DTA115TUAT106 Equivalent & Substitute Parts

Part Overview

The DTA115TUAT106 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Rohm Semiconductor in the UMT3 package. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 200 mW power dissipation. The integrated base resistor (R1) is configured at 100 kOhms, providing internal biasing for simplified circuit design.

The DTA115TUAT106 is classified as an active product with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are necessary when the original manufacturer part becomes unavailable, when alternative packaging formats are required, or when design modifications necessitate different internal resistor configurations while maintaining core electrical performance.

Substiute Parts

DTA115TUAT106
Rohm SemiconductorIn Stock: 3314DTA115TUAT106 Datasheet
DTA115TUAT106
Current Part
DDTA115TUA-7
Diodes IncorporatedIn Stock: 7004DDTA115TUA-7 Datasheet
DDTA115TUA-7
Direct
DDTA115GUA-7-F
Diodes IncorporatedIn Stock: 23258DDTA115GUA-7-F Datasheet
DDTA115GUA-7-F
Direct
DDTA115TUA-7-F
Diodes IncorporatedIn Stock: 9414DDTA115TUA-7-F Datasheet
DDTA115TUA-7-F
Direct
DDTA113TUA-7-F
Diodes IncorporatedIn Stock: 24434DDTA113TUA-7-F Datasheet
DDTA113TUA-7-F
Similar
DDTA114GUA-7-F
Diodes IncorporatedIn Stock: 49184DDTA114GUA-7-F Datasheet
DDTA114GUA-7-F
Similar
DDTA114TUA-7-F
Diodes IncorporatedIn Stock: 38130DDTA114TUA-7-F Datasheet
DDTA114TUA-7-F
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DDTA124GUA-7-F
Diodes IncorporatedIn Stock: 53134DDTA124GUA-7-F Datasheet
DDTA124GUA-7-F
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DDTA124TUA-7-F
Diodes IncorporatedIn Stock: 12329DDTA124TUA-7-F Datasheet
DDTA124TUA-7-F
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DDTA125TUA-7-F
Diodes IncorporatedIn Stock: 4199DDTA125TUA-7-F Datasheet
DDTA125TUA-7-F
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DDTA144GUA-7-F
Diodes IncorporatedIn Stock: 786DDTA144GUA-7-F Datasheet
DDTA144GUA-7-F
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DTA114TUA-TP
Micro Commercial CoIn Stock: 3643DTA114TUA-TP Datasheet
DTA114TUA-TP
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MUN5115T1G
onsemiIn Stock: 30481MUN5115T1G Datasheet
MUN5115T1G
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MUN5116T1G
onsemiIn Stock: 1014MUN5116T1G Datasheet
MUN5116T1G
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PDTA143TU,115
Nexperia USA Inc.In Stock: 3264PDTA143TU,115 Datasheet
PDTA143TU,115
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RN2311(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 3299RN2311(TE85L,F) Datasheet
RN2311(TE85L,F)
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RN2312(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 4238RN2312(TE85L,F) Datasheet
RN2312(TE85L,F)
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Key Parameters

Parameter Value Unit
Transistor Type PNP - Pre-Biased
Collector-Emitter Breakdown Voltage (Max) 50 V
Collector Current (Max) 100 mA
Base Resistor (R1) 100 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 100µA, 1mA
Transition Frequency 250 MHz
Power Dissipation (Max) 200 mW
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the DTA115TUAT106 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

  • Transistor type: PNP - Pre-Biased
  • Collector-emitter breakdown voltage: 50 V
  • Maximum collector current: 100 mA
  • Transition frequency: 250 MHz
  • Power dissipation: 200 mW
  • Package format: SC-70 / SOT-323 surface mount
  • Base resistor configuration: 100 kOhms (R1)
  • DC current gain minimum: 100 @ 1mA, 5V
  • Vce saturation: 300mV @ 100µA, 1mA

Direct Substitutes maintain all electrical parameters and internal resistor values identical to the DTA115TUAT106. These parts are sourced from alternative manufacturers (Diodes Incorporated) and are functionally interchangeable without circuit modification.

Similar Parts share the same core electrical specifications (voltage, current, frequency, power) and package format but differ in internal resistor configuration. These parts require circuit evaluation to confirm suitability based on application-specific biasing requirements.

Parameter Comparison

Part Number Manufacturer Vce(Br) Max (V) Ic Max (mA) Base Resistor (kOhms) hFE Min @ 1mA, 5V Vce Sat Max (mV) Freq (MHz) Power (mW) Package Status
DTA115TUAT106 Rohm Semiconductor 50 100 100 (R1) 100 300 250 200 UMT3 Active
DDTA115TUA-7 Diodes Incorporated 200 SOT-323 Active
DDTA115GUA-7-F Diodes Incorporated 50 100 100 (R2) 82 300 250 200 SOT-323 Active
DDTA115TUA-7-F Diodes Incorporated 50 100 100 (R1) 100 300 250 200 SOT-323 Active
DDTA113TUA-7-F Diodes Incorporated 50 100 1 (R1) 100 300 250 200 SOT-323 Active
DDTA114GUA-7-F Diodes Incorporated 50 100 10 (R2) 30 300 250 200 SOT-323 Active
DDTA114TUA-7-F Diodes Incorporated 50 100 10 (R1) 100 300 250 200 SOT-323 Active
DDTA124GUA-7-F Diodes Incorporated 50 100 22 (R2) 56 300 250 200 SOT-323 Active
DDTA124TUA-7-F Diodes Incorporated 50 100 22 (R1) 100 300 250 200 SOT-323 Active
DDTA125TUA-7-F Diodes Incorporated 200 SOT-323 Obsolete
DDTA144GUA-7-F Diodes Incorporated 50 100 47 (R2) 68 300 250 200 SOT-323 Active

Engineering Selection Recommendations

Direct Substitute (Recommended for Pin-Compatible Replacement):

DDTA115TUA-7-F (Diodes Incorporated) is the primary direct substitute for DTA115TUAT106. This part maintains identical electrical specifications including 100 kOhms base resistor (R1), 100 mA collector current, 50 V breakdown voltage, and 100 minimum DC current gain at 1mA, 5V. Both parts are RoHS3 compliant with MSL 1 rating. The package format transitions from UMT3 (Rohm) to SOT-323 (Diodes), which are mechanically equivalent SC-70 footprints suitable for direct PCB substitution. Product status is active with established supply availability.

Alternative Direct Substitute (Higher Inventory):

DDTA115GUA-7-F (Diodes Incorporated) provides electrical compatibility with the exception of the emitter-base resistor configuration (R2 at 100 kOhms versus R1 at 100 kOhms) and slightly reduced DC current gain (82 minimum at 5mA, 5V versus 100 at 1mA, 5V). This part is suitable when the application circuit can tolerate the specified gain variation. Inventory availability is significantly higher (23,200 units).

Similar Parts for Application-Specific Evaluation:

DDTA114TUA-7-F and DDTA124TUA-7-F maintain the R1 resistor configuration with 100 minimum DC current gain but feature different base resistor values (10 kOhms and 22 kOhms respectively). These parts require circuit analysis to confirm biasing compatibility.

DDTA113TUA-7-F, DDTA114GUA-7-F, DDTA124GUA-7-F, and DDTA144GUA-7-F employ R2 (emitter-base) resistor configurations with varying values and reduced DC current gains. These parts are suitable only when application requirements explicitly permit the specified gain and biasing characteristics.

Parts to Avoid:

DDTA125TUA-7-F is classified as obsolete and should not be selected for new designs or long-term supply requirements.

All recommended substitutes maintain RoHS3 compliance, MSL 1 rating, and REACH unaffected status consistent with the original DTA115TUAT106.

Frequently Asked Questions (FAQ)

Q: Can DDTA115TUA-7-F directly replace DTA115TUAT106 without circuit modification?

A: Yes. DDTA115TUA-7-F is a direct electrical equivalent with identical specifications for collector-emitter voltage, collector current, base resistor value (100 kOhms R1), DC current gain, and saturation characteristics. The package format (SOT-323) is mechanically compatible with the original UMT3 footprint. No circuit changes are required.

Q: What is the difference between R1 and R2 resistor configurations?

A: R1 denotes a base resistor connected between base and collector internally. R2 denotes an emitter-base resistor. The DTA115TUAT106 uses R1 configuration. Parts with R2 configuration (such as DDTA115GUA-7-F) have different biasing characteristics and may require circuit evaluation depending on application requirements.

Q: Why does DDTA115GUA-7-F show lower DC current gain (82 vs. 100)?

A: DDTA115GUA-7-F uses R2 (emitter-base) resistor configuration and is tested at different operating conditions (5mA, 5V versus 1mA, 5V). The gain specification reflects these measurement conditions. Suitability depends on application-specific biasing and gain requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All active substitute parts listed (DDTA115TUA-7-F, DDTA115GUA-7-F, DDTA113TUA-7-F, DDTA114TUA-7-F, DDTA114GUA-7-F, DDTA124TUA-7-F, DDTA124GUA-7-F, DDTA144GUA-7-F) are RoHS3 compliant with MSL 1 rating and REACH unaffected status, matching the original part.

Q: Can I use DDTA125TUA-7-F as a substitute?

A: No. DDTA125TUA-7-F is classified as obsolete and should not be used for new designs or applications requiring long-term supply assurance.

Q: What package format should I expect for substitute parts?

A: The DTA115TUAT106 uses UMT3 package designation. Diodes Incorporated substitutes use SOT-323 package designation. Both are equivalent SC-70 surface mount footprints with identical pin configurations and PCB landing patterns, enabling direct physical substitution.

Q: How do I select between DDTA115TUA-7-F and DDTA115GUA-7-F?

A: DDTA115TUA-7-F is the preferred choice for direct replacement due to identical R1 resistor configuration and DC current gain specifications. DDTA115GUA-7-F is suitable if higher inventory availability is prioritized and the application circuit can accommodate R2 configuration and the specified gain variation.

Q: Are there any compliance or certification differences between the original and substitute parts?

A: No. All recommended substitute parts maintain identical RoHS3 compliance, MSL 1 moisture sensitivity level, REACH unaffected status, and EAR99 export classification as the original DTA115TUAT106.

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