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Equivalent & Substitute Parts Reference for DSB3A40
Part Overview
The DSB3A40, manufactured by Microchip Technology, is an active Schottky diode with a voltage rating of 40 V and a current rating of 3A, intended for through-hole mounting in the DO-204AH axial package. It is used within the diodes, rectifiers product category for applications requiring fast recovery and high efficiency. Finding alternative models is necessary for situations such as RoHS compliance requirements, supply chain logistics, or matching mechanical mounting specifications.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Operating Temperature - Junction | -65°C ~ 125°C |
| RoHS Status | RoHS non-compliant |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitute parts for Schottky diodes in the diodes, rectifiers category are selected strictly based on these key parameters: technology, voltage rating, current rating, forward voltage at specified current, reverse leakage current, speed, mounting type, package/case, and operating temperature range. Only devices matching these characteristics are included as equivalents, regardless of manufacturer or additional features.
Parameter Comparison
| Parameter | DSB3A40 | 1N5822-TP | SB340-E3/54 | SB340-E3/73 |
|---|---|---|---|---|
| Technology | Schottky | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 40 V | 40 V | 40 V |
| Current - Average Rectified (Io) | 3A | 3A | 3A | 3A |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A | 525 mV @ 3 A | 490 mV @ 3 A | 490 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V | 500 µA @ 40 V | 500 µA @ 40 V | 500 µA @ 40 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial |
| Operating Temperature - Junction | -65°C ~ 125°C | -55°C ~ 125°C | -65°C ~ 125°C | -65°C ~ 125°C |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Product Status | Active | Active | Active | Active |
Engineering Selection Recommendations
Selection should consider product status and compliance. DSB3A40 is RoHS non-compliant, while 1N5822-TP, SB340-E3/54, and SB340-E3/73 are ROHS3 compliant and active, making these substitutes suitable for applications with RoHS requirements.
Frequently Asked Questions (FAQ)
Q: What are the critical parameters for substituting the DSB3A40 diode?
A: The substitution is based strictly on technology (Schottky), voltage and current ratings, forward voltage, reverse leakage, recovery speed, mounting type, package/case, and operating temperature.
Q: Can I use a DO-201AD package instead of DO-204AH, DO-35 for through-hole mounting?
A: Both DO-201AD and DO-204AH are axial and support through-hole mounting. Mechanical compatibility should be verified with the layout.
Q: Are the substitute parts suitable for environments requiring RoHS compliance?
A: 1N5822-TP, SB340-E3/54, and SB340-E3/73 are ROHS3 compliant.
Q: Are there differences in the reverse leakage current among substitutes?
A: Yes, DSB3A40 has 100 µA @ 40 V, while substitutes specify 500 µA @ 40 V.
Q: Is operating temperature a concern for substitution?
A: All listed substitutes operate within similar temperature ranges, ensuring compatibility in typical conditions.
Q: Do substitutes offer the same electrical performance in terms of forward voltage and recovery speed?
A: Forward voltage and recovery speed parameters are closely matched among all parts, supporting equivalent performance in fast recovery diode applications.
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