DST847BDJ-7 Equivalent & Substitute Parts

Part Overview

The DST847BDJ-7 is a dual NPN bipolar junction transistor array manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This surface mount device operates at maximum collector currents of 100mA with a collector-emitter breakdown voltage of 45V, making it suitable for low-power signal processing circuits. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity rating. Substitute parts are identified when equivalent electrical and mechanical specifications are required due to inventory constraints, supply chain considerations, or design flexibility within specified parameter tolerances.

Substiute Parts

DST847BDJ-7

Diodes IncorporatedIn Stock: 30136DST847BDJ-7 Datasheet

Current PartRFQ

NST847BDP6T5G

onsemiIn Stock: 5241NST847BDP6T5G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DST847BDJ-7 with equivalent parts is determined by strict alignment of the following critical parameters:

Mandatory Matching Parameters:

• Transistor configuration: 2 NPN (Dual) array
• Maximum collector current: 100mA
• Collector-emitter breakdown voltage: 45V
• DC current gain (hFE): 200 minimum at specified bias conditions
• Collector cutoff current: 15nA maximum
• Package type: SOT-963 surface mount
• Operating temperature range: -55°C to 150°C
• Regulatory compliance: RoHS3 compliant

Allowable Parameter Variations: Substitute parts may differ in power dissipation rating and transition frequency specifications while maintaining full functional equivalence, provided all mandatory parameters remain within specified limits.

Parameter Comparison

Engineering Selection Recommendations

Both the DST847BDJ-7 and NST847BDP6T5G meet the core electrical and mechanical requirements for dual NPN transistor array applications within the specified parameter envelope. Selection between these parts is based on the following factors:

DST847BDJ-7 (Diodes Incorporated):

• Higher transition frequency (170MHz) suitable for higher-speed switching applications
• Lower saturation voltage (300mV) reduces power dissipation in saturated switching modes
• Lower maximum power rating (300mW) indicates optimized thermal characteristics for lower-power designs

NST847BDP6T5G (onsemi):

• Higher power dissipation capability (350mW) accommodates applications with greater thermal headroom
• Lower transition frequency (100MHz) appropriate for standard-speed switching circuits
• Higher saturation voltage (600mV) acceptable in applications where saturation voltage is not a critical parameter

Both parts carry active product status, full RoHS3 compliance, and unlimited moisture sensitivity rating, ensuring regulatory and environmental compatibility. Selection should be based on specific application requirements regarding switching speed, saturation characteristics, and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can NST847BDP6T5G replace DST847BDJ-7 in all applications?

A: NST847BDP6T5G is electrically equivalent for applications where transition frequency below 100MHz and saturation voltage of 600mV are acceptable. Applications requiring the higher 170MHz transition frequency or lower 300mV saturation voltage of the DST847BDJ-7 must evaluate performance impact before substitution.

Q: Are the package dimensions identical between these parts?

A: Both parts use SOT-963 surface mount packaging with identical mechanical specifications, allowing direct PCB footprint compatibility without layout modifications.

Q: What is the significance of the different saturation voltages?

A: Saturation voltage (Vce Sat) determines the voltage drop across the transistor when fully conducting. The DST847BDJ-7 exhibits 300mV saturation versus 600mV for the NST847BDP6T5G. In saturated switching applications, lower saturation voltage reduces power dissipation and heat generation. Applications operating in linear amplification mode are less sensitive to this parameter difference.

Q: Do both parts meet the same compliance standards?

A: Yes. Both DST847BDJ-7 and NST847BDP6T5G are RoHS3 compliant, REACH unaffected, and carry ECCN EAR99 classification with identical HTSUS coding, ensuring equivalent regulatory and environmental compliance.

Q: What does the transition frequency difference mean for circuit design?

A: Transition frequency (fT) indicates the maximum frequency at which the transistor maintains useful current gain. The DST847BDJ-7 at 170MHz supports higher-frequency switching and signal processing compared to the NST847BDP6T5G at 100MHz. Applications operating below 100MHz are unaffected by this difference.

Q: Are moisture sensitivity levels the same?

A: Yes. Both parts carry MSL 1 (Unlimited) rating, indicating no moisture-related storage or handling restrictions and identical solderability characteristics.