DSK10C Equivalent & Substitute Parts

Part Overview

The DSK10C is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 1 A average rectified current in an axial through-hole package (R-1). This component is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A	V
Speed	Standard Recovery >500ns, > 200mA (Io)	-
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Operating Temperature - Junction (Max)	150	°C
Mounting Type	Through Hole	-
Package / Case	R-1, Axial	-

Substitute Part Grouping Explanation

Substitute parts for the DSK10C are selected based on strict electrical parameter matching within the following criteria:

Primary Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 200 V (exact match required)
Current - Average Rectified (Io): 1 A (exact match required)
Mounting Type: Through Hole (required for form factor compatibility)
Operating Temperature - Junction: minimum 150°C (equal to or exceeding DSK10C specification)

Secondary Compatibility Factors:

Forward voltage (Vf) at 1 A: acceptable range 0.95 V to 1.3 V
Reverse leakage current: acceptable range 1 µA to 10 µA @ 200 V
Recovery speed: Standard Recovery (>500ns) or Fast Recovery (≤500ns) both acceptable
Package variants: DO-204AL (DO-41), Axial, and R-1 configurations all compatible

All substitute parts listed maintain electrical equivalence to the DSK10C within these defined parameters. Package form factor differences (axial lead spacing and diameter) are noted but do not preclude functional substitution in through-hole applications.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	Speed	Ir @ 200V [µA]	Tj (Max) [°C]	Package	Status
DSK10C	onsemi	200	1	1.1	Standard >500ns	10	150	R-1, Axial	Obsolete
1N4003G	Taiwan Semiconductor Corporation	200	1	1.0	Standard >500ns	5	150	DO-204AL, DO-41	Active
EGP10D	Fairchild Semiconductor	200	1	0.95	Fast ≤500ns	5	150	DO-204AL, DO-41	Active
RGP10D	Fairchild Semiconductor	200	1	1.3	Fast ≤500ns	5	175	DO-204AL, DO-41	Active
UF4003	Diotec Semiconductor	200	1	1.0	Fast ≤500ns	5	175	DO-204AC, DO-41	Active
1N3611	Microchip Technology	200	1	1.1	Standard >500ns	1	175	A, Axial	Active
1N3611GP-E3/54	Vishay General Semiconductor - Diodes Division	200	1	1.0	Standard >500ns	1	175	DO-204AL, DO-41	Active
1N4003-T	Diodes Incorporated	200	1	1.0	Standard >500ns	5	150	DO-204AL, DO-41	Last Time Buy
1N4935-E3/54	Vishay General Semiconductor - Diodes Division	200	1	1.2	Fast ≤500ns	5	150	DO-204AL, DO-41	Active
1N4935-T	Diodes Incorporated	200	1	1.2	Fast ≤500ns	5	150	DO-204AL, DO-41	Active
1N4935G-T	Diodes Incorporated	200	1	1.2	Fast ≤500ns	5	150	DO-204AL, DO-41	Active

Engineering Selection Recommendations

Primary Recommendation - Active Status with RoHS Compliance:

1N3611GP-E3/54 (Vishay General Semiconductor - Diodes Division) is the preferred substitute. This part maintains exact electrical equivalence to the DSK10C (200 V, 1 A, 1.0 V forward voltage, standard recovery speed) while offering active product status, RoHS3 compliance, and extended operating temperature range (-65°C to 175°C). The DO-204AL (DO-41) package is mechanically compatible with through-hole PCB layouts.

Secondary Recommendations - Active Status:

1N4003G (Taiwan Semiconductor Corporation) provides electrical equivalence with active status and RoHS3 compliance. Forward voltage is 1.0 V, and reverse leakage is reduced to 5 µA, both favorable characteristics. Operating temperature range is -55°C to 150°C.

1N3611 (Microchip Technology) offers active status with axial package compatibility matching the DSK10C form factor. Extended operating temperature range (-65°C to 175°C) and reduced reverse leakage (1 µA) are provided, though RoHS compliance status is non-compliant.

Fast Recovery Alternatives - Active Status:

EGP10D (Fairchild Semiconductor) and UF4003 (Diotec Semiconductor) provide fast recovery characteristics (≤500ns, trr 50 ns) with 200 V, 1 A ratings. These parts are suitable for applications requiring improved switching performance. Both are active and RoHS3 compliant.

Avoid - Limited Availability:

1N4003-T (Diodes Incorporated) carries Last Time Buy status, indicating discontinued production and limited future availability.

Frequently Asked Questions (FAQ)

Q: Can the DSK10C be directly replaced with any of the listed substitute parts?

A: Yes, all listed substitute parts maintain the critical electrical parameters of 200 V reverse voltage and 1 A average rectified current. Direct functional replacement is supported. Physical package differences (axial lead spacing) may require PCB layout verification for through-hole mounting.

Q: What is the difference between Standard Recovery and Fast Recovery diodes in these substitutes?

A: Standard Recovery diodes (DSK10C, 1N4003G, 1N3611, 1N3611GP-E3/54, 1N4003-T) have recovery times exceeding 500 ns. Fast Recovery diodes (EGP10D, RGP10D, UF4003, 1N4935 series) have recovery times of 50 to 200 ns. Fast Recovery types reduce switching losses and are suitable for higher-frequency applications. Both types are electrically compatible for 200 V, 1 A DC rectification.

Q: Are all substitute parts RoHS compliant?

A: Most substitute parts are RoHS3 compliant (1N4003G, EGP10D, RGP10D, UF4003, 1N3611GP-E3/54, 1N4003-T, 1N4935-E3/54, 1N4935-T, 1N4935G-T). The 1N3611 from Microchip Technology is RoHS non-compliant. Compliance requirements should be verified against design specifications.

Q: What is the significance of the operating temperature range differences?

A: The DSK10C specifies a maximum junction temperature of 150°C. Substitute parts with extended ranges (e.g., 1N3611 at -65°C to 175°C, RGP10D at -65°C to 175°C) provide additional thermal margin and are suitable for applications with elevated ambient temperatures or thermal stress. Parts with identical or lower maximum ratings (1N4003G at 150°C, 1N4003-T at 150°C) are directly equivalent in thermal performance.

Q: How do forward voltage differences affect circuit performance?

A: Forward voltage variations (0.95 V to 1.3 V at 1 A) affect power dissipation and voltage drop across the diode. Lower forward voltage (EGP10D at 0.95 V) reduces heat generation. Higher forward voltage (RGP10D at 1.3 V) increases dissipation. For most general-purpose rectification applications, these differences are negligible. Critical applications should verify voltage drop impact on circuit regulation and efficiency.

Q: What packaging options are available for through-hole mounting?

A: The DSK10C uses R-1 axial package. Substitute parts are available in DO-204AL (DO-41) axial packages, which are mechanically compatible with standard through-hole PCB layouts. The 1N3611 from Microchip Technology is available in A (Axial) package, providing closest form factor match. All axial packages support standard through-hole soldering processes.

Q: Why is the DSK10C classified as obsolete?

A: Obsolete status indicates that onsemi has discontinued production and support for this part. Active substitute parts from current manufacturers (Vishay, Diodes Incorporated, Taiwan Semiconductor Corporation, Fairchild Semiconductor, Diotec Semiconductor, Microchip Technology) ensure long-term availability, supply chain stability, and access to current manufacturing quality standards and certifications.

Q: Can reverse leakage current differences impact circuit design?

A: The DSK10C specifies 10 µA reverse leakage at 200 V. Most substitute parts specify 5 µA or lower (1N3611 and 1N3611GP-E3/54 at 1 µA). Lower reverse leakage reduces standby current and improves circuit efficiency. For general-purpose rectification, these differences are typically insignificant unless the application involves high-impedance circuits or precision analog stages.

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