DS1230Y-150+ NVSRAM Equivalent & Substitute Parts

Part Overview

The DS1230Y-150+ is a Non-Volatile SRAM (NVSRAM) memory integrated circuit manufactured by Analog Devices Inc./Maxim Integrated. This 256Kbit parallel memory device operates at 150 ns access time and is housed in a 28-EDIP package. The product is currently active in production with verified programmability status and full RoHS3 compliance.

Alternative equivalent parts may be required due to inventory constraints, supply chain discontinuities, or application-specific performance requirements. Substitute parts must maintain electrical compatibility across memory capacity, interface type, voltage supply range, and operating temperature specifications.

Key Parameters

Parameter	Value
Memory Type	Non-Volatile SRAM (NVSRAM)
Memory Size	256Kbit
Memory Organization	32K x 8
Memory Interface	Parallel
Access Time	150 ns
Write Cycle Time	150 ns
Voltage Supply Range	4.5V ~ 5.5V
Operating Temperature	0°C ~ 70°C
Package Type	28-DIP Module (0.600", 15.24mm)
Mounting Type	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the DS1230Y-150+ is determined by the following critical parameters:

Primary Compatibility Criteria:

Memory Type: Must be Non-Volatile SRAM (NVSRAM)
Memory Size: Must be 256Kbit
Memory Organization: Must be 32K x 8
Memory Interface: Must be Parallel
Voltage Supply: Must support 4.5V ~ 5.5V range
Operating Temperature: Must support 0°C ~ 70°C minimum
Mounting Type: Must be Through Hole
Package Class: Must be 28-DIP module footprint

Performance Consideration: Access time and write cycle time specifications may vary among substitutes. Parts with equal or faster (lower) timing specifications are functionally compatible with the DS1230Y-150+, as they meet or exceed the original device's performance envelope.

Parameter Comparison

Parameter	DS1230Y-150+	DS1230Y-70+	M48Z35Y-70PC1
Manufacturer	Analog Devices Inc./Maxim Integrated	Analog Devices Inc./Maxim Integrated	STMicroelectronics
Memory Type	NVSRAM	NVSRAM	NVSRAM
Memory Size	256Kbit	256Kbit	256Kbit
Memory Organization	32K x 8	32K x 8	32K x 8
Memory Interface	Parallel	Parallel	Parallel
Access Time	150 ns	70 ns	70 ns
Write Cycle Time	150 ns	70 ns	70 ns
Voltage Supply	4.5V ~ 5.5V	4.5V ~ 5.5V	4.5V ~ 5.5V
Operating Temperature	0°C ~ 70°C	0°C ~ 70°C	0°C ~ 70°C
Package Type	28-EDIP	28-EDIP	28-PCDIP, CAPHAT®
Mounting Type	Through Hole	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active

Engineering Selection Recommendations

DS1230Y-150+ (Primary Part) This part maintains the original 150 ns timing specification and carries verified programmability status. It is the preferred selection when inventory is available and no performance enhancement is required.

DS1230Y-70+ (Direct Substitute) This Analog Devices part provides improved performance with 70 ns access and write cycle times, representing a 2.14x speed improvement over the primary part. Both devices share identical memory capacity, organization, interface, voltage, and temperature specifications. The 28-EDIP package maintains mechanical compatibility. This substitute is suitable for applications requiring faster memory access without design modification.

M48Z35Y-70PC1 (Cross-Manufacturer Substitute) This STMicroelectronics NVSRAM device matches all electrical specifications of the DS1230Y-70+ with 70 ns timing performance. The package variant (28-PCDIP with CAPHAT®) maintains the same 28-DIP footprint and through-hole mounting compatibility. This part is designated as manufacturer-recommended and carries active product status with full RoHS3 compliance. Selection of this part may be appropriate when Analog Devices inventory is unavailable and cross-manufacturer qualification is acceptable.

Frequently Asked Questions (FAQ)

Q: Can DS1230Y-70+ replace DS1230Y-150+ in existing designs? A: Yes. The DS1230Y-70+ is electrically and mechanically compatible. It provides faster access time (70 ns vs. 150 ns) and operates within the same voltage and temperature ranges. No circuit modifications are required.

Q: What is the difference between 28-EDIP and 28-PCDIP packaging? A: Both are 28-pin DIP packages with identical 0.600" (15.24mm) body width and through-hole mounting footprint. The PCDIP variant (M48Z35Y-70PC1) includes CAPHAT® construction. Pin configuration and electrical interface remain compatible for direct substitution.

Q: Are all three parts RoHS3 compliant? A: Yes. DS1230Y-150+, DS1230Y-70+, and M48Z35Y-70PC1 all carry ROHS3 Compliant certification and are REACH Unaffected.

Q: What is the impact of using a faster memory device (70 ns vs. 150 ns)? A: Faster memory devices are backward compatible with designs specified for slower parts. The 70 ns devices will not cause timing violations in circuits designed for 150 ns operation. System performance may improve, but no functional issues will result from the speed upgrade.

Q: Can M48Z35Y-70PC1 be used as a direct pin-for-pin replacement? A: Yes. The M48Z35Y-70PC1 maintains identical pin configuration, voltage supply requirements, and operating temperature range. The 28-DIP footprint is mechanically compatible with existing through-hole PCB layouts.

Q: What certifications apply to all substitute parts? A: All three parts are ROHS3 Compliant, REACH Unaffected, and classified under ECCN EAR99 with HTSUS code 8542.32.0041.

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