DSA80C100PB Equivalent & Substitute Parts

Part Overview

The DSA80C100PB is a Schottky diode array manufactured by IXYS, configured as 1 pair common cathode with 100 V reverse voltage rating and 40 A average rectified current per diode. The device is packaged in TO-220-3 through-hole format and maintains active product status with full RoHS3 compliance.

Substitute parts are necessary when the DSA80C100PB reaches end-of-life, experiences supply constraints, or when design requirements permit operation at lower current ratings while maintaining voltage and package compatibility. Equivalent parts must satisfy the core electrical parameters: 100 V DC reverse voltage, Schottky technology, 1 pair common cathode configuration, fast recovery characteristics, and TO-220-3 through-hole mounting.

Key Parameters

Parameter	Value	Unit	Specification Basis
Manufacturer Part Number	DSA80C100PB	—	IXYS
Diode Configuration	1 Pair Common Cathode	—	Functional requirement
Technology	Schottky	—	Functional requirement
Voltage - DC Reverse (Vr) Max	100	V	Critical electrical parameter
Current - Average Rectified (Io) per Diode	40	A	Primary current rating
Voltage - Forward (Vf) Max @ If	910 mV @ 40 A	mV	Electrical characteristic
Speed - Fast Recovery	≤ 500 ns, > 200 mA (Io)	ns	Switching characteristic
Current - Reverse Leakage @ Vr	700	µA @ 100 V	Leakage specification
Operating Temperature - Junction	−55 to 175	°C	Thermal operating range
Mounting Type	Through Hole	—	PCB assembly requirement
Package / Case	TO-220-3	—	Physical form factor
RoHS Status	ROHS3 Compliant	—	Environmental compliance
Product Status	Active	—	Availability indicator

Substitute Part Grouping Explanation

Substitution of the DSA80C100PB is determined by strict adherence to the following mandatory parameters:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) Max: 100 V (exact match required)
Diode Configuration: 1 Pair Common Cathode (exact match required)
Technology: Schottky (exact match required)
Mounting Type: Through Hole (exact match required)
Package / Case: TO-220-3 (exact match required)
Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io) (exact match required)

Allowable Variation Parameters:

Current - Average Rectified (Io) per Diode: May be lower than 40 A (downgrades acceptable; upgrades not applicable)
Voltage - Forward (Vf) Max @ If: Variation permitted within device-specific ratings
Current - Reverse Leakage @ Vr: Variation permitted within device-specific ratings
Operating Temperature - Junction: May differ; minimum −55°C and maximum ≥ 150°C acceptable
Product Status: Active or Obsolete (both acceptable for substitution purposes)
RoHS Status: ROHS3 Compliant (required)

Substitute parts are grouped by current rating: 5 A, 8 A, 10 A, 15 A, and 20 A devices. Lower current ratings are suitable for applications where the DSA80C100PB's 40 A capability exceeds system requirements. All substitute parts maintain 100 V reverse voltage, Schottky technology, common cathode configuration, and TO-220-3 packaging.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) V	Io (per Diode) A	Vf (Max) mV	Vf Test Condition	Ir @ Vr µA	Tj (Min–Max) °C	Package	Product Status	RoHS
DSA80C100PB	IXYS	100	40	910	@ 40 A	700 @ 100 V	−55 to 175	TO-220-3	Active	ROHS3
FYP1010DNTU	onsemi	100	10	950	@ 10 A	1000 @ 100 V	−65 to 150	TO-220-3	Obsolete	ROHS3
MBR10100CT	Taiwan Semiconductor Corporation	100	10	950	@ 10 A	100 @ 100 V	−55 to 150	TO-220-3	Discontinued at DiGi Electronics	ROHS3
MBR10100CT-BP	Micro Commercial Co	100	10	850	@ 5 A	200 @ 100 V	−55 to 150	TO-220-3	Active	ROHS3
MBR10100CT-G1	Diodes Incorporated	100	5	840	@ 5 A	50 @ 100 V	−55 to 150	TO-220-3	Active	ROHS3
MBR16100CTG	onsemi	100	8	740	@ 8 A	100 @ 100 V	−65 to 175	TO-220-3	Obsolete	ROHS3
MBR20100CT-BP	Micro Commercial Co	100	10	950	@ 20 A	150 @ 100 V	−55 to 150	TO-220-3	Active	ROHS3
MBR20100CT-G1	Diodes Incorporated	100	10	840	@ 10 A	50 @ 100 V	−55 to 175	TO-220-3	Active	ROHS3
MBR30100CT-G1	Diodes Incorporated	100	15	850	@ 15 A	100 @ 100 V	−55 to 150	TO-220-3	Active	ROHS3
MBR30H100CTG	onsemi	100	15	800	@ 15 A	4.5 @ 100 V	−55 to 175	TO-220-3	Active	ROHS3
MBR41H100CTG	onsemi	100	20	800	@ 20 A	10 @ 100 V	−55 to 175	TO-220-3	Active	ROHS3

Engineering Selection Recommendations

Active Product Status Preference: MBR10100CT-BP, MBR10100CT-G1, MBR20100CT-BP, MBR20100CT-G1, MBR30100CT-G1, MBR30H100CTG, and MBR41H100CTG maintain active product status and are recommended for new designs and long-term supply assurance.

Obsolete Product Consideration: FYP1010DNTU and MBR16100CTG are obsolete or discontinued. These parts are acceptable only when existing inventory is available and supply continuity is not a design requirement.

Current Rating Selection:

5 A Rating (MBR10100CT-G1): Suitable for applications requiring ≤ 5 A per diode. Lowest current option with active status.
8 A Rating (MBR16100CTG): Intermediate current option; obsolete status limits suitability.
10 A Rating (MBR10100CT-BP, MBR20100CT-BP, MBR20100CT-G1): Mid-range current option with multiple active manufacturers. MBR20100CT-G1 offers extended temperature range (−55 to 175°C).
15 A Rating (MBR30100CT-G1, MBR30H100CTG): Higher current option. MBR30H100CTG offers superior reverse leakage performance (4.5 µA vs. 100 µA).
20 A Rating (MBR41H100CTG): Highest current option among substitutes; approaches DSA80C100PB capability at 20 A.

Temperature Range Consideration: Applications requiring −55 to 175°C operation are supported by MBR16100CTG, MBR20100CT-G1, MBR30H100CTG, and MBR41H100CTG. Standard −55 to 150°C range is supported by remaining active parts.

Compliance Verification: All substitute parts are ROHS3 compliant and REACH unaffected, matching the DSA80C100PB environmental compliance profile.

Frequently Asked Questions (FAQ)

Q1: Can MBR10100CT-G1 (5 A) replace DSA80C100PB (40 A) in all applications?

A: No. MBR10100CT-G1 is suitable only for applications where the maximum required current per diode does not exceed 5 A. The 100 V reverse voltage rating and Schottky technology are identical, but current capacity is reduced by 87.5%. Circuit design must accommodate this lower current rating.

Q2: What is the difference between MBR20100CT-BP and MBR20100CT-G1?

A: Both are 10 A rated devices with 100 V reverse voltage in TO-220-3 packaging. MBR20100CT-G1 (Diodes Incorporated) offers extended junction temperature range (−55 to 175°C vs. −55 to 150°C) and lower reverse leakage (50 µA vs. 150 µA). MBR20100CT-BP (Micro Commercial Co) is also active and suitable for standard temperature applications.

Q3: Why is MBR30H100CTG preferred over MBR30100CT-G1 despite identical 15 A rating?

A: MBR30H100CTG exhibits significantly lower reverse leakage current (4.5 µA @ 100 V vs. 100 µA @ 100 V) and maintains extended temperature range (−55 to 175°C). These characteristics reduce power dissipation and improve performance in high-temperature environments. Both are active products.

Q4: Are FYP1010DNTU and MBR16100CTG acceptable for new designs?

A: FYP1010DNTU and MBR16100CTG are obsolete or discontinued. They are acceptable only when existing inventory is available and supply continuity is not required. New designs should prioritize active products: MBR10100CT-BP, MBR20100CT-G1, MBR30H100CTG, or MBR41H100CTG.

Q5: Can a 20 A rated device (MBR41H100CTG) be used in place of DSA80C100PB (40 A)?

A: MBR41H100CTG is suitable for applications requiring ≤ 20 A per diode. It maintains 100 V reverse voltage, Schottky technology, common cathode configuration, and TO-220-3 packaging. Current capacity is reduced by 50%. Circuit design must verify that 20 A per diode is sufficient.

Q6: What is the significance of forward voltage (Vf) variation among substitute parts?

A: Forward voltage varies with current rating and manufacturer design. At rated current, Vf ranges from 740 mV (MBR16100CTG @ 8 A) to 950 mV (FYP1010DNTU, MBR20100CT-BP @ 10–20 A). Lower Vf reduces power dissipation. Circuit thermal analysis should account for the specific Vf of the selected substitute.

Q7: Do all substitute parts fit the same PCB footprint as DSA80C100PB?

A: Yes. All substitute parts use TO-220-3 through-hole packaging with identical pin configuration and mechanical dimensions. Direct PCB footprint compatibility is confirmed. No layout modifications are required.

Q8: Which substitute offers the best reverse leakage performance?

A: MBR30H100CTG exhibits the lowest reverse leakage at 4.5 µA @ 100 V, followed by MBR10100CT-G1 and MBR20100CT-G1 at 50 µA @ 100 V. Lower leakage reduces standby power consumption and improves circuit efficiency.

Q9: Is automotive qualification available among substitute parts?

A: Yes. MBR10100CT-G1 and MBR20100CT-G1 carry AEC-Q101 automotive qualification. These parts are suitable for automotive and high-reliability applications requiring formal qualification documentation.

Q10: What is the recommended substitute for applications requiring maximum current capacity below 40 A?

A: MBR41H100CTG (20 A) is the highest-current active substitute. It provides 50% of DSA80C100PB capacity while maintaining all critical electrical and package parameters. For applications requiring 20–40 A, parallel configuration of multiple MBR41H100CTG devices may be considered, subject to circuit design verification.

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