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DS135AD Equivalent & Substitute Parts
Part Overview
The DS135AD is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) axial through-hole package. This component is classified as obsolete, making identification of active equivalent parts essential for ongoing design support and procurement continuity. The DS135AD employs standard recovery technology with forward voltage characteristics of 1 V maximum at 1 A forward current.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1 | V @ 1 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | — |
| Current - Reverse Leakage @ Vr | 10 | µA @ 200 V |
| Mounting Type | Through Hole | — |
| Package / Case | DO-204AL, DO-41, Axial | — |
| Operating Temperature - Junction (Max) | 150 | °C |
Substitute Part Grouping Explanation
Substitution of the DS135AD is determined by equivalence across the following critical electrical and mechanical parameters:
- Voltage Rating: Reverse voltage must equal or exceed 200 V DC
- Current Rating: Average rectified current must equal or exceed 1 A
- Forward Voltage: Forward voltage drop at rated current must not exceed 1 V @ 1 A
- Recovery Speed: Standard recovery technology with recovery time >500 ns at >200 mA
- Reverse Leakage: Reverse leakage current at rated voltage
- Package Compatibility: DO-204AL (DO-41) axial through-hole configuration
- Temperature Rating: Junction temperature capability of 150°C or higher
The 1N4003G from Taiwan Semiconductor Corporation meets all substitution criteria as an active, in-production equivalent part.
Parameter Comparison
| Parameter | DS135AD (onsemi) | 1N4003G (Taiwan Semiconductor) | Match Status |
|---|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | Equivalent |
| Current - Average Rectified (Io) | 1 A | 1 A | Equivalent |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A | 1 V @ 1 A | Equivalent |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Equivalent |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V | 5 µA @ 200 V | Superior |
| Mounting Type | Through Hole | Through Hole | Equivalent |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | Equivalent |
| Operating Temperature - Junction (Max) | 150°C | 150°C | Equivalent |
| Product Status | Obsolete | Active | Upgrade |
| RoHS Status | Not specified | ROHS3 Compliant | Improved |
Engineering Selection Recommendations
The 1N4003G is a direct functional equivalent to the DS135AD across all critical electrical parameters. The substitute part offers the following advantages:
Product Status: The 1N4003G maintains active production status, ensuring long-term availability and supply chain continuity. The DS135AD is obsolete and subject to inventory depletion.
Compliance: The 1N4003G is ROHS3 compliant, meeting current environmental and regulatory requirements. Both parts maintain REACH Unaffected status and EAR99 export classification.
Electrical Performance: The 1N4003G demonstrates superior reverse leakage characteristics (5 µA versus 10 µA at 200 V), indicating improved device quality and lower standby current consumption.
Package Compatibility: Both parts utilize identical DO-204AL (DO-41) axial through-hole packaging, permitting direct mechanical and electrical substitution without PCB redesign.
Temperature Rating: Operating temperature specifications are equivalent at 150°C maximum junction temperature.
The 1N4003G is suitable for direct replacement in all applications currently utilizing the DS135AD.
Frequently Asked Questions (FAQ)
Q: Can the 1N4003G be used as a direct replacement for the DS135AD without circuit modification?
A: Yes. The 1N4003G meets or exceeds all electrical specifications of the DS135AD and uses identical DO-204AL (DO-41) axial through-hole packaging. No circuit modifications are required.
Q: What is the significance of the lower reverse leakage current in the 1N4003G?
A: The 1N4003G exhibits 5 µA reverse leakage at 200 V compared to 10 µA for the DS135AD. Lower reverse leakage reduces standby current consumption and improves overall circuit efficiency, particularly in high-impedance applications.
Q: Are there any temperature rating differences between these parts?
A: No. Both the DS135AD and 1N4003G are rated for maximum junction temperatures of 150°C. Operating temperature ranges are equivalent for thermal design purposes.
Q: Why is the DS135AD listed as obsolete?
A: The DS135AD is an older onsemi product that has been discontinued. The 1N4003G from Taiwan Semiconductor Corporation represents the active equivalent in current production.
Q: Does the 1N4003G meet modern regulatory requirements?
A: Yes. The 1N4003G is ROHS3 compliant and maintains REACH Unaffected status, meeting current environmental and export regulations. The DS135AD compliance status is not specified.
Q: Are the forward voltage characteristics identical?
A: Yes. Both parts specify maximum forward voltage of 1 V at 1 A forward current, ensuring equivalent voltage drop performance in rectification circuits.
Q: Can the 1N4003G handle the same current levels as the DS135AD?
A: Yes. Both parts are rated for 1 A average rectified current with identical standard recovery speed characteristics (>500 ns at >200 mA).
Q: Is there any difference in the axial lead configuration?
A: No. Both parts use DO-204AL (DO-41) axial through-hole packaging with identical lead spacing and mechanical dimensions.
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