DS1220AD-100IND NVSRAM Equivalent & Substitute Parts

Part Overview

The DS1220AD-100IND is a 16Kbit Non-Volatile SRAM (NVSRAM) memory integrated circuit manufactured by Analog Devices Inc./Maxim Integrated. This parallel interface memory device operates with a 100 ns access time and is housed in a 24-EDIP package. The part is currently classified as obsolete, making identification of compatible substitute components essential for system maintenance, repair, and legacy product support.

Key Parameters

Parameter	Value
Memory Type	Non-Volatile SRAM (NVSRAM)
Memory Size	16Kbit
Memory Organization	2K x 8
Memory Interface	Parallel
Access Time	100 ns
Write Cycle Time	100 ns
Supply Voltage	4.5V ~ 5.5V
Operating Temperature	-40°C ~ 85°C
Package Type	24-DIP Module (0.600", 15.24mm)
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the DS1220AD-100IND is determined by strict equivalence across the following critical parameters:

Memory capacity and organization (16Kbit, 2K x 8 configuration)
Memory technology (NVSRAM)
Parallel interface architecture
Electrical performance (100 ns access and write cycle times)
Supply voltage range (4.5V ~ 5.5V)
Operating temperature range (-40°C ~ 85°C)
Physical package (24-EDIP, 24-DIP Module with 0.600" pitch)
Through-hole mounting compatibility

The DS1220AD-100IND+ qualifies as a direct substitute based on identical electrical specifications, memory organization, and package configuration. The primary distinction between these parts is product status and packaging format.

Parameter Comparison

Parameter	DS1220AD-100IND	DS1220AD-100IND+
Memory Type	Non-Volatile SRAM	Non-Volatile SRAM
Memory Size	16Kbit	16Kbit
Memory Organization	2K x 8	2K x 8
Memory Interface	Parallel	Parallel
Access Time	100 ns	100 ns
Write Cycle Time	100 ns	100 ns
Supply Voltage	4.5V ~ 5.5V	4.5V ~ 5.5V
Operating Temperature	-40°C ~ 85°C	-40°C ~ 85°C
Package Type	24-EDIP	24-EDIP
Mounting Type	Through Hole	Through Hole
Product Status	Obsolete	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant
Packaging Format	Standard	Tube

Engineering Selection Recommendations

The DS1220AD-100IND+ is the direct functional equivalent of the DS1220AD-100IND. Selection between these parts should be based on the following criteria:

DS1220AD-100IND+ is the preferred choice for new applications and ongoing production due to its active product status and ROHS3 compliance certification. This part meets current regulatory requirements and benefits from continued manufacturer support.

DS1220AD-100IND remains suitable for legacy system repairs where original component specifications must be maintained and RoHS compliance is not a requirement. Availability is limited due to obsolete status.

Both parts are electrically and mechanically interchangeable within the specified operating parameters. Pin configuration, signal timing, and functional behavior are identical.

Frequently Asked Questions (FAQ)

Q: Can DS1220AD-100IND+ replace DS1220AD-100IND in existing designs?

A: Yes. The DS1220AD-100IND+ is a direct substitute with identical electrical specifications, memory organization, access timing, and package configuration. Both parts operate within the same voltage and temperature ranges and use the same 24-EDIP through-hole package.

Q: What is the difference between DS1220AD-100IND and DS1220AD-100IND+?

A: The primary differences are product status and regulatory compliance. The DS1220AD-100IND is obsolete and RoHS non-compliant. The DS1220AD-100IND+ is active and ROHS3 compliant. Electrical performance and physical packaging are identical.

Q: Are there any pin configuration differences between these parts?

A: No. Both parts use the 24-EDIP package with identical pin assignments and signal definitions. Direct socket substitution is possible without circuit modification.

Q: What supply voltage do these NVSRAM devices require?

A: Both the DS1220AD-100IND and DS1220AD-100IND+ operate with a supply voltage range of 4.5V to 5.5V. System power supply design must maintain voltage within this specification.

Q: What is the memory capacity and organization of these parts?

A: Both devices provide 16Kbit of non-volatile memory organized as 2K x 8 (2048 words of 8 bits each). This organization applies to all parallel interface operations.

Q: Are these parts suitable for high-temperature applications?

A: Both parts are rated for operation across the temperature range of -40°C to 85°C. Applications requiring operation outside this range require alternative components.

Q: What is the access time specification for these NVSRAM devices?

A: Both the DS1220AD-100IND and DS1220AD-100IND+ specify 100 ns access time and 100 ns write cycle time. System timing design must account for these specifications.

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