DS1213B Equivalent & Substitute Parts

Part Overview

The DS1213B is a Smartsocket SRAM memory integrated circuit manufactured by Analog Devices Inc./Maxim Integrated, designed for 16K/64K memory applications in 28-DIP through-hole packaging. The device operates at 4.75V to 5.5V supply voltage with an operating temperature range of 0°C to 70°C. The DS1213B is classified as obsolete, making equivalent substitute parts necessary for ongoing system maintenance, repairs, and legacy equipment support.

Substiute Parts

DS1213B
Analog Devices Inc./Maxim IntegratedIn Stock: 2077DS1213B Datasheet
DS1213B
Current Part
M48Z02-70PC1
STMicroelectronicsIn Stock: 1361M48Z02-70PC1 Datasheet
M48Z02-70PC1
MFR Recommended
M48Z58-70PC1
STMicroelectronicsIn Stock: 3717M48Z58-70PC1 Datasheet
M48Z58-70PC1
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number DS1213B
Manufacturer Analog Devices Inc./Maxim Integrated
Category Memory, Integrated Circuits (ICs)
Controller Type Smartsocket SRAM
Voltage - Supply 4.75V ~ 5.5V
Operating Temperature 0°C ~ 70°C
Mounting Type Through Hole
Package / Case 28-DIP (0.600", 15.24mm)
Product Status Obsolete
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution for the DS1213B is determined by the following critical parameters:

  • Supply Voltage Compatibility: 4.75V ~ 5.5V
  • Operating Temperature Range: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package Configuration: 28-DIP form factor
  • Memory Interface: Parallel access
  • Access Time / Performance: 70 ns specification
  • Moisture Sensitivity: MSL 1 (Unlimited)

The substitute parts identified are STMicroelectronics NVSRAM (Non-Volatile SRAM) devices that meet these electrical and mechanical parameters. These devices provide functional equivalence through matching voltage supply ranges, operating temperature specifications, through-hole mounting, and DIP packaging. The transition from SRAM to NVSRAM technology provides enhanced data retention capabilities while maintaining electrical compatibility with the original DS1213B interface requirements.

Parameter Comparison

Parameter DS1213B M48Z02-70PC1 M48Z58-70PC1
Manufacturer Analog Devices Inc./Maxim Integrated STMicroelectronics STMicroelectronics
Memory Type Smartsocket SRAM Non-Volatile SRAM (NVSRAM) Non-Volatile SRAM (NVSRAM)
Memory Size 16K/64K 16Kbit 64Kbit
Memory Organization - 2K x 8 8K x 8
Memory Interface Parallel Parallel Parallel
Access Time - 70 ns 70 ns
Voltage - Supply 4.75V ~ 5.5V 4.75V ~ 5.5V 4.75V ~ 5.5V
Operating Temperature 0°C ~ 70°C 0°C ~ 70°C 0°C ~ 70°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case 28-DIP (0.600", 15.24mm) 24-DIP Module (0.600", 15.24mm) 28-DIP Module (0.600", 15.24mm)
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

M48Z58-70PC1 is the primary substitute for DS1213B applications. This device matches the 28-DIP package configuration exactly, eliminating PCB layout modifications. The M48Z58-70PC1 provides 64Kbit capacity with 8K x 8 organization, supporting both 16K and 64K memory configurations through selective address line utilization. Electrical parameters—supply voltage (4.75V ~ 5.5V), operating temperature (0°C ~ 70°C), access time (70 ns), and parallel interface—are fully compatible with DS1213B requirements. The device is in active production status with ROHS3 compliance, providing long-term availability and regulatory alignment for new designs and legacy system updates.

M48Z02-70PC1 serves as an alternative for 16Kbit-only applications. This device operates identically to M48Z58-70PC1 in electrical specifications but is packaged in 24-DIP configuration. Selection of M48Z02-70PC1 requires PCB modification to accommodate the reduced pin count and different package footprint. This option is suitable only when 16Kbit capacity is sufficient and PCB redesign is feasible.

Both substitute parts transition from SRAM to NVSRAM technology, providing non-volatile data retention without external battery backup, a functional enhancement over the original DS1213B design.

Frequently Asked Questions (FAQ)

Q: Can M48Z02-70PC1 directly replace DS1213B without PCB modification?

A: No. M48Z02-70PC1 uses 24-DIP packaging while DS1213B uses 28-DIP packaging. Pin count and footprint differences require PCB layout changes. M48Z58-70PC1 is the direct pin-compatible substitute.

Q: What is the key difference between M48Z02-70PC1 and M48Z58-70PC1?

A: Memory capacity and package size. M48Z02-70PC1 provides 16Kbit in 24-DIP; M48Z58-70PC1 provides 64Kbit in 28-DIP. Both share identical electrical specifications (voltage, temperature, access time, interface type).

Q: Are the substitute parts electrically compatible with DS1213B?

A: Yes. Both M48Z02-70PC1 and M48Z58-70PC1 operate at 4.75V ~ 5.5V supply voltage, 0°C ~ 70°C temperature range, with 70 ns access time and parallel interface, matching DS1213B electrical requirements.

Q: Why transition from SRAM to NVSRAM?

A: NVSRAM technology provides non-volatile data retention, eliminating the need for external battery backup systems required by traditional SRAM. This reduces system complexity and improves reliability in legacy equipment retrofits.

Q: What is the MSL rating for substitute parts?

A: Both M48Z02-70PC1 and M48Z58-70PC1 carry MSL 1 (Unlimited) rating, identical to DS1213B, indicating no moisture sensitivity constraints during storage or handling.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both M48Z02-70PC1 and M48Z58-70PC1 are ROHS3 compliant, meeting current environmental and regulatory standards. DS1213B is RoHS non-compliant due to its obsolete status.

Q: Can M48Z58-70PC1 support both 16K and 64K memory configurations?

A: Yes. M48Z58-70PC1 provides 64Kbit capacity (8K x 8 organization). Systems requiring only 16Kbit operation can utilize this device with address line configuration adjustments; the full 64Kbit capacity remains available for applications requiring expanded memory.

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