DSA200100L Equivalent & Substitute Parts

Part Overview

The DSA200100L is a PNP bipolar junction transistor manufactured by Panasonic Electronic Components, rated for 50 V collector-emitter breakdown voltage and 100 mA maximum collector current. This surface mount device in MINI3-G3-B packaging is designed for small-signal switching and amplification applications. The part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active product lines that meet the same electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Ic) Maximum	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Vce Saturation (Max)	500 mV @ 10 mA, 100 mA	—
DC Current Gain (hFE) Minimum	210 @ 2 mA, 10 V	—
Power Dissipation Maximum	200	mW
Transition Frequency	150	MHz
Operating Temperature Maximum	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	RoHS Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the DSA200100L is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

Transistor polarity: PNP
Collector-emitter breakdown voltage: 50 V minimum
Collector current rating: 100 mA minimum
Power dissipation: 200 mW minimum
Package compatibility: TO-236-3, SC-59, or SOT-23-3 surface mount
RoHS compliance status
Moisture sensitivity level: 1 (Unlimited)

Acceptable Parameter Variations:

Transition frequency may exceed 150 MHz
DC current gain (hFE) may exceed 210
Vce saturation may be lower than 500 mV
Operating temperature range may be wider than specified
Collector cutoff current may be lower than 100 µA

Substitute parts are grouped into two categories based on package type compatibility: SOT-23-3 variants and SC-59 variants. Parts with lower collector current ratings (150 mA or less) or lower power dissipation (200 mW or less) are included only when all other critical parameters are met or exceeded.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Vce Sat mV	hFE (Min)	Power mW	fT MHz	Package	Status
DSA200100L	Panasonic	100	50	500	210	200	150	TO-236-3	Discontinued
2PB709BRL,215	NXP Semiconductors	200	50	250	210	250	200	TO-236-3	Active
2PB709BSL,215	NXP Semiconductors	200	50	250	210	250	200	TO-236-3	Active
2SA1037AKT146Q	Rohm Semiconductor	150	50	500	120	200	140	TO-236-3	Active
2SA1576U3HZGT106Q	Rohm Semiconductor	150	50	500	120	200	140	SC-70	Active
BC857A-7-F	Diodes Incorporated	100	45	650	125	300	200	TO-236-3	Active
BC857BT116	Rohm Semiconductor	100	45	650	210	350	250	TO-236-3	Not For New Designs
BC857CLT3G	onsemi	100	45	650	420	300	100	TO-236-3	Active
BCX71GE6327HTSA1	Infineon Technologies	100	45	550	120	330	250	TO-236-3	Last Time Buy
BCX71KE6327HTSA1	Infineon Technologies	100	45	550	380	330	250	TO-236-3	Last Time Buy
MSA1162GT1G	onsemi	100	50	500	200	200	80	SC-59	Active

Engineering Selection Recommendations

Primary Substitutes (50 V Rating, Active Status):

The NXP Semiconductors 2PB709BRL,215 and 2PB709BSL,215 provide direct electrical equivalence with enhanced specifications. Both parts maintain the 50 V collector-emitter breakdown voltage, match the 210 hFE minimum at specified conditions, and are available in the same TO-236-3 package. These parts exceed the DSA200100L in collector current capacity (200 mA vs. 100 mA) and power dissipation (250 mW vs. 200 mW), providing design margin. Both are AEC-Q101 qualified and carry active product status.

The onsemi MSA1162GT1G maintains exact electrical equivalence to the DSA200100L across all critical parameters: 50 V rating, 100 mA collector current, 200 mW power dissipation, and 200 hFE minimum. This part is packaged in SC-59 format and carries active product status with ROHS3 compliance.

Secondary Substitutes (50 V Rating, Limited Availability):

The Rohm Semiconductor 2SA1037AKT146Q and 2SA1576U3HZGT106Q both maintain the 50 V collector-emitter breakdown voltage and 200 mW power dissipation. The 2SA1037AKT146Q is available in TO-236-3 packaging with 150 mA collector current capacity. The 2SA1576U3HZGT106Q is packaged in SC-70 (SOT-323) format and carries AEC-Q101 automotive qualification. Both are active products with ROHS3 compliance.

Alternative Substitutes (45 V Rating, Active Status):

The Diodes Incorporated BC857A-7-F, onsemi BC857CLT3G, and Infineon Technologies BCX71GE6327HTSA1 operate at 45 V collector-emitter breakdown voltage, which is 5 V lower than the DSA200100L specification. These parts are suitable for applications where the 50 V rating is not a critical design requirement. All three are available in TO-236-3 packaging with 100 mA collector current ratings and carry active product status.

Not Recommended for New Designs:

The Rohm Semiconductor BC857BT116 and Infineon Technologies BCX71GE6327HTSA1 and BCX71KE6327HTSA1 carry "Not For New Designs" or "Last Time Buy" status and should not be selected for new product development.

Frequently Asked Questions (FAQ)

Q: Can the DSA200100L be replaced with a part rated for 45 V instead of 50 V?

A: Substitution with 45 V rated parts is application-dependent. If the circuit design requires the full 50 V rating for safety margin or compliance with system specifications, 45 V alternatives are not suitable. If the actual operating voltage in the circuit is below 45 V, these parts are electrically compatible.

Q: What is the difference between the 2PB709BRL,215 and 2PB709BSL,215?

A: Both parts are electrically identical NXP Semiconductors 2PB709 transistors in TO-236-3 packaging with 200 mA collector current and 250 mW power dissipation. The difference lies in packaging format: BRL indicates Bulk packaging, while BSL indicates Bulk packaging with different reel specifications. Both are suitable substitutes for the DSA200100L.

Q: Why does the MSA1162GT1G have a lower transition frequency (80 MHz) than the DSA200100L (150 MHz)?

A: The MSA1162GT1G is specified with 80 MHz transition frequency, which is lower than the DSA200100L. This part remains a valid substitute for applications where the transition frequency requirement does not exceed 80 MHz. For high-frequency switching applications requiring 150 MHz or higher performance, the NXP 2PB709 series or Infineon BCX71 series are more appropriate.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed carry ROHS3 compliance status. The DSA200100L is RoHS Compliant. Compliance status is consistent across all recommended alternatives.

Q: What is the significance of the SC-59 package versus TO-236-3?

A: SC-59 and TO-236-3 are equivalent package designations for the same physical form factor. The MSA1162GT1G is specified with SC-59 packaging, which is mechanically and electrically compatible with TO-236-3 footprints. Both packages accommodate the same PCB land patterns and mounting procedures.

Q: Can I use the 2SA1037AKT146Q or 2SA1576U3HZGT106Q as direct replacements?

A: The 2SA1037AKT146Q is a direct replacement in TO-236-3 packaging with 150 mA collector current capacity. The 2SA1576U3HZGT106Q is electrically equivalent but packaged in SC-70 (SOT-323) format, which requires different PCB footprints and is not a direct mechanical replacement without board redesign.

Q: What does AEC-Q101 qualification mean?

A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. Parts carrying this qualification, such as the 2PB709BRL,215 and 2SA1576U3HZGT106Q, have undergone rigorous testing for reliability and performance in automotive applications. This qualification is not required for general industrial or consumer applications.

Q: Why is the BC857CLT3G listed as active when other BC857 variants show different statuses?

A: The BC857CLT3G from onsemi carries active product status, indicating it is currently in production and available for new designs. Other BC857 variants from different manufacturers (such as BC857BT116 from Rohm) may have different lifecycle statuses. Always verify the specific manufacturer and part number when selecting alternatives.

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