DST20100C Schottky Diode Array Equivalent & Substitute Parts

Part Overview

The DST20100C is a Schottky diode array manufactured by Littelfuse Inc., configured as 1 pair common cathode with 100V reverse voltage rating and 10A average rectified current per diode. The device is packaged in TO-220-3 through-hole format and is currently active in production status with 902 pieces in stock.

Substitute parts are necessary when the primary part becomes unavailable, when alternative manufacturers offer improved electrical characteristics, or when design requirements necessitate enhanced performance specifications such as lower forward voltage drop, reduced reverse leakage current, or extended operating temperature ranges.

Key Parameters

Parameter	Value	Unit
Diode Configuration	1 Pair Common Cathode	—
Technology	Schottky	—
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io) (per Diode)	10	A
Voltage - Forward (Vf) (Max) @ If	550 mV @ 10 A	—
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	300	µA @ 100 V
Operating Temperature - Junction	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the DST20100C is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Diode Configuration: Must be 1 Pair Common Cathode
Technology: Must be Schottky
Voltage - DC Reverse (Vr) (Max): Must be ≥ 100V
Current - Average Rectified (Io) (per Diode): Must be ≥ 10A
Mounting Type: Must be Through Hole
Package / Case: Must be TO-220-3

Secondary Compatibility Parameters:

Voltage - Forward (Vf): Lower values indicate improved efficiency
Current - Reverse Leakage @ Vr: Lower values indicate reduced standby current
Operating Temperature - Junction: Extended ranges provide design flexibility
Speed: Must maintain Fast Recovery ≤ 500ns, > 200mA (Io)
RoHS Status: Must maintain ROHS3 Compliance

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria at 10A rating) and Higher Current Alternatives (exceeding 10A rating while maintaining all other primary specifications).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io (per Diode) [A]	Vf (Max) [mV]	Ir @ Vr [µA]	Tj (Max) [°C]	Status
DST20100C	Littelfuse Inc.	100	10	550 @ 10A	300 @ 100V	150	Active
FYP1010DNTU	onsemi	100	10	950 @ 10A	1000 @ 100V	150	Obsolete
MBR10100CT-BP	Micro Commercial Co	100	10	850 @ 5A	200 @ 100V	150	Active
MBR10100CT-G1	Diodes Incorporated	100	5	840 @ 5A	50 @ 100V	150	Active
MBR16100CTG	onsemi	100	8	740 @ 8A	100 @ 100V	175	Obsolete
MBR20100CT-BP	Micro Commercial Co	100	10	950 @ 20A	150 @ 100V	150	Active
MBR20100CT-G1	Diodes Incorporated	100	10	840 @ 10A	50 @ 100V	175	Active
MBR30100CT-G1	Diodes Incorporated	100	15	850 @ 15A	100 @ 100V	150	Active
MBR30H100CTG	onsemi	100	15	800 @ 15A	4.5 @ 100V	175	Active
MBR41H100CTG	onsemi	100	20	800 @ 20A	10 @ 100V	175	Active
MBR60H100CTG	onsemi	100	30	840 @ 30A	10 @ 100V	175	Active

Engineering Selection Recommendations

Direct Equivalents (10A Rating, Active Status):

MBR20100CT-BP (Micro Commercial Co) and MBR20100CT-G1 (Diodes Incorporated) are the primary active substitutes meeting all primary criteria. MBR20100CT-G1 offers superior electrical characteristics with 840 mV forward voltage drop at 10A, reduced reverse leakage current of 50 µA, and extended maximum junction temperature to 175°C. This part carries AEC-Q101 automotive qualification. MBR20100CT-BP maintains identical current and voltage ratings with 150 µA reverse leakage current.

Higher Current Alternatives (Active Status):

MBR30100CT-G1 (15A), MBR30H100CTG (15A), MBR41H100CTG (20A), and MBR60H100CTG (30A) provide increased current capacity while maintaining 100V reverse voltage rating and TO-220-3 packaging. These parts are suitable for applications requiring design margin or future current expansion. MBR30H100CTG and MBR41H100CTG feature onsemi SWITCHMODE™ series designation with maximum junction temperature of 175°C and significantly reduced reverse leakage current (4.5 µA and 10 µA respectively).

Obsolete Parts (Not Recommended for New Designs):

FYP1010DNTU (onsemi) and MBR16100CTG (onsemi) are marked obsolete and should not be selected for new designs despite meeting primary electrical criteria. FYP1010DNTU exhibits higher forward voltage drop (950 mV) and significantly elevated reverse leakage current (1000 µA) compared to the DST20100C.

Compliance Considerations:

All recommended substitute parts maintain ROHS3 compliance and EAR99 export classification consistent with the DST20100C. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all active substitutes, matching the original part specification.

Frequently Asked Questions (FAQ)

Q: Can MBR10100CT-G1 be used as a direct substitute for DST20100C?

A: MBR10100CT-G1 does not meet the primary substitution criterion of 10A average rectified current per diode. This part is rated at 5A and would be undersized for applications designed for the DST20100C 10A specification. Use only in applications where 5A current capacity is sufficient.

Q: What is the advantage of selecting MBR20100CT-G1 over MBR20100CT-BP?

A: MBR20100CT-G1 provides three measurable advantages: (1) lower forward voltage drop of 840 mV at 10A versus 850 mV, (2) significantly reduced reverse leakage current of 50 µA versus 200 µA, and (3) extended maximum junction temperature of 175°C versus 150°C. MBR20100CT-G1 also carries AEC-Q101 automotive qualification. These characteristics result in improved efficiency and thermal performance.

Q: Are higher current rated parts (15A, 20A, 30A) compatible with DST20100C applications?

A: Yes. Higher current rated parts maintain identical 100V reverse voltage rating, 1 Pair Common Cathode configuration, TO-220-3 packaging, and fast recovery Schottky technology. These parts are electrically compatible and provide design margin for current transients or future application expansion. No circuit modification is required.

Q: Why is FYP1010DNTU listed as obsolete?

A: FYP1010DNTU is marked with Obsolete product status by onsemi. While it meets primary electrical criteria, obsolete parts face supply discontinuation risk and should not be selected for new designs or long-term production applications.

Q: What is the significance of the SWITCHMODE™ series designation in onsemi parts?

A: SWITCHMODE™ is an onsemi product series designation indicating optimized performance for switching power supply applications. Parts bearing this designation (MBR30H100CTG, MBR41H100CTG, MBR60H100CTG) feature enhanced characteristics including reduced reverse leakage current and extended maximum junction temperature (175°C), making them suitable for high-frequency switching environments.

Q: Can DST20100C be replaced with a lower current rated part to reduce cost?

A: No. Substitution with lower current rated parts (such as MBR10100CT-G1 at 5A) violates the primary substitution criterion requiring minimum 10A average rectified current per diode. Using undersized components creates risk of thermal stress, component failure, and circuit malfunction.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All listed substitute parts are packaged in TO-220-3 through-hole format, ensuring mechanical and thermal interface compatibility with DST20100C applications. No PCB layout modification is required for package substitution.

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