Inc.)
PDTA143TU,115
(Nexperia)
RN2310,LF
(Toshiba)
RN2311(TE85L,F)
(Toshiba)
RN2312(TE85L,F)
(Toshiba)
Transistor Type PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased PNP Pre-Biased
VCE(Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
IC(Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
R1 (Base) 4.7 kΩ 4.7 kΩ 4.7 kΩ 1 kΩ 10 kΩ 100 kΩ 22 kΩ 4.7 kΩ 4.7 kΩ 10 kΩ 22 kΩ
hFE (Min) 100 @ 1mA, 5V 100 @ 1mA, 5V 160 @ 5mA, 10V 100 @ 1mA, 5V 100 @ 1mA, 5V 100 @ 1mA, 5V 100 @ 1mA, 5V 200 @ 1mA, 5V 120 @ 1mA, 5V 120 @ 1mA, 5V 120 @ 1mA, 5V
VCE Sat (Max) 300mV @ 250µA, 5mA 300mV @ 250µA, 5mA 250mV @ 1mA, 10mA 300mV @ 1mA, 10mA 300mV @ 100µA, 1mA 300mV @ 100µA, 1mA 300mV @ 500µA, 5mA 150mV @ 250µA, 5mA 300mV @ 250µA, 5mA 300mV @ 250µA, 5mA 300mV @ 250µA, 5mA
ICBO (Max) 500 nA 500 nA 500 nA 500 nA 500 nA 500 nA 500 nA 1 µA 100 nA 100 nA 100 nA
fT (Freq.) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 200 MHz 200 MHz 200 MHz 200 MHz
PTOT (Max) 200 mW 200 mW 202 mW 200 mW 200 mW 200 mW 200 mW 200 mW 100 mW 100 mW 100 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package/Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
RoHS Status ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 RoHS ROHS3
REACH Status Unaffected Unaffected Unaffected Unaffected Unaffected Unaffected Unaffected Unaffected - - -
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active Active Active Active Active Active Active Active Active

Engineering Selection Recommendations

Select substitute models that are active, ROHS3 compliant, REACH unaffected, and rated at MSL 1 (Unlimited) for unrestricted moisture sensitivity. All substitute models listed share the category, mounting type, and package/case required for direct compatibility. Only products with matching or close electrical characteristics within specified tolerances should be selected for compliant assembly and documentation needs.

Frequently Asked Questions (FAQ)

Q1: What electrical characteristics are mandatory when substituting DTA143TUAT106?
A1: The substitute transistor must be PNP type, pre-biased configuration, with a collector-emitter breakdown voltage of at least 50 V, collector current rating of 100 mA, and similar base resistor values. Other key factors include DC current gain (hFE), saturation voltage, cutoff currents, transition frequency, and total power rating.

Q2: Is package compatibility critical for substitution?
A2: Yes. Substitute parts must use the same package and case—SC-70 or SOT-323—with the same surface-mount format to maintain mechanical and assembly compatibility.

Q3: Are compliance certifications relevant to selection?
A3: Yes. Only substitutes with ROHS3 compliance, REACH unaffected status, and MSL 1 (Unlimited) are suitable, ensuring legal and reliable use in manufacturing environments.

Q4: Do substitute transistors need identical base resistor values?
A4: Matching the base resistor (R1) is important for design preservation. Only models with comparable or listed R1 values are included, as variations will affect biasing conditions.

Q5: Can substitutes with lower power ratings be used?
A5: Substitute selection must maintain or closely match the total power rating (typically 200 mW), unless the design permits otherwise as a documented engineering decision.

Q6: Why are obsolete parts included in the comparison?
A6: Obsolete status is indicated for completeness but such parts should not be used for current or future designs requiring active sourcing and compliance.

Q7: Is it necessary to verify moisture sensitivity and environmental status?
A7: Moisture Sensitivity Level (MSL) 1 (Unlimited) and environmental compliance are mandatory criteria for reliable, unrestricted assembly and storage.

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