DSC5G0200L Equivalent & Substitute Parts

Part Overview

The DSC5G0200L is an RF transistor manufactured by Panasonic Electronic Components, classified as an NPN bipolar junction transistor (BJT) designed for RF applications. This component operates at 20V collector-emitter breakdown voltage with a transition frequency of 650MHz and maximum power dissipation of 150mW in a surface mount SMini3-F2-B package. The part is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active product lines that meet the electrical and mechanical requirements of the original application.

Substiute Parts

DSC5G0200L
Panasonic Electronic ComponentsIn Stock: 2301DSC5G0200L Datasheet
DSC5G0200L
Current Part
2SC4215-Y(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 26702SC4215-Y(TE85L,F) Datasheet
2SC4215-Y(TE85L,F)
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BFP540ESDH6327XTSA1
Infineon TechnologiesIn Stock: 1480BFP540ESDH6327XTSA1 Datasheet
BFP540ESDH6327XTSA1
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BFP650FH6327XTSA1
Infineon TechnologiesIn Stock: 18699BFP650FH6327XTSA1 Datasheet
BFP650FH6327XTSA1
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BFP760H6327XTSA1
Infineon TechnologiesIn Stock: 800347BFP760H6327XTSA1 Datasheet
BFP760H6327XTSA1
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BFP842ESDH6327XTSA1
Infineon TechnologiesIn Stock: 9624BFP842ESDH6327XTSA1 Datasheet
BFP842ESDH6327XTSA1
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HFA3102BZ
Renesas Electronics CorporationIn Stock: 1450HFA3102BZ Datasheet
HFA3102BZ
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MAX2602ESA+
Analog Devices Inc./Maxim IntegratedIn Stock: 1203MAX2602ESA+ Datasheet
MAX2602ESA+
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Key Parameters

Parameter DSC5G0200L Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 20V V
Frequency - Transition 650MHz MHz
Noise Figure (Typ @ f) 3.3dB @ 100MHz dB
Gain 24dB dB
Power - Max 150mW mW
DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 1mA, 6V
Current - Collector (Ic) (Max) 15mA mA
Operating Temperature (TJ) 150°C °C
Mounting Type Surface Mount
Package / Case SC-85 (SMini3-F2-B)
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DSC5G0200L requires evaluation of electrical performance parameters that define RF transistor functionality. The primary substitution criteria are:

Critical Electrical Parameters:

  • Transistor Type: NPN configuration
  • Voltage Rating: Collector-emitter breakdown voltage must equal or exceed 20V
  • Frequency Performance: Transition frequency capability at or above 650MHz
  • Power Dissipation: Maximum power rating at or above 150mW
  • Current Handling: Maximum collector current at or above 15mA
  • Gain and Noise Figure: Performance metrics within acceptable operating ranges

Mechanical and Environmental Criteria:

  • Mounting Type: Surface mount configuration
  • Operating Temperature: Maximum junction temperature of 150°C
  • RoHS Compliance: Compliance with RoHS standards
  • Moisture Sensitivity: MSL rating of 1 or equivalent

The substitute parts identified operate across a spectrum of frequency capabilities and voltage ratings. Parts with higher frequency ratings (10GHz to 60GHz) and lower voltage ratings (3.7V to 5V) represent advanced RF designs suitable for higher-frequency applications but require circuit-level voltage compatibility assessment. Parts with moderate frequency ratings (550MHz to 1GHz) and voltage ratings (12V to 15V) provide closer electrical alignment to the original DSC5G0200L specification.

Parameter Comparison

Parameter DSC5G0200L 2SC4215-Y(TE85L,F) BFP540ESDH6327XTSA1 BFP650FH6327XTSA1 BFP760H6327XTSA1 BFP842ESDH6327XTSA1 HFA3102BZ MAX2602ESA+
Transistor Type NPN NPN NPN NPN NPN NPN 6 NPN NPN
Voltage - Collector Emitter Breakdown (Max) 20V 30V 5V 4.5V 4V 3.7V 12V 15V
Frequency - Transition 650MHz 550MHz 30GHz 42GHz 45GHz 60GHz 10GHz 1GHz
Noise Figure (Typ @ f) 3.3dB @ 100MHz 2dB ~ 5dB @ 100MHz 0.9dB ~ 1.4dB @ 1.8GHz 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz 0.65dB @ 3.5GHz 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz 3.3dB @ 836MHz
Gain 24dB 17dB ~ 23dB 21.5dB 11dB ~ 21.5dB 16.5dB ~ 29dB 26dB 12.4dB ~ 17.5dB 11.6dB
Power - Max 150mW 100mW 250mW 500mW 240mW 120mW 250mW 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 1mA, 6V 100 @ 1mA, 6V 50 @ 20mA, 3.5V 110 @ 80mA, 3V 160 @ 35mA, 3V 150 @ 15mA, 2.5V 40 @ 10mA, 3V 100 @ 250mA, 3V
Current - Collector (Ic) (Max) 15mA 20mA 80mA 150mA 70mA 40mA 30mA 1.2A
Operating Temperature (TJ) 150°C 125°C 150°C 150°C 150°C 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-85 (SMini3-F2-B) SC-70, SOT-323 SC-82A, SOT-343 4-SMD, Flat Leads (4-TSFP) SC-82A, SOT-343 SC-82A, SOT-343 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) Exposed Pad
RoHS Status RoHS Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 3 (168 Hours) 1 (Unlimited)

Engineering Selection Recommendations

2SC4215-Y(TE85L,F) - Toshiba Semiconductor and Storage

This part provides the closest electrical alignment to the DSC5G0200L in terms of frequency performance (550MHz transition frequency) and voltage rating (30V breakdown). The 2SC4215-Y operates at a lower maximum power rating (100mW versus 150mW) and lower maximum collector current (20mA versus 15mA), making it suitable for applications with reduced power requirements. The part is in active product status with ROHS3 compliance. Package transition from SC-85 to SC-70/SOT-323 requires PCB layout modification. Operating temperature maximum of 125°C is lower than the original specification.

BFP540ESDH6327XTSA1 - Infineon Technologies

This part operates at significantly higher frequency (30GHz) with reduced voltage rating (5V). It is suitable for applications requiring higher-frequency RF performance but operating at lower supply voltages. The part is in active product status with ROHS3 compliance and unlimited MSL rating. Package change to SC-82A/SOT-343 requires PCB redesign. Maximum collector current of 80mA and power rating of 250mW exceed original specifications.

BFP650FH6327XTSA1 - Infineon Technologies

This part operates at 42GHz transition frequency with 4.5V voltage rating and 500mW power dissipation. It is designed for high-frequency RF applications with higher power handling than the original part. The part is in active product status with ROHS3 compliance and unlimited MSL rating. Package configuration is 4-TSFP with flat leads, requiring significant PCB layout changes. Maximum collector current of 150mA substantially exceeds original specifications.

BFP760H6327XTSA1 - Infineon Technologies

This part operates at 45GHz transition frequency with 4V voltage rating and 240mW power dissipation. It provides high-frequency RF performance with moderate power handling. The part is in active product status with ROHS3 compliance and unlimited MSL rating. Package is SC-82A/SOT-343, requiring PCB modification. Maximum collector current of 70mA exceeds original specifications. Inventory availability is substantial (800,300 pieces).

BFP842ESDH6327XTSA1 - Infineon Technologies

This part operates at 60GHz transition frequency with 3.7V voltage rating and 120mW power dissipation. It is designed for ultra-high-frequency RF applications with power rating below the original specification. The part is in active product status with ROHS3 compliance and unlimited MSL rating. Package is SC-82A/SOT-343, requiring PCB modification. Maximum collector current of 40mA exceeds original specifications. Gain of 26dB closely matches the original 24dB specification.

HFA3102BZ - Renesas Electronics Corporation

This part is a multi-transistor array (6 NPN) operating at 10GHz transition frequency with 12V voltage rating and 250mW power dissipation. It is suitable for integrated RF applications requiring multiple transistor stages. The part is in active product status with ROHS3 compliance. Moisture sensitivity level of 3 (168 hours) requires controlled storage conditions. Package is 14-SOIC, significantly different from the original SMini3-F2-B configuration. Maximum collector current of 30mA exceeds original specifications.

MAX2602ESA+ - Analog Devices Inc./Maxim Integrated

This part operates at 1GHz transition frequency with 15V voltage rating and 6.4W power dissipation. It is designed for high-power RF applications with substantially higher power handling than the original part. The part is in active product status with ROHS3 compliance and unlimited MSL rating. Package is 8-SOIC with exposed pad, requiring significant PCB redesign. Maximum collector current of 1.2A substantially exceeds original specifications. This part is suitable for applications requiring higher power output than the DSC5G0200L.

Frequently Asked Questions (FAQ)

Q: Can the 2SC4215-Y(TE85L,F) directly replace the DSC5G0200L without circuit modifications?

A: The 2SC4215-Y provides similar frequency performance (550MHz versus 650MHz) and higher voltage rating (30V versus 20V), making it electrically compatible for most applications. However, the package change from SC-85 (SMini3-F2-B) to SC-70/SOT-323 requires PCB layout modification. The lower maximum power rating (100mW versus 150mW) and lower operating temperature maximum (125°C versus 150°C) must be evaluated against application requirements.

Q: Why do the Infineon BFP-series parts (BFP540, BFP650, BFP760, BFP842) have such different voltage ratings and frequency capabilities?

A: The Infineon BFP-series represents a progression of RF transistor designs optimized for increasingly higher frequencies. As transition frequency increases (30GHz to 60GHz), the maximum voltage rating decreases (5V to 3.7V) due to fundamental semiconductor physics constraints. These parts are designed for specific frequency bands and applications, not as direct replacements for lower-frequency designs. Selection depends on the target operating frequency of the application.

Q: Is the HFA3102BZ suitable as a replacement if my application uses multiple transistor stages?

A: The HFA3102BZ is a 6-transistor array in a 14-SOIC package, designed for integrated multi-stage RF applications. It is suitable only if your circuit design can accommodate the integrated array configuration. The individual transistor characteristics differ from the DSC5G0200L, and the package footprint is substantially different. This part is not a pin-compatible replacement but rather an alternative for applications requiring integrated multi-transistor solutions.

Q: What is the significance of the MSL (Moisture Sensitivity Level) rating difference between parts?

A: The DSC5G0200L and most substitute parts have MSL 1 (Unlimited), meaning they can be stored indefinitely without moisture control. The HFA3102BZ has MSL 3 (168 hours), requiring that the component be used within 168 hours of package opening if stored in standard conditions. MSL 3 parts require controlled storage environments or desiccant packaging to prevent moisture absorption, which can cause solder joint failures during reflow.

Q: Can I use the MAX2602ESA+ in a circuit designed for the DSC5G0200L?

A: The MAX2602ESA+ operates at 1GHz transition frequency with 15V voltage rating and 6.4W power dissipation. While the voltage rating is compatible, the substantially higher power rating and lower frequency performance indicate this part is designed for different applications. The 8-SOIC package with exposed pad is significantly different from the original SMini3-F2-B package. This part is suitable for high-power RF applications but not as a direct replacement for the DSC5G0200L.

Q: What package considerations are critical when selecting a substitute part?

A: The original DSC5G0200L uses SC-85 (SMini3-F2-B) package. Substitute parts use SC-70, SC-82A, SOT-343, 4-TSFP, 8-SOIC, and 14-SOIC packages. Each package has different pin configurations, footprint dimensions, and thermal characteristics. PCB layout must be redesigned to accommodate the new package, including trace routing, via placement, and thermal management. Package selection affects circuit performance, particularly for RF applications where trace impedance and component placement are critical.

Q: How do I determine which substitute part is appropriate for my specific application?

A: Evaluate your application requirements against the following parameters: (1) Operating frequency range required; (2) Supply voltage available; (3) Maximum power dissipation needed; (4) Maximum collector current required; (5) Noise figure requirements; (6) Gain requirements; (7) Package constraints; (8) Environmental storage conditions (MSL rating). Compare these requirements against the parameter table provided. Parts with frequency ratings significantly higher than your application requirement may introduce unnecessary complexity and cost.

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