DSTF20100C Equivalent & Substitute Parts

Part Overview

The DSTF20100C is a Schottky diode array manufactured by Littelfuse Inc., configured as a 1 Pair Common Cathode arrangement with a maximum reverse voltage rating of 100 V and average rectified current of 10 A per diode. The device is packaged in a TO-220-3 Full Pack with isolated tab for through-hole mounting applications. This component is classified as Active product status and is ROHS3 compliant. Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or manufacturer availability changes while maintaining electrical and mechanical compatibility.

Substiute Parts

DSTF20100C
Littelfuse Inc.In Stock: 1098DSTF20100C Datasheet
DSTF20100C
Current Part
DSTF20100C
Littelfuse Inc.In Stock: 1098DSTF20100C Datasheet
DSTF20100C
Parametric Equivalent
WN3S20H100CXQ
WeEn SemiconductorsIn Stock: 6451WN3S20H100CXQ Datasheet
WN3S20H100CXQ
Parametric Equivalent

Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 10 A
Voltage - Forward (Vf) (Max) @ If 750 mV @ 10 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Operating Temperature - Junction -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the DSTF20100C are identified based on strict electrical and mechanical parameter matching. The substitution criteria are:

Critical Matching Parameters:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab

Parts meeting all critical parameters are classified as parametric equivalents and direct substitutes. Variations in secondary parameters such as Current - Reverse Leakage @ Vr or maximum junction temperature do not disqualify substitution when all critical electrical and mechanical specifications are satisfied.

Parameter Comparison

Parameter DSTF20100C (Littelfuse) WN3S20H100CXQ (WeEn Semiconductors)
Manufacturer Littelfuse Inc. WeEn Semiconductors
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10 A 10 A
Voltage - Forward (Vf) (Max) @ If 750 mV @ 10 A 750 mV @ 10 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 300 µA @ 100 V 50 µA @ 100 V
Operating Temperature - Junction (Max) 150°C 150°C
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab
Supplier Device Package ITO-220AB TO-220F
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active

Engineering Selection Recommendations

DSTF20100C (Littelfuse Inc.): Primary part selection. Active product status with established supply chain. ROHS3 compliant and REACH unaffected. Suitable for applications requiring standard Schottky diode array performance in TO-220-3 package format.

WN3S20H100CXQ (WeEn Semiconductors): Direct parametric equivalent. Active product status with higher inventory availability (6380 Pcs vs. 1040 Pcs). ROHS3 compliant. Lower reverse leakage current (50 µA vs. 300 µA @ 100 V) provides improved performance in low-leakage applications. Supplier device package designation differs (TO-220F vs. ITO-220AB) but mechanical and electrical compatibility is maintained. Selection between these parts is determined by availability, inventory requirements, and leakage current specifications for the target application.

Both parts satisfy all critical electrical and mechanical parameters for direct substitution in TO-220-3 through-hole mounting applications.

Frequently Asked Questions (FAQ)

Q: Can WN3S20H100CXQ replace DSTF20100C in existing designs?

A: Yes. Both parts meet identical critical specifications: 100 V reverse voltage, 10 A average rectified current per diode, 750 mV forward voltage at 10 A, fast recovery Schottky technology, and TO-220-3 Full Pack isolated tab package. Mechanical and electrical compatibility is confirmed.

Q: What is the difference between the supplier device packages ITO-220AB and TO-220F?

A: Both designations refer to the same TO-220-3 Full Pack with isolated tab mechanical form factor. The package designation difference reflects manufacturer nomenclature variation and does not affect physical or electrical compatibility.

Q: Does the lower reverse leakage current of WN3S20H100CXQ affect circuit design?

A: The WN3S20H100CXQ exhibits 50 µA reverse leakage at 100 V compared to 300 µA for DSTF20100C. This lower leakage is a performance advantage in applications sensitive to reverse current. No circuit redesign is required; the substitute part performs within or exceeds the original specification.

Q: Are both parts suitable for the full operating temperature range?

A: Yes. Both parts support junction operating temperatures from -55°C to 150°C, meeting standard industrial and commercial temperature requirements.

Q: What compliance certifications apply to both parts?

A: Both DSTF20100C and WN3S20H100CXQ are ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). DSTF20100C is additionally REACH unaffected. Both carry ECCN EAR99 classification.

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